CATEGORY 3 - ELECTRONICS
                                
                  A.  SYSTEMS, EQUIPMENT AND 
                           COMPONENTS
                                
     Note 1:  The control status of equipment and
components described in 3A001 or 3A002, other
than those described in 3A001.a.3 to 3A001.a.10
or 3A001.a.12, which are specially designed for
or which have the same functional characteristics
as other equipment is determined by the control
status of the other equipment. 

     Note 2:  The control status of integrated
circuits described in 3A001.a.3 to 3A001.a.9 or
3A001.a.12 that are unalterably programmed or
designed for a specific function for other
equipment is determined by the control status of
the other equipment.

     N.B.:  When the manufacturer or applicant
cannot determine the control status of the other
equipment, the control status of the integrated
circuits is determined in 3A001.a.3 to 3A001.a.9
and 3A001.a.12.


3A001  Electronic components and specially
designed components therefor, as follows (see
List of Items Controlled).

License Requirements

     Reason for Control: NS, MT, NP, AT

Control(s)                              Country Chart

NS applies to entire entry         NS Column 2

MT applies to 3A001.a.1.a          MT Column 1
when usable in "missiles";          
and to 3A001.a.5.a when   
"designed or modified" for 
military use, hermetically 
sealed and rated for operation 
in the temperature range from 
below -54§C to above +125§C.

NP applies to pulse discharge NP Column 1
capacitors in 3A001.e.2
and superconducting
solenoidal electromagnets
in 3A001.e.3 that meet or
exceed the technical parameters
in 3A201.a and 3A201.b,
respectively

AT applies to entire entry         AT Column 1

License Exceptions

     LVS:     N/A for MT or NP
               Yes for:
               $1500: 3A001.c
               $3000: 3A001.b.1, b.2, b.3, b.9, .d, .e,
               .f, and .g 
               $5000: 3A001.a (except a.1.a and
               a.5.a when controlled for MT), and
               .b.4 to b.7     
     GBS: Yes for 3A001.a.1.b, a..2 to a.12
          (except .a..5.a when controlled for
          MT), b.2,  b.8 (except for TWTAs
          exceeding 18 GHz), b.9., b.10, .g, and
          .h.
.    CIV: Yes for 3A001.a.3, a.4, a.7, and a.11.
     
List of Items Controlled

     Unit:     Number.
     Related Controls: 1.)  The following 
     commodities are under the export licensing
     authority of the Department of State,
     Directorate of Defense Trade Controls (22
     CFR part 121) when "space qualified" and
     operating at frequencies higher than 31.8
     GHz:  helix tubes (traveling wave tubes
     (TWT)) defined in 3A001.b.1.a.4.c; 
     microwave solid state amplifiers defined in
     3A001.b.4.b traveling wave tube amplifiers
     (TWTA) defined in 3A001.b.8; and
     derivatives thereof;  2.)  The following 
     commodities are also under the export
     licensing authority of the Department of State,
     Directorate of Defense Trade Controls (22
     CFR part 121): (a) "Space qualified"    solar
     cells, coverglass-interconnect-cells or
     covered-interconnect-cells (CIC) assemblies,
     solar arrays and/or solar panels, with a
     minimum average efficiency of 31% or
     greater measured at an operating temperature
     of 301 K (28§C) under simulated 'AM0'  
     illumination with an irradiance of 1,367 Watts
     per square meter (W/m2), and associated solar
     concentrators, power conditioners and/or
     controllers, bearing and power transfer
     assemblies, and deployment
     hardware/systems; (b) Radiation-hardened
     microelectronic circuits controlled by
     Category XV (d) of the United States
     Munitions List (USML); and (c) All
     specifically designed or modified systems or
     subsystems, components, parts, accessories,
     attachments, and associated equipment
     controlled by Category XV (e) of the USML. 
      See also 3A101, 3A201, and 3A991.
     Related Definitions: For the purposes of
     integrated circuits in 3A001.a.1, 5 x 103
     Gy(Si) = 5 x 105 Rads (Si); 5 x 106 Gy (Si)/s
     = 5 x 108 Rads (Si)/s. 
     Items:

a.   General purpose integrated circuits, as
follows:

     Note 1:  The control status of wafers (finished
or unfinished), in which the function has been
determined, is to be evaluated against the
parameters of 3A001.a.

     Note 2:  Integrated circuits include the
following types:

     -   Monolithic integrated circuits
     -   Hybrid integrated circuits
     -   Multichip integrated circuits
     -   Film type integrated circuits, including
           silicon-on-sapphire integrated circuits
     -   Optical integrated circuits

     a.1.   Integrated circuits designed or rated as
radiation hardened to withstand any of the
following:

          a.1.a.  A total dose of 5 x 103 Gy (Si), or
higher;

          a.1.b.  A dose rate upset of 5 x 106 Gy
(Si)/s, or higher; or
     
          a.1.c.  A fluence (integrated flux) of
neutrons (1 MeV equivalent) of 5 x 1013 n/cmý or
higher on silicon, or its equivalent for other
materials;

          Note:  3A001.a.1.c does not apply to
Metal Insulator Semiconductors (MIS).

     a.2. "Microprocessor microcircuits",
"microcomputer microcircuits", microcontroller
microcircuits, storage integrated circuits
manufactured from a compound semiconductor,
analog-to-digital converters, digital-to-analog
converters, electro-optical or "optical integrated
circuits" designed for "signal processing", field
programmable logic devices, custom integrated
circuits for which either the function is unknown
or the control status of the equipment in which the
integrated circuit will be used in unknown, Fast
Fourier Transform (FFT) processors, electrical
erasable programmable read-only memories
(EEPROMs), flash memories or static
random-access memories (SRAMs), having any of
the following:

          a.2.a.  Rated for operation at an ambient
temperature above 398 K (125øC);

          a.2.b.  Rated for operation at an ambient
temperature below 218 K (-55øC); or

          a.2.c.  Rated for operation over the entire
ambient temperature range from 218 K (-55ø C) to
398 K (125ø C);

     Note:  3A001.a.2 does not apply to integrated
circuits for civil automobile or railway train
applications.

     a.3.  "Microprocessor microcircuits",
"microcomputer microcircuits" and
microcontroller microcircuits, manufactured from
a compound semiconductor and operating at a
clock frequency exceeding 40 MHz; 

     Note:  3A001.a.3 includes digital signal
processors, digital array processors and digital
coprocessors.

     a.4.  Storage integrated circuits manufactured
from a compound semiconductor;

     a.5.  Analog-to-digital and digital-to-analog
converter integrated circuits, as follows:

          a.5.a.  Analog-to-digital converters having
any of the following:

               a.5.a.1.     A resolution of 8 bit or more,
but less than 10 bit, with an output rate greater
than 500 million words per second;

               a.5.a..2  A resolution of 10 bit or
more, but less than 12 bit, with an output rate
greater than 200 million words per second;

               a.5.a.3.  A resolution of 12 bit with an
output rate greater than 105 million words per
second;

               a.5.a.4.  A resolution of more than 12
bit but equal to or less than 14 bit with an output
rate greater than 10 million words per second; or

               a.5.a.5.  A resolution of more than 14
bit with an output rate greater than 2.5 million
words per second;

          a.5.b.  Digital-to-analog converters with a
resolution of 12 bit or more and a "settling time"
of less than 10 ns;

     Technical Notes:

           1.  A resolution of n bit corresponds to a
quantization of 2n levels. 

           2.  The number of bits in the output word
is equal to the resolution of the
analogue-to-digital converter.

          3.     The output rate is the maximum
output rate of the converter, regardless of
architecture or oversampling.  Vendors may also
refer to the output rate as sampling rate,
conversion rate or throughput rate.  It is often
specified in megahertz (MHz) or mega samples
per second (MSPS).

          4.     For the purpose of measuring output
rate, one output word per second is equivalent to
one Hertz or one sample per second.

     a.6.  Electro-optical and "optical integrated
circuits", designed for "signal processing" and
having all of the following:

          a.6.a.  One or more than one internal
"laser" diode;

          a.6.b.  One or more than one internal light
detecting element; and

          a.6.c.  Optical waveguides;

     a.7.  'Field programmable logic devices'
having any of the following:

          a.7.a. A maximum number of digital
input/outputs greater than 200; or

          a.7.b.  A system gate count of greater than
230,000;

          Note: 3A001.a.7 includes: 

          -    Simple Programmable Logic Devices
               (SPLDs)
          -    Complex Programmable Logic
               Devices (CPLDs) 
          
          -    Field Programmable Gate Arrays
               (FPGAs) 
               
          -    Field Programmable Logic Arrays
               (FPLAs)  

          -    Field Programmable Interconnects
               (FPICs)

          Technical Notes:

          1.  'Field  programmable logic devices'
are also known as field programmable gate or
field programmable logic arrays.

          2.     Maximum number of digital
input/outputs in 3A001.a.7.a is also referred to as
maximum user input/outputs or maximum
available input/ outputs, whether the integrated
circuit is packaged or bare die.
 
     a.8. [RESERVED]

     a.9.  Neural network integrated circuits;

     a.10.  Custom integrated circuits for which the
function is unknown, or the control status of the
equipment in which the integrated circuits will be
used is unknown to the manufacturer, having any
of the following:

          a.10.a.  More than 1,500 terminals;

          a.10.b.  A typical "basic gate propagation
delay time" of less than 0.02 ns; or 

          a.10.c.  An operating frequency exceeding
3 GHz;

     a.11.  Digital integrated circuits, other than
those described in 3A001.a.3 to 3A001.a.10 and
3A001.a.12, based upon any compound
semiconductor and having any of the following:

          a.11.a.  An equivalent gate count of more
than 3,000 (2 input gates); or

          a.11.b.  A toggle frequency exceeding 1.2
GHz;

     a.12. Fast Fourier Transform (FFT) processors
having a rated execution time for an N-point
complex FFT of less than (N log2 N)/20,480 ms,
where N is the number of points; 

          Technical Note:  When N is equal to
1,024 points, the formula in 3A001.a.12 gives an
execution time of 500  s.

b.   Microwave or millimeter wave components, as
follows:

     b.1.  Electronic vacuum tubes and cathodes, as
follows:

     Note 1:  3A001.b.1 does not control tubes
designed or rated for operation in any frequency
band and having all of the following: 

          a. Does not exceed 31.8 GHz; and 

          b. Is "allocated by the ITU" for
radio-communications services, but not for
radio-determination. 

     Note 2: 3A001.b.1 does not control
non-"space-qualified" tubes having all the
following:

          a)  An average output power equal to or
less than 50 W; and

          b)  Designed or rated for operation in any
frequency band  and having all of the following:

               1)  Exceeds 31.8 GHz but does not
exceed 43.5 GHz; and

               2)  Is "allocated by the ITU" for
radio-communications services, but not for
radio-determination.
     
          b.1.a.  Traveling wave tubes, pulsed or
continuous wave, as follows:

               b.1.a.1.  Tubes operating at
frequencies exceeding 31.8 GHz;

               b.1.a.2.  Tubes having a cathode
heater element with a turn on time to rated RF
power of less than 3 seconds;

               b.1.a.3.  Coupled cavity tubes, or
derivatives thereof, with a "fractional bandwidth"
of more than 7% or a peak power exceeding 2.5
kW;

               b.1.a.4.   Helix tubes, or derivatives
thereof, having any of the following:

                    b.1.a.4.a.  An "instantaneous
bandwidth" of more than one octave, and average
power (expressed in kW) times frequency
(expressed in GHz) of more than 0.5;

                    b.1.a.4.b.  An "instantaneous
bandwidth" of one octave or less, and average
power (expressed in kW) times frequency
(expressed in GHz) of more than 1; or

                    b.1.a.4.c. Being "space qualified";

          b.1.b.  Crossed-field amplifier tubes with
a gain of more than 17 dB;

          b.1.c.  Impregnated cathodes designed for
electronic tubes producing a continuous emission
current density at rated operating conditions
exceeding 5 A/cm2;

     b.2. Microwave "Monolithic Integrated
Circuits" (MMIC) power amplifiers having any of
the following:

          b.2.a.     Rated for operation at frequencies
exceeding 3.2 GHz up to and including 6 GHz and
with an average output power greater than 4W (36
dBm) with a "fractional bandwidth" greater than
15%;

          b.2.b.     Rated for operation at frequencies
exceeding 6 GHz up to and including 16 GHz and
with an average output power greater than 1W (30
dBm) with a "fractional bandwidth" greater than
10%;

          b.2.c.     Rated for operation at frequencies
exceeding 16 GHz up to and including 31.8 GHz
and with an average output power greater than
0.8W (29 dBm) with a "fractional bandwidth"
greater than 10%;

          b.2.d.     Rated for operation at frequencies
exceeding 31.8 GHz up to and including 37.5
GHz;

          b.2.e.     Rated for operation at frequencies
exceeding 37.5 GHz up to and including 43.5 GHz
and with an average output power greater than
0.25W (24 dBm) with a "fractional bandwidth"
greater than 10%; or

          b.2.f.     Rated for operation at frequencies
exceeding 43.5 GHz.

     Note 1: 3A001.b.2 does not control broadcast
satellite equipment designed or rated to operate in
the frequency range of 40.5 to 42.5 GHz.

     Note 2:  The control status of the MMIC
whose rated operating frequency includes
frequencies listed in more than one frequency
range, as defined by 3A001.b.2.a through
3A001.b.2.f, is determined by the lowest average
output power control threshold.

     Note 3:  Notes 1 and 2 following the Category
3 heading for A. Systems, Equipment, and
Components mean that 3A001.b.2. does not
control MMICs if they are specially designed for
other applications, e.g., telecommunications,
radar, automobiles.

     b.3. Discrete microwave transistors having
any of the following:

          b.3.a.     Rated for operation at frequencies
exceeding 3.2 GHz up to and including 6 GHz and
having an average output power greater than 60W
(47.8 dBm);

          b.3.b.     Rated for operation at frequencies
exceeding 6 GHz up to and including 31.8 GHz
and having an average output power greater than
20W (43 dBm);

          b.3.c.     Rated for operation at frequencies
exceeding 31.8 GHz up to and including 37.5 GHz
and having an average output power greater than
0.5W (27 dBm);

          b.3.d.     Rated for operation at frequencies
exceeding 37.5 GHz up to and including 43.5 GHz
and having an average output power greater than
1W (30 dBm); or

          b.3.e.     Rated for operation at frequencies
exceeding 43.5 GHz;

     Note:     The control status of a transistor
whose rated operating frequency includes
frequencies listed in more than one frequency
range, as defined by 3A001.b.3.a through
3A001.b.3.e, is determined by the lowest average
output power control threshold.

     b.4.  Microwave solid state amplifiers and
microwave assemblies/modules containing
microwave solid state amplifiers, having any of
the following:

          b.4.a.     Rated for operation at frequencies
exceeding 3.2 GHz up to and including 6 GHz and
with an average output power greater than 60W
(47.8 dBm) with a "fractional bandwidth" greater
than 15%;

          b.4.b.     Rated for operation at frequencies
exceeding 6 GHz up to and including 31.8 GHz
and with an average output power greater than
15W (42 dBm) with a "fractional bandwidth"
greater than 10%;

          b.4.c.     Rated for operation at frequencies
exceeding 31.8 GHz up to and including 37.5
GHz;

          b.4.d.     Rated for operation at frequencies
exceeding 37.5 GHz up to and including 43.5 GHz
and with an average output power greater than 1W
(30 dBm) with a "fractional bandwidth" greater
than 10%; 

          b.4.e.     Rated for operation at frequencies
exceeding 43.5 GHz; or

          b.4.f.     Rated for operation at frequencies
above 3.2 GHz and all of the following:

               b.4.f.1.     An average output power (in
watts), P, greater than 150 divided by the
maximum operating frequency (in GHz) squared
[P > 150 W*GHz2/fGHz2];

               b.4.f.2.     A "fractional bandwidth" of
5% or greater; and

               b.4.f.3.     Any two sides perpendicular
to one another with length d (in cm) equal to or
less than 15 divided by the lowest operating
frequency in GHz [d ó 15 cm*GHz/ fGHz];

     Technical Note: 3.2 GHz should be used as
the lowest operating frequency (fGHz) in the
formula in 3A001.b.4.f.3., for amplifiers that have
a rated operation range extending downward to
3.2 GHz and below [dó15cm*GHz/3.2 fGHz].

     N.B.:     MMIC power amplifiers should be
evaluated against the criteria in 3A001.b.2.

     Note 1:  3A001.b.4. does not control
broadcast satellite equipment designed or rated to
operate in the frequency range of 40.5 to 42.5
GHz.

     Note 2:  The control status of an item whose
rated operating frequency includes frequencies
listed in more than one frequency range, as
defined by 3A001.b.4.a through 3A001.b.4.e, is
determined by the lowest average output power
control threshold.
                    
     b.5.  Electronically or magnetically tunable
band-pass or band-stop filters, having more than
5 tunable resonators capable of tuning across a
1.5:1 frequency band (fmax/fmin) in less than 10  s
and having any of the following:

          b.5.a.  A band-pass bandwidth of more
than 0.5% of center frequency; or

          b.5.b.  A band-stop bandwidth of less than
0.5% of center frequency;

     b.6.  [RESERVED]

     b.7.  Converters and harmonic mixers,
designed to extend the frequency range of
equipment described in 3A002.c, 3A002.d,
3A002.e or 3A002.f beyond the limits stated
therein;

     b.8.  Microwave power amplifiers containing
tubes controlled by 3A001.b.1 and having all of
the following:

          b.8.a.  Operating frequencies above 3
GHz;

          b.8.b.  An average output power to mass
ratio exceeding 80 W/kg; and

          b.8.c.  A volume of less than 400 cm3;

     Note:  3A001.b.8 does not control equipment
designed or rated for operation in any frequency
band which is "allocated by the ITU" for
radio-communications services, but not for
radio-determination.

     b.9. Microwave power modules (MPM),
consisting of, at least, a traveling wave tube, a
microwave "monolithic integrated circuit" and an
integrated electronic power conditioner and
having all of the following:

          b.9.a.  A 'turn-on time' from off to fully
operational in less than 10 seconds; 

          b.9.b.  A volume less than the maximum
rated power in Watts multiplied by 10 cm3/W; and
 
          b.9.c.  An "instantaneous bandwidth"
greater than 1 octave (fmax. > 2fmin,) and having any
of the following:

               b.9.c.1.  For frequencies equal to or
less than 18 GHz, an RF output power greater
than 100 W; or

               b.9.c.2. A frequency greater than 18
Ghz;

     Technical Notes:

     1.     To calculate the volume in 3A001.b.9.b.,
the following example is provided: for a maximum
rated power of 20 W, the volume would be: 20 W
X 10 cm3/W = 200 cm3.
                      
     2. The 'turn-on time' in 3A001.b.9.a. refers to
the time from fully-off to fully operational, i.e., it
includes the warm-up time of the MPM.

     b.10.     Oscillators or oscillator assemblies,
designed to operate with all of the following:

          b.10.a.     A single sideband (SSB) phase
noise, in dBc/Hz, better than -(126+20 log10F-20
log10f) for 10 Hz <F<10 kHz; and

          b.10.b.     A single sideband (SSB) phase
noise, in dBc/Hz, better than -(114+20 log10F-20
log10f) for 10 kHz = F < 500 kHz;

     Technical Note:  In 3A001.b.10., F is the
offset from the operating frequency in Hz and f is
the operating frequency in MHz.     
                    
c.  Acoustic wave devices as follows and specially
designed components therefor:

     c.1.  Surface acoustic wave and surface
skimming (shallow bulk) acoustic wave devices ,
having any of the following:

          c.1.a.  A carrier frequency exceeding 6
GHz;

          c.1.b.  A carrier frequency exceeding 1
GHz, but not exceeding 6 GHz and having any of
the following:

               c.1.b.1.  A 'frequency side-lobe
rejection' exceeding 65 dB;

               c.1.b.2.  A product of the maximum
delay time and the bandwidth (time in  s and
bandwidth in MHz) of more than 100;

               c.1.b.3.  A bandwidth greater than 250
MHz; or

               c.1.b.4.  A dispersive delay of more
than 10  s; or

          c.1.c.  A carrier frequency of 1 GHz or
less and having any of the following:

               c.1.c.1.  A product of the maximum
delay time and the bandwidth (time in  s and
bandwidth in MHz) of more than 100;

               c.1.c.2.  A dispersive delay of more
than 10  s; or

               c.1.c.3.  A 'frequency side-lobe
rejection' exceeding 65 dB and a bandwidth
greater than 100 MHz;

     Technical Note: 'Frequency side-lobe
rejection' is the maximum rejection value
specified in data sheet.

     c.2.  Bulk (volume) acoustic wave devices 
that permit the direct processing of signals at
frequencies exceeding 6 GHz;

     c.3.  Acoustic-optic "signal processing"
devices employing interaction between acoustic
waves (bulk wave or surface wave) and light
waves that permit the direct processing of signals
or images, including spectral analysis, correlation
or convolution;

Note:  3A001.c does not control acoustic wave
devices that are limited to a single band pass, low
pass, high pass or notch filtering, or resonating
function.

d.   Electronic devices and circuits containing
components, manufactured from
"superconductive" materials, specially designed
for operation at temperatures below the "critical
temperature" of at least one of the
"superconductive" constituents and having any of
the following:

     d.1.  Current switching for digital circuits
using "superconductive" gates with a product of
delay time per gate (in seconds) and power
dissipation per gate (in watts) of less than 10-14 J;
or

     d.2.  Frequency selection at all frequencies
using resonant circuits with Q-values exceeding
10,000;

e.  High energy devices as follows:

     e.1.  'Cells' as follows:
                                                       
          e.1.a.  'Primary cells' having an 'energy
density' exceeding 550 Wh/kg at 293 K (20§C);

          e.1.b.  'Secondary cells' having an
'energy density' exceeding 250 Wh/kg at 293 K
(20§C);

     
     Technical Notes:  

     1.     For the purpose of 3A001.e.1., 'energy
density' (Wh/kg) is calculated from the nominal
voltage multiplied by the nominal capacity in
ampere-hours (Ah) divided by the mass in
kilograms. If the nominal capacity is not stated,
energy density is calculated from the nominal
voltage squared then multiplied by the discharge
duration in hours divided by the discharge load in
Ohms and the mass in kilograms.

     2.     For the purpose of 3A001.e.1., a 'cell' is
defined as an electrochemical device, which has
positive and negative electrodes, an electrolyte,
and is a source of electrical energy.  It is the basic
building block of a battery.

     3.     For the purpose of 3A001.e.1.a., a
'primary cell' is a 'cell' that is not designed to be
charged by any other source.

     4.     For the purpose of 3A001.e.1.b., a
'secondary cell' is a 'cell' that is designed to be
charged by an external electrical source.

Note:     3A001.e. does not control batteries,
including single-cell batteries.
          
     e.2.  High energy storage capacitors as
follows:

          e.2.a.  Capacitors with a repetition rate of
less than 10 Hz (single shot capacitors) and
having all of the following:

               e.2.a.1.  A voltage rating equal to or
more than 5 kV;

               e.2.a.2.  An energy density equal to or
more than 250 J/kg; and

               e.2.a.3.  A total energy equal to or
more than 25 kJ;

          e.2.b.   Capacitors with a repetition rate of
10 Hz or more (repetition rated capacitors) and
having all of the following:

               e.2.b.1.  A voltage rating equal to or
more than 5 kV;

               e.2.b.2.  An energy density equal to or
more than 50 J/kg;

               e.2.b.3.  A total energy equal to or
more than 100 J; and

               e.2.b.4.  A charge/discharge cycle life
equal to or more than 10,000;

     e.3.  "Superconductive" electromagnets and
solenoids, specially designed to be fully charged
or discharged in less than one second and having
all of the following:

     Note:  3A001.e.3 does not control
"superconductive" electromagnets or solenoids
specially designed for Magnetic Resonance
Imaging (MRI) medical equipment.

          e.3.a.  Energy delivered during the
discharge exceeding 10 kJ in the first second;

          e.3.b.  Inner diameter of the current
carrying windings of more than 250 mm; and

          e.3.c.  Rated for a magnetic induction of
more than 8 T or "overall current density" in the
winding of more than 300 A/mm2;

      e.4. Solar cells, cell-interconnect-coverglass
(CIC) assemblies, solar panels, and solar arrays,
which are "space qualified," having a minimum
average efficiency exceeding 20% at an operating
temperature of 301 K (28§C) under simulated
'AM0' illumination with an irradiance of 1,367
Watts per square meter (W/m2);

     Technical Note: 'AM0', or 'Air Mass Zero',
refers to the spectral irradiance of sun light in the
earth's outer atmosphere when the distance
between the earth and sun is one astronomical
unit (AU).

f.      Rotary input type absolute position encoders
having an accuracy equal to or less (better) than ñ
1.0 second of arc;

g.     Solid-state pulsed power switching thyristor
devices and 'thyristor modules', using either
electrically, optically, or electron radiation
controlled switch methods and having any of the
following:

     g.1.     A maximum turn-on current rate of
rise (di/dt) greater than 30,000 A/ s and off-state
voltage greater than 1,100 V; or

     g.2.     A maximum turn-on current rate of
rise (di/dt) greater than 2,000 A/ s and having all
of the following:

          g.2.a.     An off-state peak voltage equal to
or greater than 3,000 V; and 

          g.2.b.     A peak (surge) current equal to or
greater than 3,000 A;

     Note 1:  3A001.g. includes:

     -     Silicon Controlled Rectifiers (SCRs)

     -     Electrical Triggering Thyristors (ETTs)

     -     Light Triggering Thyristors (LTTs)

       -     Integrated Gate Commutated Thyristors
          (IGCTs)
                    
     -     Gate Turn-off Thyristors (GTOs)

     -     MOS Controlled Thyristors (MCTs)

     -     Solidtrons

Note 2:     3A001.g. does not control thyristor
devices and 'thyristor modules' incorporated into
equipment designed for civil railway or "civil
aircraft" applications.

h. Solid-state power semiconductor switches,
diodes, or 'modules', having all of the following:

     h.1.     Rated for a maximum operating
junction temperature greater than 488 K (215øC);

     h.2.     Repetitive peak off-state voltage
(blocking voltage) exceeding 300 V; and

     h.3.     Continuous current greater than 1 A.

     Technical Note:      For the purposes of
3A001.h, 'modules' contain one or more
solid-state power semiconductor switches or
diodes.
                    
     Note 1: Repetitive peak off-state voltage in
3A001.h includes drain to source voltage,
collector to emitter voltage, repetitive peak
reverse voltage and peak repetitive off-state
blocking voltage.

     Note 2: 3A001.h. includes:

     -     Junction Field Effect Transistors (JFETs)

       -     Vertical Junction Field Effect Transistors
          (VJFETs)

       -     Metal Oxide Semiconductor Field Effect
          Transistors (MOSFETs)

       -     Double Diffused Metal Oxide
          Semiconductor Field Effect Transistor
          (DMOSFET)

     -     Insulated Gate Bipolar Transistor (IGBT)

       -     High Electron Mobility Transistors
          (HEMTs)

     -     Bipolar Junction Transistors (BJTs)

       -     Thyristors and Silicon Controlled
          Rectifiers (SCRs)

     -     Gate Turn-Off Thyristors (GTOs)

     -     Emitter Turn-Off Thyristors (ETOs)
     
     -     PiN Diodes

     -     Schottky Diodes

          Note 3: 3A001.h. does not apply to
switches, diodes, or 'modules' incorporated into
equipment designed for civil automobile, civil
railway, or "civil aircraft" applications.


3A002  General purpose electronic equipment
and accessories therefor, as follows (see List of
Items Controlled).

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

     License Requirement Notes:  See 743.1 of
the EAR for reporting requirements for exports
under License Exceptions.

License Exceptions  

     LVS:     $3000: 3A002.a, .e, .f, .g;
               $5000: 3A002.b to .d
     GBS: Yes for 3A002.a.1.; and 3A002.b
          (synthesized output frequency of 2.6
          GHz or less and a "frequency
          switching time" of 0.3 ms or more).
     CIV: Yes for 3A002.a.1 (provided all of
          the following conditions are met: 1)
          Bandwidths do not exceed: 4 MHz
          per track and have up to 28 tracks or
          2 MHz per track and have up to 42
          tracks; 2) Tape speed does not exceed
          6.1 m/s; 3) They are not designed for
          underwater use; 4) They are not
          ruggedized for military use; and 5)
          Recording density does not exceed
          653.2 magnetic flux sine waves per
          mm); and 3A002.b (synthesized
          output frequency of 2.6 GHz or less;
          and a "frequency switching time" of
          0.3 ms or more).

List of Items Controlled

     Unit: Number
     Related Controls:  "Space qualified" atomic
     frequency standards defined in 3A002.g.1 are
     subject to the export licensing authority of the
     Department of State, Directorate of Defense
     Trade Controls (22 CFR part 121.1, Category
     XV).   See also 3A292 and 3A992.
     Related Definitions: Constant percentage
     bandwidth filters are also known as octave or
     fractional octave filters.
     Items:

a. Recording equipment as follows and specially
designed test tape therefor:

     a.1. Analog instrumentation magnetic tape
recorders, including those permitting the
recording of digital signals (e.g., using a high
density digital recording (HDDR) module), having
any of the following:

          a.1.a. A bandwidth exceeding 4 MHz per
electronic channel or track;

          a.1.b.  A bandwidth exceeding 2 MHz per
electronic channel or track and having more than
42 tracks; or

          a.1.c. A time displacement (base) error,
measured in accordance with applicable IRIG or
EIA documents, of less than ñ 0.1  s;

          Note: Analog magnetic tape recorders
specially designed for civilian video purposes are
not considered to be instrumentation tape
recorders.

     a.2. Digital video magnetic tape recorders
having a maximum digital interface transfer rate
exceeding 360 Mbit/s;

     Note: 3A002.a.2 does not control digital
video magnetic tape recorders specially designed
for television recording using a signal format,
which may include a compressed signal format,
standardized or recommended by the ITU, the
IEC, the SMPTE, the EBU , the ETSI, or the IEEE
for civil television applications.

     a.3. Digital instrumentation magnetic tape
data recorders employing helical scan techniques
or fixed head techniques and having any of the
following:

          a.3.a.  A maximum digital interface
transfer rate exceeding 175 Mbit/s; or

          a.3.b.  Being "space qualified";

     Note: 3A002.a.3 does not control analog
magnetic tape recorders equipped with HDDR
conversion electronics and configured to record
only digital data.

     a.4. Equipment having a maximum digital
interface transfer rate exceeding 175 Mbit/s and
designed to convert digital video magnetic tape
recorders for use as digital instrumentation data
recorders;

     a.5. Waveform digitizers and transient
recorders, having all of the following:

     N.B.:  See also 3A292.

          a.5.a.  Digitizing rates equal to or more
than 200 million samples per second and a
resolution of 10 bits or more; and

          a.5.b.  A 'continuous throughput' of 2
Gbit/s or more;

     Technical Notes:  

     1.   For those instruments with a parallel bus
          architecture, the 'continuous' throughput
          rate is the highest word rate multiplied by
          the number of bits in a word.  

     2.   'Continuous throughput' is the fastest
          data rate the instrument can output to
          mass storage without the loss of any
          information while sustaining the
          sampling rate and analog-to-digital
          conversion.

     a.6. Digital instrumentation data recorders
using magnetic disk storage technique and having
all of the following:

          a.6.a. Digitizing rate equal to or more than
100 million samples per second and a resolution
of 8 bits or more; and
          
          a.6.b.  A 'continuous throughput' of 1
Gbit/s or more;
          
b. "Frequency synthesizer" "electronic
assemblies" having a "frequency switching time"
from one selected frequency to another of less
than 1 ms;

Note:     The control status of "signal analyzers",
signal generators, network analyzers, and
microwave test receivers as stand-alone
instruments is determined by 3A002.c., 3A002.d.,
3A002.e., and 3A002.f., respectively.

c.  Radio-frequency "signal analyzers" as follows:

     c.1.  "Signal analyzers" capable of analyzing
any frequencies exceeding 31.8 GHz but not
exceeding 37.5 GHz and having a 3 dB resolution
bandwidth (RBW) exceeding 10 MHz;

     c.2.  "Signal analyzers" capable of analyzing
frequencies exceeding 43.5 GHz;

     c.3.  "Dynamic signal analyzers" having a
"real-time bandwidth" exceeding 500 kHz;

     Note: 3A002.c.3 does not control those
"dynamic signal analyzers" using only constant
percentage bandwidth filters (also known as
octave or fractional octave filters).

d.     Frequency synthesized signal generators
producing output frequencies, the accuracy and
short term and long term stability of which are
controlled, derived from or disciplined by the
internal master reference oscillator, and having
any of the following:

     d.1. A maximum synthesized frequency
exceeding 31.8 GHz, but not exceeding 43.5 GHz
and rated to generate a 'pulse duration' of less than
100 ns;

     d.2.  A maximum synthesized frequency
exceeding 43.5 GHz;

     d.3.  A "frequency switching time" from one
selected frequency to another as specified by any
of the following:

          d.3.a.     Less than 312 ps; 

          d.3.b.     Less than 100 æs for any
frequency change exceeding 1.6 GHz within the
synthesized frequency range exceeding 3.2 GHz
but not exceeding 10.6 GHz; 

          d.3.c.     Less than 250 æs for any
frequency change exceeding 550 MHz within the
synthesized frequency range exceeding 10.6 GHz
but not exceeding 31.8 GHz;

          d.3.d.     Less than 500 æs for any
frequency change exceeding 550 MHz within the
synthesized frequency range exceeding 31.8 GHz
but not exceeding 43.5 GHz; or

          d.3.e.     Less than 1 ms within the
synthesized frequency range exceeding 43.5 GHz;
or

     d.4. A maximum synthesized frequency
exceeding 3.2 GHz and having all of the
following:

          d.4.a.     A single sideband (SSB) phase
noise, in dBc/Hz, better than - (126+20 log10F-20
log10f) for 10 Hz <F<10 kHz; and

          d.4.b.     A single sideband (SSB) phase
noise, in dBc/Hz, better than - (114+20 log10F-20
log10f) for 10 kHz <F< 500 kHz;

     Technical Note:      In 3A002.d.4, F is the
offset from the operating frequency in Hz and f is
the operating frequency in MHz.

Note 1:  For the purpose of 3A002.d., frequency
synthesized signal generators include arbitrary
waveform and function generators.

Note 2:  3A002.d. does not control equipment in
which the output frequency is either produced by
the addition or subtraction of two or more crystal
oscillator frequencies, or by an addition or
subtraction followed by a multiplication of the
result.

     Technical Notes: 
     
     1.     Arbitrary waveform and function
generators are normally specified by sample rate
(e.g., GSample/s), which is converted to the RF
domain by the Nyquist factor of two. Thus, a 1
GSample/s arbitrary waveform has a direct output
capability of 500 MHz.  Or, when oversampling is
used, the maximum direct output capability is
proportionately lower.

     2. For the purposes of 3A002.d.1., 'pulse
duration' is defined as the time interval between
the leading edge of the pulse achieving 90% of the
peak and the trailing edge of the pulse achieving
10% of the peak.

     Note: 3A002.d does not control equipment in
which the output frequency is either produced by
the addition or subtraction of two or more crystal
oscillator frequencies, or by an addition or
subtraction followed by a multiplication of the
result.

e.  Network analyzers with a maximum operating
frequency exceeding 43.5 GHz;

f.  Microwave test receivers having all of the
following:

     f.1.  A maximum operating frequency
exceeding 43.5 GHz; and

     f.2.  Being capable of measuring amplitude
and phase simultaneously;

g.  Atomic frequency standards being any of the
following:

     g.1.     "Space qualified";

     g.2.     Non-rubidium and having a long-term
stability less (better) than 1 x 10-11/month; or

     g.3.     Non-"space qualified" and having all
of the following:

          g.3.a.     Being a rubidium standard;

          g.3.b.     Long-term stability less (better)
than 1 x 10-11/month; and

          g.3.c.     Total power consumption of less
than 1 Watt.


3A003     Spray cooling thermal management
systems employing closed loop fluid handling
and reconditioning equipment in a sealed
enclosure where a dielectric fluid is sprayed
onto electronic components using specially
designed spray nozzles that are designed to
maintain electronic components within their
operating temperature range, and specially
designed components therefor.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 2
               
AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:      N/A
     CIV:     N/A

List of Items Controlled

     Unit: Number of systems, components in $
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3A101  Electronic equipment, devices and
components, other than those controlled by
3A001, as follows (see List of Items
Controlled).

License Requirements

     Reason for Control:   MT, AT
                                   
Control(s)                              Country Chart
     
MT applies to entire entry           MT Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A
                                        
List of Items Controlled

     Unit: Number
     Related Controls: Items controlled in 3A101.a
     are subject to the export licensing authority of
     the U.S. Department of State, Directorate of
     Defense Trade Controls (See 22 CFR part
     121).
     Related Definitions: N/A
     Items:

a. Analog-to-digital converters, usable in
"missiles", designed to meet military
specifications for ruggedized equipment;

b. Accelerators capable of delivering
electromagnetic radiation produced by
bremsstrahlung from accelerated electrons of 2
MeV or greater, and systems containing those
accelerators, usable for the "missiles" or the
subsystems of "missiles".

     Note:  3A101.b above does not include
equipment specially designed for medical
purposes.


3A201  Electronic components, other than
those controlled by 3A001, as follows (see List
of Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A
     GBS:     N/A
     CIV:     N/A

List of Items Controlled

     Unit:  Number
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Also see 3A001.e.2
     (capacitors) and 3A001.e.3 (superconducting
     electromagnets).  (3) Superconducting
     electromagnets specially designed or prepared
     for use in separating uranium isotopes are
     subject to the export licensing authority of the
     Nuclear Regulatory Commission (see 10 CFR
     part 110).
     Related Definitions:  N/A
     Items:

a.  Pulse discharge capacitors having either of the
following sets of characteristics:

     a.1.  Voltage rating greater than 1.4 kV,
energy storage greater than 10 J, capacitance
greater than 0.5  F, and series inductance less
than 50 nH; or

     a.2.  Voltage rating greater than 750 V,
capacitance greater than 0.25  F, and series
inductance less than 10 nH;

b.  Superconducting solenoidal electromagnets
having all of the following characteristics:

     b.1.  Capable of creating magnetic fields
greater than 2 T;

     b.2.  A ratio of length to inner diameter
greater than 2;

     b.3.  Inner diameter greater than 300 mm; and

     b.4.  Magnetic field uniform to better than 1%
over the central 50% of the inner volume;

     Note:  3A201.b does not control magnets
specially designed for and exported "as parts of"
medical nuclear magnetic resonance (NMR)
imaging systems.  The phrase "as part of" does
not necessarily mean physical part in the same
shipment; separate shipments from different
sources are allowed, provided the related export
documents clearly specify that the shipments are
dispatched "as part of" the imaging systems.

c.  Flash X-ray generators or pulsed electron
accelerators having either of the following sets of
characteristics:

     c.1.  An accelerator peak electron energy of
500 keV or greater, but less than 25 MeV, and
with a "figure of merit" (K) of 0.25 or greater; or

     c.2.  An accelerator peak electron energy of
25 MeV or greater, and a "peak power" greater
than 50 MW;

     Note:  3A201.c does not control accelerators
that are component parts of devices designed for
purposes other than electron beam or X-ray
radiation (electron microscopy, for example) nor
those designed for medical purposes.

     Technical Notes:

     1. The "figure of merit" K is defined as: K =
1.7 x 103V2.65Q.  V is the peak electron energy in
million electron volts.  If the accelerator beam
pulse duration is less than or equal to 1  s, then
Q is the total accelerated charge in Coulombs.  If
the accelerator beam pulse duration is greater
than 1  s, then Q is the maximum accelerated
charge in 1  s.  Q equals the intergral of i with
respect to t, over the lesser of 1  s or the time
duration of the beam pulse (Q =   idt), where i is
beam current in amperes and t is time in seconds.

     2. "Peak power" = (peak potential in volts) x
(peak beam current in amperes).

     3. In machines based on microwave
accelerating cavities, the time duration of the
beam pulse is the lesser of 1  s or the duration of
the bunched beam packet resulting from one
microwave modulator pulse.

     4. In machines based on microwave
accelerating cavities, the peak beam current is the
average current in the time duration of a bunched
beam packet.


3A225  Frequency changers (also known as
converters or inverters) or generators, other
than those described in 0B001.c.11, having all
of the following characteristics (see List of
Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart

NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Number
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Frequency changers
     (also known as converters or inverters)
     specially designed or prepared for use in
     separating uranium isotopes are subject to the
     export licensing authority of the Nuclear
     Regulatory Commission (see 10 CFR part
     110).
     Related Definitions:  N/A
     Items:

a.  A multiphase output capable of providing a
power of 40 W or more;

b.  Capable of operating in the frequency range
between 600 and 2000 Hz;

c.  Total harmonic distortion below 10%; and

d.  Frequency control better than 0.1%.
     

3A226  High-power direct current power
supplies, other than those described in
0B001.j.6, having both of the following
characteristics (see List of Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  $ value
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Also see ECCN 3A227. 
     (3) Direct current power supplies specially
     designed or prepared for use in separating
     uranium isotopes are subject to the export
     licensing authority of the Nuclear Regulatory
     Commission (see 10 CFR part 110).
     Related Definitions:  N/A
     Items:

a.  Capable of continuously producing, over a time
period of 8 hours, 100 V or greater with current
output of 500 A or greater; and

b.  Current or voltage stability better than 0.1%
over a time period of 8 hours.


3A227  High-voltage direct current power
supplies, other than those described in
0B001.j.5, having both of the following
characteristics (see List of Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  $ value
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Also see ECCN 3A226. 
     (3) Direct current power supplies specially
     designed or prepared for use in separating
     uranium isotopes are subject to the export
     licensing authority of the Nuclear Regulatory
     Commission (see 10 CFR part 110).
     Related Definitions:  N/A
     Items:

a.  Capable of continuously producing, over a time
period of 8 hours, 20 kV or greater with current
output of 1 A or greater; and

b.  Current or voltage stability better than 0.1%
over a time period of 8 hours.


3A228  Switching devices, as follows (see List
of Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Number
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Also see ECCN
     3A991.k.
     Related Definitions: N/A
     Items:

a.  Cold-cathode tubes, whether gas filled or not,
operating similarly to a spark gap, having all of
the following characteristics:

     a.1.  Containing three or more electrodes;

     a.2.  Anode peak voltage rating of 2.5 kV or
more;

     a.3.  Anode peak current rating of 100 A or
more; and

     a.4.  Anode delay time of 10 microsecond or
less.

Technical Note: 3A228.a includes gas krytron
tubes and vacuum sprytron tubes.

b.  Triggered spark-gaps having both of the
following characteristics:

     b.1.  An anode delay time of 15 s or less; and 

     b.2.  Rated for a peak current of 500 A or
more.

c.  Modules or assemblies with a fast switching
function having all of the following
characteristics:

     c.1.  Anode peak voltage rating greater than
2 kV;

     c.2.  Anode peak current rating of 500 A or
more; and

     c.3.  Turn-on time of 1 s or less.
     

3A229  Firing sets and equivalent high-current
pulse generators (for detonators controlled by
3A232), as follows (see List of Items
Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart

NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  Number
     Related Controls:  (1) See ECCNs 3E001 and
     1E001("development" and "production") and
     3E201 and 1E201 ("use") for technology for
     items controlled under this entry.  (2) High
     explosives and related equipment for military
     use are subject to the export licensing
     authority of the U.S. Department of State,
     Directorate of Defense Trade Controls (see 22
     CFR part 121).
     Related Definitions:  In 3A229.b.5, "rise
     time" is defined as the time interval from 10%
     to 90% current amplitude when driving a
     resistive load.
     ECCN Controls:  3A229.b includes xenon
     flash-lamp drivers.
     Items:

a.  Explosive detonator firing sets designed to
drive multiple controlled detonators controlled by
3A232;

b.  Modular electrical pulse generators (pulsers)
having all of the following characteristics:

     b.1.  Designed for portable, mobile, or
ruggedized use;

     b.2.  Enclosed in a dust-tight enclosure;

     b.3.  Capable of delivering their energy in less
than 15  s ;

     b.4.  Having an output greater than 100 A;

     b.5.  Having a "rise time" of less than 10  s
into loads of less than 40 ohms;

     b.6.  No dimension greater than 254 mm;

     b.7.  Weight less than 25 kg; and

     b.8.  Specified for use over an extended
temperature range 223 K (-50øC) to 373 K 
(100øC) or specified as suitable for aerospace
applications.


3A230  High-speed pulse generators having
both of the following characteristics (see List of
Items Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A


List of Items Controlled

     Unit:  Number
     Related Controls:  See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.
     Related Definitions:  In 3A230.b, "pulse
     transition time" is defined as the time interval
     between 10% and 90% voltage amplitude.
     Items:

a.  Output voltage greater than 6 V into a resistive
load of less than 55 ohms; and

b.  "Pulse transition time" less than 500 ps.
               

3A231  Neutron generator systems, including
tubes, having both of the following
characteristics (see List of Items Controlled).

License Requirements

     Reason for Control:   NP, AT          

Control(s)                              Country Chart
     
NP applies to entire entry          NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  Number; parts and accessories in $
     value
     Related Controls:  See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.
     Related Definitions:  N/A
     Items:

a.  Designed for operation without an external
vacuum system; and

b.  Utilizing electrostatic acceleration to induce a
tritium-deuterium nuclear reaction.

                                   
3A232  Detonators and multipoint initiation
systems, as follows (see List of Items
Controlled).

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  Number
     Related Controls: (1) See 1A007 for
     electrically driven explosive detonators.  (2)
     See ECCNs 3E001 ("development" and
     "production") and 3E201 ("use") for
     technology for items controlled under this
     entry.  (3) High explosives and related
     equipment for military use are subject to the
     export licensing authority of the U.S.
     Department of State, Directorate of Defense
     Trade Controls (see 22 CFR part 121).
     Related Definitions:  N/A
     ECCN Controls:  This entry does not control
     detonators using only primary explosives,
     such as lead azide.
     Items:

a.  [RESERVED]

b.  Arrangements using single or multiple
detonators designed to nearly simultaneously
initiate an explosive surface over an area greater
than 5,000 mm2 from a single firing signal with an
initiation timing spread over the surface of less
than 2.5  s.

Technical Note:    The word initiator is
sometimes used in place of the word detonator.

          
3A233  Mass spectrometers, other than those
described in 0B002.g, capable of measuring
ions of 230 atomic mass units or greater and
having a resolution of better than 2 parts in
230, and ion sources therefor.

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit:  Number
     Related Controls:  (1) See ECCNs 3E001
     ("development" and "production") and 3E201
     ("use") for technology for items controlled
     under this entry.  (2) Mass spectrometers
     specially designed or prepared for analyzing
     on-line samples of UF6 gas streams are
     subject to the export licensing authority of the
     Nuclear Regulatory Commission (see 10 CFR
     part 110).
     Related Definitions:  N/A
     Items:

a.  Inductively coupled plasma mass spectrometers
(ICP/MS);

b.  Glow discharge mass spectrometers (GDMS);

c. Thermal ionization mass spectrometers (TIMS);

d.  Electron bombardment mass spectrometers that
have a source chamber constructed from, lined
with or plated with materials resistant to UF6;

e. Molecular beam mass spectrometers having
either of the following characteristics:

     e.1.  A source chamber constructed from,
lined with or plated with stainless steel or
molybdenum and equipped with a cold trap
capable of cooling to 193 K (-80ø C) or less; or

     e.2.  A source chamber constructed from,
lined with or plated with materials resistant to
UF6;

f.  Mass spectrometers equipped with a
microfluorination ion source designed for
actinides or actinide fluorides.

     
3A292  Oscilloscopes and transient recorders
other than those controlled by 3A002.a.5, and
specially designed components therefor.

License Requirements

     Reason for Control:   NP, AT


Control(s)                              Country Chart
     
NP applies to entire entry           NP Column 2

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Number
     Related Controls:  See ECCN 3E292
     ("development", "production", and "use") for
     technology for items controlled under this
     entry.
     Related Definitions: "Bandwidth" is defined
     as the band of frequencies over which the
     deflection on the cathode ray tube does not
     fall below 70.7% of that at the maximum
     point measured with a constant input voltage
     to the oscilloscope amplifier.
     Items:

a.  Non-modular analog oscilloscopes having a
bandwidth of 1 GHz or greater; 

b.  Modular analog oscilloscope systems having
either of the following characteristics:

     b.1.  A mainframe with a bandwidth of 1 GHz
or greater; or

     b.2. Plug-in modules with an individual
bandwidth of 4 GHz or greater;

c.  Analog sampling oscilloscopes for the analysis
of recurring phenomena with an effective
bandwidth greater than 4 GHz;

d.  Digital oscilloscopes and transient recorders,
using analog-to-digital conversion techniques,
capable of storing transients by sequentially
sampling single-shot inputs at successive intervals
of less than 1 ns (greater than 1 giga-sample per
second), digitizing to 8 bits or greater resolution
and storing 256 or more samples.

     Note:  Specially designed components
controlled by this item are the following, for
analog oscilloscopes:

     1. Plug-in units;

     2. External amplifiers;

     3. Pre-amplifiers;

     4. Sampling devices;

     5. Cathode ray tubes.


3A980  Voice print identification and analysis
equipment and parts, n.e.s.

License Requirements

     Reason for Control:   CC

Control(s)                              Country Chart
     
CC applies to entire entry           CC Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.

3A981  Polygraphs (except biomedical
recorders designed for use in medical facilities
for monitoring biological and neurophysical
responses); fingerprint analyzers, cameras and
equipment, n.e.s.; automated fingerprint and
identification retrieval systems, n.e.s.;
psychological stress analysis equipment;
electronic monitoring restraint devices; and
specially designed parts and accessories, n.e.s.

License Requirements

     Reason for Control:   CC

Control(s)                              Country Chart

CC applies to entire entry           CC Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3A991  Electronic devices and components not
controlled by 3A001.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart
     
AT applies to entire entry         AT Column 1  

License Requirements Notes:  

See 744.17 of the EAR for additional license
requirements for commodities classified as
3A991.a.1.

License Exceptions  

     LVS:     N/A     
     GBS:     N/A      
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number
     Related Controls: N/A
     Related Definitions: N/A
     Items:

a.  "Microprocessor microcircuits",
"microcomputer microcircuits", and
microcontroller microcircuits having any of the
following:

     a.1. A performance speed of 5 GFLOPS or
more and an arithmetic logic unit with an access
width of 32 bit or more;

     a.2. A clock frequency rate exceeding 25
MHz; or

     a.3. More than one data or instruction bus or
serial communication port that provides a direct
external interconnection between parallel
"microprocessor microcircuits" with a transfer
rate of 2.5 Mbyte/s. 

b.  Storage integrated circuits, as follows:     

     b.1. Electrical erasable programmable
read-only memories (EEPROMs) with a storage
capacity;

          b.1.a.  Exceeding 16 Mbits per package
for flash memory types; or     

          b.1.b.  Exceeding either of the following
limits for all other EEPROM types:

               b.1.b.1.  Exceeding 1 Mbit per
package; or

               b.1.b.2.  Exceeding 256 kbit per
package and a maximum access time of less than
80 ns;

     b.2.  Static random access memories
(SRAMs) with a storage capacity:

          b.2.a.  Exceeding 1 Mbit per package; or

          b.2.b.  Exceeding 256 kbit per package
and a maximum access time of less than 25 ns;

c.  Analog-to-digital converters having any of the
following: 

     c.1.  A resolution of 8 bit or more, but less
than 12 bit, with an output rate greater than 100
million words per second; 

     c.2. A resolution of 12 bit with an output rate
greater than 5 million words per second; 

     c.3.  A resolution of more than 12 bit but
equal to or less than 14 bit withan output rate
greater than 500 thousand words per second; or

     c.4.  A resolution of more than 14 bit with an
output rate greater than 500 thousand words per
second.

d.  Field programmable logic devices having
either of the following:

     d.1.  An equivalent gate count of more than
5000 (2 input gates); or

     d.2.  A toggle frequency exceeding 100 MHz;

e.  Fast Fourier Transform (FFT) processors
having a rated execution time for a 1,024 point
complex FFT of less than 1 ms.

f. Custom integrated circuits for which either the
function is unknown, or the control status of the
equipment in which the integrated circuits will be
used is unknown to the manufacturer, having any
of the following:

     f.1.  More than 144 terminals; or

     f.2.  A typical "basic propagation delay time"
of less than 0.4 ns.

g.  Traveling wave tubes, pulsed or continuous
wave, as follows:

     g.1.  Coupled cavity tubes, or derivatives
thereof;

     g.2.  Helix tubes, or derivatives thereof, with
any of the following:

          g.2.a.  An "instantaneous bandwidth" of
half an octave or more; and

          g.2.b. The product of the rated average
output power (expressed in kW) and the
maximum operating frequency (expressed in GHz)
of more than 0.2;

          g.2.c.  An "instantaneous bandwidth" of
less than half an octave; and

          g.2.d. The product of the rated average
output power (expressed in kW) and the
maximum operating frequency (expressed in GHz)
of more than 0.4;

h.  Flexible waveguides designed for use at
frequencies exceeding 40 GHz;

i.  Surface acoustic wave and surface skimming
(shallow bulk) acoustic wave devices (i.e., "signal
processing" devices employing elastic waves in
materials), having either of the following:

     i.1.  A carrier frequency exceeding 1 GHz; or

     i.2.  A carrier frequency of 1 GHz or less; and

          i.2.a.  A frequency side-lobe rejection
exceeding 55 Db;

          i.2.b.  A product of the maximum delay
time and bandwidth (time in microseconds and
bandwidth in MHz) of more than 100; or

          i.2.c.  A dispersive delay of more than 10
microseconds.

j.   Cells as follows:

     j.1. Primary cells having an energy density of
550 Wh/kg or less at 293 K (20§C);

     j.2. Secondary cells having an energy density
of 250 Wh/kg or less at 293 K (20§C). 

     Note:     3A991.j. does not control batteries,
including single cell batteries.

     Technical Notes: 

     1.     For the purpose of 3A991.j energy density
(Wh/kg) is calculated from the nominal voltage
multiplied by the nominal capacity in
ampere-hours divided by the mass in kilograms. If
the nominal capacity is not stated, energy density
is calculated from the nominal voltage squared
then multiplied by the discharge duration in hours
divided by the discharge load in Ohms and the
mass in kilograms.

     2.     For the purpose of 3A991.j, a 'cell' is
defined as an electrochemical device, which has
positive and negative electrodes, and electrolyte,
and is a source of electrical energy.  It is the basic
building block of a battery.

     3.     For the purpose of 3A991.j.1, a 'primary
cell' is a 'cell' that is not designed to be charged
by any other source.

     4.     For the purpose of 3A991.j.2., a
'secondary cell' is a 'cell' that is designed to be
charged by an external electrical source.

k. "Superconductive" electromagnets or solenoids
specially designed to be fully charged or
discharged in less than one minute, having all of
the following:

     Note:  3A991.k does not control
"superconductive" electromagnets or solenoids
designed for Magnetic Resonance Imaging (MRI)
medical equipment.

     k.1.  Maximum energy delivered during the
discharge divided by the duration of the discharge
of more than 500 kJ per minute;

     k.2.  Inner diameter of the current carrying
windings of more than 250 mm; and

     k.3.  Rated for a magnetic induction of more
than 8T or "overall current density" in the
winding of more than 300 A/mm2.

l.  Circuits or systems for electromagnetic energy
storage, containing components manufactured
from "superconductive" materials specially
designed for operation at temperatures below the
"critical temperature" of at least one of their
"superconductive" constituents, having all of the
following:

     l.1.  Resonant operating frequencies
exceeding 1 MHz;

     l.2.  A stored energy density of 1 MJ/M3 or
more; and

     l.3.  A discharge time of less than 1 ms;

m. Hydrogen/hydrogen-isotope thyratrons of
ceramic-metal construction and rate for a peak
current of 500 A or more;

n. Digital integrated circuits based on any
compound semiconductor having an equivalent
gate count of more than 300 (2 input gates).

o.  Solar cells, cell-interconnect-coverglass (CIC)
assemblies, solar panels, and solar arrays, which
are "space qualified" and not controlled by
3A001.e.4.
                         

3A992  General purpose electronic equipment
not controlled by 3A002.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart
     
AT applies to entire entry         AT Column 1

License Exceptions  

     LVS:     $1000 for Syria for .a only     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number
     Related Controls: N/A
     Related Definitions: N/A
     Items:

a.  Electronic test equipment, n.e.s.

b.  Digital instrumentation magnetic tape data
recorders having any of the following any of the
following characteristics;

     b.1.  A maximum digital interface transfer rate
exceeding 60 Mbit/s and employing helical scan
techniques;

     b.2.  A maximum digital interface transfer rate
exceeding 120 Mbit/s and employing fixed head
techniques; or

     b.3.  "Space qualified";

c.  Equipment, with a maximum digital interface
transfer rate exceeding 60 Mbit/s, designed to
convert digital video magnetic tape recorders for
use as digital instrumentation data recorders;


3A999 Specific processing equipment, n.e.s., as
follows (see List of Items Controlled). 

License Requirements

     Reason for Control:   AT

Control(s)                         Country Chart

AT applies to entire entry.  A license is required
for items controlled by this entry to North Korea
for anti-terrorism reasons.  The Commerce
Country Chart is not designed to determine AT
licensing requirements for this entry.  See 742.19
of the EAR for additional information.

License Exceptions

     LVS:     N/A
     GBS:     N/A
     CIV:     N/A

List of Items Controlled

     Unit: $ value
     Related Controls: See also 0B002, 3A225 (for
     frequency changes capable of operating in the
     frequency range of 600 Hz and above), 3A233
     Related Definitions: N/A
     Items:
                                
a. Frequency changers capable of operating in the
frequency range from 300 up to 600 Hz, n.e.s;

b. Mass spectrometers n.e.s;  

c. All flash x-ray machines, and components of
pulsed power systems designed thereof, including
Marx generators, high power pulse shaping
networks, high voltage capacitors, and triggers;

d. Pulse amplifiers, n.e.s.;

e. Electronic equipment for time delay generation
or time interval measurement, as follows:

     e.1. Digital time delay generators with a
resolution of 50 nanoseconds or less over time
intervals of 1 microsecond or greater; or

     e.2.  Multi-channel (three or more) or modular
time interval meter and chronometry equipment
with resolution of 50 nanoseconds or less over
time intervals of 1 microsecond or greater;

f. Chromatography and spectrometry analytical
instruments.


                    B.  TEST, INSPECTION AND
                      PRODUCTION EQUIPMENT
                                
3B001  Equipment for the manufacturing of
semiconductor devices or materials, as follows
(see List of Items Controlled) and specially
designed components and accessories therefor.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

     License Requirement Notes:  See 743.1 of
the EAR for reporting requirements for exports
under License Exceptions.

License Exceptions  

     LVS: $500     
     GBS: Yes, except 3B001.a.2 (metal organic
          chemical vapor deposition reactors),
          a.3 (molecular beam epitaxial growth
          equipment using gas sources), .e 
          (automatic loading multi-chamber
          central wafer handling systems only
          if connected to equipment controlled
          by 3B001.a.2, a.3, or .f), and .f
          (lithography equipment).
     CIV: Yes for equipment controlled by 
          3B001.a.1.

List of Items Controlled

     Unit: Number
     Related Controls: See also 3B991
     Related Definitions: N/A
     Items:

a.  Equipment designed for epitaxial growth as
follows:

     a.1.     Equipment capable of producing a
layer of any material other than silicon with a
thickness uniform to less than ñ 2.5% across a
distance of 75 mm or more;

     Note:     3B001.a.1 includes atomic layer
epitaxy (ALE) equipment.

     a.2.  Metal Organic Chemical Vapor
Deposition (MOCVD) reactors specially designed
for compound semiconductor crystal growth by
the chemical reaction between materials
controlled by 3C003 or 3C004;

     a.3.  Molecular beam epitaxial growth
equipment using gas or solid sources;

b.  Equipment designed for ion implantation and
having any of the following:

     b.1.  A beam energy (accelerating voltage)
exceeding 1MeV;

     b.2.  Being specially designed and optimized
to operate at a beam energy (accelerating voltage
of less than 2 keV;

     b.3.  Direct write capability; or

     b.4.   A beam energy of 65 keV or more and a
beam current of 45 mA or more for  high energy
oxygen implant into a heated semiconductor
material "substrate";

c.  Anisotropic plasma dry etching equipment as
follows:

     c.1.  Equipment with cassette-to-cassette
operation and load-locks, and having any of the
following:

          c.1.a.  Designed or optimized to produce
critical dimensions of 180 nm or less with ñ 5% 3
sigma precision; or

          c.1.b.  Designed for generating less than
0.04 particles/cmý with a measurable particle size
greater than 0.1  m in diameter;

     c.2.  Equipment specially designed for
equipment controlled by 3B001.e. and having any
of the following:

          c.2.a.  Designed or optimized to produce
critical dimensions of 180 nm or less with ñ 5% 3
sigma precision; or

          c.2.b.  Designed for generating less than
0.04 particles/cmý with a measurable particle size
greater than 0.1  m in diameter;

d.  Plasma enhanced Chemical Vapor Deposition
(CVD) equipment as follows:

     d.1.  Equipment with cassette-to-cassette
operation and load-locks, and designed according
to the manufacturer's specifications or optimized
for use in the production of semiconductor
devices with critical dimensions of 180 nm or
less; 

     d.2.  Equipment specially designed for
equipment controlled by 3B001.e. and designed
according to the manufacturer's specifications or
optimized for use in the production of
semiconductor devices with critical dimensions of
180 nm or less; 

e.  Automatic loading multi-chamber central wafer
handling systems having all of the following:

     e.1.  Interfaces for wafer input and output, to
which more than two pieces of semiconductor
processing equipment are to be connected; and

     e.2.  Designed to form an integrated system in
a vacuum environment for sequential multiple
wafer processing;

     Note:  3B001.e. does not control automatic
robotic wafer handling systems not designed to
operate in a vacuum environment.

f.  Lithography equipment as follows:

     f.1.  Align and expose step and repeat (direct
step on wafer) or step and scan (scanner)
equipment for wafer processing using
photo-optical or X-ray methods and having any of
the following:

          f.1.a.  A light source wavelength shorter
than 245 nm; or

          f.1.b.  Capable of producing a pattern with
a "minimum resolvable feature size" of 180 nm or
less;

      Technical Note: The 'minimum resolvable
feature size' is calculated by the following
formula:

MRF =  
         (an exposure light source wavelength in nm) x
                           (K factor)
-------------------------------------------------------
               numerical aperture

where the K factor = 0.45
MRF = 'minimum resolvable feature size'.
     
     f.2  Imprint lithography equipment capable of
production features of 180 nm or less;

          Note:  3B001.f.2 includes:

          -     Micro contact printing tools

          -     Hot embossing tools

          -     Nano-imprint lithography tools

            -     Step and flash imprint lithography
               (S-FIL) tools
     
     f.3. Equipment specially designed for mask
making or semiconductor device processing using
direct writing methods, having all of the
following:
               
          f.3.a.  Using deflected focused electron
beam, ion beam or "laser" beam; and

          f.3.b.  Having any of the following:

               f.3.b.1.     A spot size smaller than 0.2
æm;
               f.3.b.2.     Being capable of producing a
pattern with a feature size of less than 1 æm; or

               f.3.b.3.     An overlay accuracy of better
than ñ 0.20 æm (3 sigma);

g.  Masks and reticles, designed for integrated
circuits controlled by 3A001;

h.  Multi-layer masks with a phase shift layer;

     Note:     3B001.h. does not control multi-layer
masks with a phase shift layer designed for the
fabrication of memory devices not controlled by
3A001.

i.  Imprint lithography templates designed for
integrated circuits by 3A001.
     

3B002  Test equipment specially designed for
testing finished or unfinished semiconductor
devices as follows (see List of Items Controlled)
and specially designed components and
accessories therefor.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     $500     
     GBS:     Yes 
     CIV:     N/A

List of Items Controlled

     Unit: Number
     Related Controls: See also 3A999.a and
     3B992
     Related Definitions: N/A

     Items:

a.  For testing S-parameters of transistor devices
at frequencies exceeding 31.8 GHz;

b. [RESERVED]

c.  For testing microwave integrated circuits
controlled by 3A001.b.2.


3B991  Equipment not controlled by 3B001 for
the manufacture of electronic components and
materials, and specially designed components
and accessories therefor.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart
     
AT applies to entire entry           AT Column 1

License Exceptions  

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number, and components
     and accessories in $ value
     Related Controls: N/A
     Related Definitions: 'Sputtering' is an overlay
     coating process wherein positively charged
     ions are accelerated by an electric field
     towards the surface of a target (coating
     material). The kinetic energy of the impacting
     ions is sufficient to cause target surface atoms
     to be released and deposited on the substrate.
     (Note: Triode, magnetron or radio frequency
     sputtering to increase adhesion of coating and
     rate of deposition are ordinary modifications
     of the process.)
     Items:

a.  Equipment specially designed for the
manufacture of electron tubes, optical elements
and specially designed components therefor
controlled by 3A001 or 3A991;

b.  Equipment specially designed for the
manufacture of semiconductor devices, integrated
circuits and "electronic assemblies", as follows,
and systems incorporating or having the
characteristics of such equipment:

     Note:  3B991.b also controls equipment used
or modified for use in the manufacture of other
devices, such as imaging devices, electro-optical
devices, acoustic-wave devices.

     b.1.  Equipment for the processing of
materials for the manufacture of devices and
components as specified in the heading of
3B991.b, as follows:

     Note:  3B991 does not control quartz furnace
tubes, furnace liners, paddles, boats (except
specially designed caged boats), bubblers,
cassettes or crucibles specially designed for the
processing equipment controlled by 3B991.b.1.

          b.1.a.  Equipment for producing
polycrystalline silicon and materials controlled by
3C001;

          b.1.b. Equipment specially designed for
purifying or processing III/V and II/VI
semiconductor materials controlled by 3C001,
3C002, 3C003,  3C004, or 3C005 except crystal
pullers, for which see 3B991.b.1.c below;

          b.1.c.  Crystal pullers and furnaces, as
follows:

     Note:  3B991.b.1.c does not control diffusion
and oxidation furnaces.

               b.1.c.1.  Annealing or recrystallizing
equipment other than constant temperature
furnaces employing high rates of energy transfer
capable of processing wafers at a rate exceeding
0.005 m2 per minute;

               b.1.c.2.  "Stored program controlled"
crystal pullers having any of the following
characteristics:

                    b.1.c.2.a.  Rechargeable without
replacing the crucible container;

                    b.1.c.2.b. Capable of operation at
pressures above 2.5 x 105 Pa; or

                    b.1.c.2.c.  Capable of pulling
crystals of a diameter exceeding 100 mm;

          b.1.d.  "Stored program controlled"
equipment for epitaxial growth having any of the
following characteristics:

               b.1.d.1.  Capable of producing a
silicon layer with a thickness uniform to less than
ñ2.5% across a distance of 200 mm or more;

               b.1.d.2.  Capable of producing a layer
of any material other than silicon with a thickness
uniformity across the wafer of equal to or better
than ñ 3.5%; or

               b.1.d.3.  Rotation of individual wafers
during processing; 

          b.1.e.  Molecular beam epitaxial growth
equipment;

          b.1.f.  Magnetically enhanced 'sputtering'
equipment with specially designed integral load
locks capable of transferring wafers in an isolated
vacuum environment;

          b.1.g.  Equipment specially designed for
ion implantation, ion-enhanced or photo-enhanced
diffusion, having any of the following
characteristics:

               b.1.g.1.  Patterning capability;

               b.1.g.2.  Beam energy (accelerating
voltage) exceeding 200 keV;

               b.1.g.3  Optimized to operate at a
beam energy (accelerating voltage) of less than 10
keV; or

               b.1.g.4.  Capable of high energy
oxygen implant into a heated "substrate";

          b.1.h.  "Stored program controlled"
equipment for the selective removal (etching) by
means of anisotropic dry methods (e.g., plasma),
as follows: 

               b.1.h.1.  Batch types having either of
the following:

                    b.1.h.1.a.  End-point detection,
other than optical emission spectroscopy types; or

                    b.1.h.1.b. Reactor operational
(etching) pressure of 26.66 Pa or less;

               b.1.h.2.  Single wafer types having
any of the following:

                    b.1.h.2.a.  End-point detection,
other than optical emission spectroscopy types;

                    b.1.h.2.b.  Reactor operational
(etching) pressure of 26.66 Pa or less; or

                    b.1.h.2.c.  Cassette-to-cassette and
load locks wafer handling;

    Notes:  1. "Batch types" refers to machines not
specially designed for production processing of
single wafers.  Such machines can process two or
more wafers simultaneously with common process
parameters, e.g., RF power, temperature, etch gas
species, flow rates.

    2.  "Single wafer types" refers to machines
specially designed for production processing of
single wafers. These machines may use automatic
wafer handling techniques to load a single wafer
into the equipment for processing. The definition
includes equipment that can load and process
several wafers but where the etching parameters,
e.g., RF power or end point, can be independently
determined for each individual wafer.

          b.1.i.  "Chemical vapor deposition"
(CVD) equipment, e.g., plasma-enhanced CVD
(PECVD) or photo-enhanced CVD, for
semiconductor device manufacturing, having
either of the following capabilities, for deposition
of oxides, nitrides, metals or polysilicon:

               b.1.i.1.  "Chemical vapor deposition"
equipment operating below 105 Pa; or

               b.1.i.2.  PECVD equipment operating
either below 60 Pa (450 millitorr) or having
automatic cassette-to-cassette and load lock wafer
handling;

     Note: 3B991.b.1.i does not control low
pressure "chemical vapor deposition" (LPCVD)
systems or reactive "sputtering" equipment.

          b.1.j. Electron beam systems specially
designed or modified for mask making or
semiconductor device processing having any of
the following characteristics:

               b.1.j.1.  Electrostatic beam deflection;

               b.1.j.2.  Shaped, non-Gaussian beam
profile;

               b.1.j.3.  Digital-to-analog conversion
rate exceeding 3 MHz;

               b.1.j.4.  Digital-to-analog conversion
accuracy exceeding 12 bit; or

               b.1.j.5.  Target-to-beam position
feedback control precision of 1 micrometer or
finer;

     Note:  3B991.b.1.j does not control electron
beam deposition systems or general purpose
scanning electron microscopes.

          b.1.k.  Surface finishing equipment for the
processing of semiconductor wafers as follows:

               b.1.k.1.  Specially designed
equipment for backside processing of wafers
thinner than 100 micrometer and the subsequent
separation thereof; or

               b.1.k.2.  Specially designed
equipment for achieving a surface roughness of
the active surface of a processed wafer with a
two-sigma value of 2 micrometer or less, total
indicator reading (TIR);

         Note: 3B991.b.1.k does not control
single-side lapping and polishing equipment for
wafer surface finishing.
                                 
          b.1.l.  Interconnection equipment which
includes common single or multiple vacuum
chambers specially designed to permit the
integration of any equipment controlled by 3B991
into a complete system;

          b.1.m.  "Stored program controlled"
equipment using "lasers" for the repair or
trimming of "monolithic integrated circuits" with
either of the following characteristics:

               b.1.m.1.  Positioning accuracy less
than ñ 1 micrometer; or

               b.1.m.2.  Spot size (kerf width) less
than 3 micrometer.

     b.2.  Masks, mask "substrates", mask-making
equipment and image transfer equipment for the
manufacture of devices and components as
specified in the heading of 3B991, as follows:

     Note:  The term "masks" refers to those used
in electron beam lithography, X-ray lithography,
and ultraviolet lithography, as well as the usual
ultraviolet and visible photo-lithography.

          b.2.a.  Finished masks, reticles and
designs therefor, except:

               b.2.a.1. Finished masks or reticles for
the production of unembargoed integrated
circuits; or

               b.2.a.2.  Masks or reticles, having
both of the following characteristics:

                    b.2.a.2.a.  Their design is based
on geometries of 2.5 micrometer or more; and

                    b.2.a.2.b.  The design does not
include special features to alter the intended use
by means of production equipment or "software";

          b.2.b.  Mask "substrates" as follows:

               b.2.b.1.  Hard surface (e.g.,
chromium, silicon, molybdenum) coated
"substrates" (e.g., glass, quartz, sapphire) for the
preparation of masks having dimensions
exceeding 125 mm x 125 mm; or

               b.2.b.2.  "Substrates" specially
designed for X-ray masks;

          b.2.c.  Equipment, other than general
purpose computers, specially designed for
computer aided design (CAD) of semiconductor
devices or integrated circuits;

          b.2.d.  Equipment or machines, as
follows, for mask or reticle fabrication:

               b.2.d.1. Photo-optical step and repeat
cameras capable of producing arrays larger than
100 mm x 100 mm, or capable of producing a
single exposure larger than 6 mm x 6 mm in the
image (i.e., focal) plane, or capable of producing
line widths of less than 2.5 micrometer in the
photoresist on the "substrate";

               b.2.d.2.  Mask or reticle fabrication
equipment using ion or "laser" beam lithography
capable of producing line widths of less than 2.5
micrometer; or

               b.2.d.3.  Equipment or holders for
altering masks or reticles or adding pellicles to
remove defects;

         Note:  3B991.b.2.d.1 and b.2.d.2 do not
control mask fabrication equipment using
photo-optical methods which was either
commercially available before the 1st January,
1980, or has a performance no better than such
equipment.

          b.2.e.  "Stored program controlled"
equipment for the inspection of masks, reticles or
pellicles with:

               b.2.e.1.  A resolution of 0.25
micrometer or finer; and

               b.2.e.2.  A precision of 0.75
micrometer or finer over a distance in one or two
coordinates of 63.5 mm or more;

     Note:  3B991.b.2.e does not control general
purpose scanning electron microscopes except
when specially designed and instrumented for
automatic pattern inspection.

          b.2.f.  Align and expose equipment for
wafer production using photo-optical or X-ray
methods, e.g., lithography equipment, including
both projection image transfer equipment and step
and repeat (direct step on wafer) or step and scan
(scanner) equipment, capable of performing any
of the following functions:

     Note:  3B991.b.2.f does not control
photo-optical contact and proximity mask align
and expose equipment or contact image transfer
equipment.
                    
               b.2.f.1.  Production of a pattern size
of less than 2.5 micrometer;

               b.2.f.2.  Alignment with a precision
finer than ñ 0.25 micrometer (3 sigma); 

               b.2.f.3.  Machine-to-machine overlay
no better than ñ 0.3 micrometer; or

               b.2.f.4.  A light source wavelength
shorter than 400 nm;

          b.2.g.  Electron beam, ion beam or X-ray
equipment for projection image transfer capable
of producing patterns less than 2.5 micrometer;

     Note:  For focused, deflected-beam systems
(direct write systems), see 3B991.b.1.j or b.10.

          b.2.h.  Equipment using "lasers" for direct
write on wafers capable of producing patterns less
than 2.5 micrometer.

     b.3.  Equipment for the assembly of integrated
circuits, as follows:

          b.3.a.  "Stored program controlled" die
bonders having all of the following
characteristics:

               b.3.a.1.  Specially designed for
"hybrid integrated circuits";

               b.3.a.2.  X-Y stage positioning travel
exceeding 37.5 x 37.5 mm; and

               b.3.a.3.  Placement accuracy in the
X-Y plane of finer than ñ 10 micrometer;

          b.3.b.  "Stored program controlled"
equipment for producing multiple bonds in a
single operation (e.g., beam lead bonders, chip
carrier bonders, tape bonders);

          b.3.c.  Semi-automatic or automatic hot
cap sealers, in which the cap is heated locally to a
higher temperature than the body of the package,
specially designed for ceramic microcircuit
packages controlled by 3A001 and that have a
throughput equal to or more than one package per
minute.

     Note:  3B991.b.3 does not control general
purpose resistance type spot welders.

     b.4.  Filters for clean rooms capable of
providing an air environment of 10 or less
particles of 0.3 micrometer or smaller per 0.02832
m3 and filter materials therefor.


3B992  Equipment not controlled by 3B002 for
the inspection or testing of electronic
components and materials, and specially
designed components and accessories therefor.

License Requirements
                                             
     Reason for Control:   AT

Control(s)                              Country Chart

AT applies to entire entry           AT Column 1

License Exceptions

     LVS:     N/A     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: Equipment in number
     Related Controls: See also 3A992.a.
     Related Definitions: N/A
     Items:

a. Equipment specially designed for the inspection
or testing of electron tubes, optical elements and
specially designed components therefor controlled
by 3A001 or 3A991;

b. Equipment specially designed for the inspection
or testing of semiconductor devices, integrated
circuits and "electronic assemblies", as follows,
and systems incorporating or having the
characteristics of such equipment:

     Note: 3B992.b also controls equipment used
or modified for use in the inspection or testing of
other devices, such as imaging devices,
electro-optical devices, acoustic-wave devices.

     b.1.  "Stored program controlled" inspection
equipment for the automatic detection of defects,
errors or contaminants of 0.6 micrometer or less
in or on processed wafers, "substrates", other than
printed circuit boards or chips, using optical
image acquisition techniques for pattern
comparison;

     Note:  3B992.b.1 does not control general
purpose scanning electron microscopes, except
when specially designed and instrumented for
automatic pattern inspection.

     b.2.  Specially designed "stored program
controlled" measuring and analysis equipment, as
follows:

          b.2.a. Specially designed for the
measurement of oxygen or carbon content in
semiconductor materials;

          b.2.b. Equipment for line width
measurement with a resolution of 1 micrometer or
finer;

          b.2.c. Specially designed flatness
measurement instruments capable of measuring
deviations from flatness of 10 micrometer or less
with a resolution of 1 micrometer or finer.

     b.3. "Stored program controlled" wafer
probing equipment having any of the following
characteristics:          

          b.3.a.  Positioning accuracy finer than 3.5
micrometer;

          b.3.b.  Capable of testing devices having
more than 68 terminals; or

          b.3.c.  Capable of testing at a frequency
exceeding 1 GHz;

     b.4.  Test equipment as follows:

          b.4.a. "Stored program controlled"
equipment specially designed for testing discrete
semiconductor devices and unencapsulated dice,
capable of testing at frequencies exceeding 18
GHz;

     Technical Note:  Discrete semiconductor
devices include photocells and solar cells.

          b.4.b. "Stored program controlled"
equipment specially designed for testing
integrated circuits and "electronic assemblies"
thereof, capable of functional testing:

               b.4.b.1.  At a 'pattern rate' exceeding
20 MHz; or

               b.4.b.2. At a 'pattern rate' exceeding
10 MHz but not exceeding 20 MHz and capable of
testing packages of more than 68 terminals.
     
     Notes:   3B992.b.4.b does not control test
equipment specially designed for testing:

      1. Memories;

     2. "Assemblies" or a class of "electronic
assemblies" for home and entertainment
applications; and

     3. Electronic components, "assemblies" and
integrated circuits not controlled by 3A001 or
3A991 provided such test equipment does not
incorporate computing facilities with "user
accessible programmability".

     Technical Note:  For purposes of
3B992.b.4.b, 'pattern rate' is defined as the
maximum frequency of digital operation of a
tester.  It is therefore equivalent to the highest
data rate that a tester can provide in
non-multiplexed mode.  It is also referred to as
test speed, maximum digital frequency or
maximum digital speed.

          b.4.c.  Equipment specially designed for
determining the performance of focal-plane arrays
at wavelengths of more than 1,200 nm, using
"stored program controlled" measurements or
computer aided evaluation and having any of the
following characteristics:

               b.4.c.1. Using scanning light spot
diameters of less than 0.12 mm;

               b.4.c.2. Designed for measuring
photosensitive performance parameters and for
evaluating frequency response, modulation
transfer function, uniformity of responsivity or
noise; or

               b.4.c.3.  Designed for evaluating
arrays capable of creating images with more than
32 x 32 line elements;

     b.5.  Electron beam test systems designed for
operation at 3 keV or below, or "laser" beam
systems, for non-contactive probing of
powered-up semiconductor devices having any  of
the following:

          b.5.a.  Stroboscopic capability with either
beam blanking or detector strobing; 

          b.5.b.  An electron spectrometer for
voltage measurements with a resolution of less
than 0.5 V; or

          b.5.c.  Electrical tests fixtures for
performance analysis of integrated circuits;

     Note:  3B992.b.5 does not control scanning
electron microscopes, except when specially
designed and instrumented for non-contactive
probing of a powered-up semiconductor device.

     b.6. "Stored program controlled"
multifunctional focused ion beam systems
specially designed for manufacturing, repairing,
physical layout analysis and testing of masks or
semiconductor devices and having either of the
following characteristics:

          b.6.a. Target-to-beam position feedback
control precision of 1 micrometer or finer; or

          b.6.b. Digital-to-analog conversion
accuracy exceeding 12 bit;

     b.7.  Particle measuring systems employing
"lasers" designed for measuring particle size and
concentration in air having both of the following
characteristics:

          b.7.a. Capable of measuring particle sizes
of 0.2 micrometer or less at a flow rate of 0.02832
m3 per minute or more; and

          b.7.b. Capable of characterizing Class 10
clean air or better.



                         C.  MATERIALS


3C001  Hetero-epitaxial materials consisting of
a "substrate" having stacked epitaxially grown
multiple layers of any of the following (see List
of Items Controlled).

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     $3000     
     GBS:     N/A     
     CIV:     N/A



List of Items Controlled

     Unit: $ value
     Related Controls:  This entry does not control
     equipment or material whose functionality has
     been unalterably disabled are not controlled.
     Related Definitions: III/V compounds are
     polycrystalline or binary or complex
     monocrystalline products consisting of
     elements of groups IIIA and VA of
     Mendeleyev's periodic classification table
     (e.g., gallium arsenide, gallium-aluminium
     arsenide, indium phosphide).
     Items:

a.  Silicon (Si);

b.  Germanium (Ge); 

c.  Silicon Carbide (SiC); or

d.  "III/V compounds" of gallium or indium.

          
3C002  Resist materials as follows (see List of
Items Controlled)  and "substrates" coated
with the following  resists.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS: $3000
     GBS: Yes for positive resists not optimized
          for photolithography at a wavelength
          of less than 365 nm, provided that
          they are not controlled by 3C002.b
          through .e.
     CIV: Yes for positive resists not optimized
          for photolithography at a wavelength
          of less than 365 nm, provided that
          they are not controlled by 3C002.b
          through .e.

List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: Silylation techniques are
     defined as processes incorporating oxidation
     of the resist surface to enhance performance
     for both wet and dry developing.
     Items:

a.  Positive resists designed for semiconductor
lithography specially adjusted (optimized) for use
at wavelengths below 245 nm;

b.  All resists designed for use with electron
beams or ion beams, with a sensitivity of 0.01
æcoulomb/mm2 or better;

c.  All resists designed for use with X-rays, with
a sensitivity of 2.5 mJ/mm2 or better;

d.  All resists optimized for surface imaging
technologies, including silylated resists;

e.     All resists designed or optimized for use with
imprint lithography equipment specified by
3B001.f.2. that use either a thermal or
photo-curable process.


3C003 Organo-inorganic compounds as follows
(see List of Items Controlled).

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions

     LVS:     $3000     
     GBS:     N/A     
     CIV:     N/A
List of Items Controlled

     Unit: $ value
     Related Controls:  This entry controls only
     compounds whose metallic, partly metallic or
     non-metallic element is directly linked to
     carbon in the organic part of the molecule.
     Related Definition: N/A  
     Items:

a.  Organo-metallic compounds of aluminum,
gallium or indium, having a purity (metal basis)
better than 99.999%;

b. Organo-arsenic, organo-antimony and
organo-phosphorus compounds, having a purity
(inorganic element basis) better than 99.999%.

               
3C004  Hydrides of phosphorus, arsenic or
antimony, having a purity better than
99.999%, even diluted in inert gases or
hydrogen.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  

     LVS:     $3000     
     GBS:     N/A     
     CIV:     N/A

List of Items Controlled

     Unit: $ value
     Related Controls:  N/A
     Related Definition: N/A 
     Items:

The list of items controlled is contained in the
ECCN heading.

Note:  This entry does not control hydrides
containing 20% molar or more of inert gases or
hydrogen.


3C005  Silicon carbide (SiC), gallium nitride
(GaN), aluminum nitride (AlN) or aluminum
gallium nitride (AlGaN) "substrates", or
ingots, boules, or other preforms of those
materials, having resistivities greater than
10,000 ohm-cm at 20§C.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  
     LVS:     $3000     
     GBS:     Yes
     CIV:     Yes

List of Items Controlled

     Unit: $ value
     Related Controls:  See ECCN 3E001 for
     related development and production
     technology, and ECCN 3B991.b.1.b for
     related production equipment. 
     Related Definition: N/A 
     Items:

The list of items controlled is contained in the
ECCN heading.


3C006     "Substrates" specified in 3C005 with at
least one epitaxial layer of silicon carbide,
gallium nitride, aluminum nitride or aluminum
gallium nitride.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 2

AT applies to entire entry          AT Column 1

License Exceptions  
     LVS:     $3000     
     GBS:     Yes
     CIV:     Yes

List of Items Controlled

     Unit: $ value
     Related Controls: See ECCN 3D001 for
     related "development" or "production"
     "software", ECCN 3E001 for related
     "development" and "production"
     "technology", and ECCN 3B991.b.1.b for
     related "production" equipment. 
     Related Definition: N/A 
     Items:

The list of items controlled is contained in the
ECCN heading.


3C992 Positive resists designed for
semiconductor lithography specially adjusted
(optimized) for use at wavelengths between 370
and 245 nm.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart

AT applies to entire entry          AT Column 1

License Exceptions

     LVS: N/A
     GBS:  N/A
     CIV:  N/A

List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.



                          D.  SOFTWARE

          
3D001 "Software" specially designed for the
"development" or "production" of equipment
controlled by 3A001.b to 3A002.g or 3B (except
3B991 and 3B992).

License Requirements

     Reason for Control:   NS, AT
     
Control(s)                              Country Chart
          
NS applies to "software"          NS Column 1
for equipment controlled 
by 3A001.b to 3A001.f, 
3A002, and 3B

AT applies to entire entry          AT Column 1

     License Requirement Notes:  See 743.1 of
the EAR for reporting requirements for exports
under License Exceptions.

License Exceptions

     CIV:     N/A
     TSR: Yes, except for "software" specially
          designed for the "development" or
          "production" of Traveling Wave
          Tube Amplifiers described in
          3A001.b.8 having operating
          frequencies exceeding 18 GHz.

List of Items Controlled

     Unit: $ value
     Related Controls: "Software" specially
     designed for the "development" or
     "production" of the following equipment is
     under the export licensing authority of the
     Department of State, Directorate of Defense
     Trade Controls (22 CFR part 121): 1.) When
     operating at frequencies higher than 31.8 GHz
     and "space qualified": Helix tubes (traveling
     wave tubes (TWT)) defined in
     3A001.b.1.a.4.c; microwave solid state
     amplifiers defined in 3A001.b.4.b; and
     traveling wave tube amplifiers (TWTA)
     defined in 3A001.b.8; 2.)  "Space qualified"
     solar cells, coverglass-interconnect-cells or
     covered-interconnect-cells (CIC) assemblies,
     solar arrays, and/or solar panels, with a
     minimum average efficiency of 31% or
     greater at an operating temperature of 301§K
     (28§C) under simulated 'AM0' illumination
     with an irradiance of 1,367 Watts per square
     meter (W/m2), and associated solar
     concentrators, power conditioners, and/or
     controllers, bearing and power transfer
     assemblies, and deployment
     hardware/systems. 3.) "Space qualified"
     atomic frequency standards defined in
     3A002.g.2. See also 3D101.
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.
                                 



3D002 "Software" specially designed for the
"use" of equipment controlled by 3B001.a to .f,
or 3B002.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     Yes     

List of Items Controlled

     Unit: $ value
     Related Controls: Also see 3D991.
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3D003 'Physics-based' simulation "software"
specially designed for the "development" of
lithographic, etching or deposition processes
for translating masking patterns into specific
topographical patterns in conductors,
dielectrics or semiconductor materials.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 1

AT applies to entire entry          AT Column 1

License Exceptions

     CIV:     N/A
     TSR:     Yes     
                                        
List of Items Controlled

     Unit: $ value
     Related Controls:     N/A
     Related Definitions:  1.)  Libraries, design
     attributes or associated data for the design of
     semiconductor devices or integrated circuits
     are considered as "technology".  2.)
     'Physics-based' in 3D003 means using
     computations to determine a sequence of
     physical cause and effect events based on
     physical properties (e.g., temperature,
     pressure, diffusion constants and
     semiconductor materials properties).
     Items:
     
The list of items controlled is contained in the
ECCN heading.


3D004     "Software" specially designed for the
"development" of equipment controlled by
3A003.

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart

NS applies to entire entry           NS Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     Yes     

List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3D101 "Software" specially designed or
modified for the "use" of equipment controlled
by 3A101.b.

License Requirements

     Reason for Control:   MT, AT

Control(s)                              Country Chart
     
MT applies to entire entry           MT Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3D980 "Software" specially designed for the
"development", "production", or "use" of 
items controlled by 3A980 and 3A981.

License Requirements

     Reason for Control:   CC, AT

Control(s)                              Country Chart
     
CC applies to entire entry           CC Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A
     
List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3D991 "Software" specially designed for the
"development", "production", or "use" of
electronic devices or components controlled by
3A991, general purpose electronic equipment
controlled by 3A992, or manufacturing and
test equipment controlled by 3B991 and 3B992;
or "software" specially designed for the "use"
of equipment controlled by 3B001.g and .h.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart
     
AT applies to entire entry           AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit: $ value
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.



                         E.  TECHNOLOGY


3E001 "Technology" according to the General
Technology Note for the "development" or
"production" of equipment or materials
controlled by 3A (except 3A292, 3A980, 3A981,
3A991 3A992, or 3A999), 3B (except 3B991 or
3B992) or 3C (except 3C992).

License Requirements

     Reason for Control:  NS, MT, NP, AT

Control(s)                              Country Chart

NS applies to "technology"    NS Column 1
for items controlled by
3A001, 3A002, 3B001,
3B002, or 3C001 to 3C006

MT applies to "technology"     MT Column 1 
for equipment controlled by
3A001 or 3A101 for MT
reasons

NP applies to "technology"         NP Column 1
for equipment controlled by
3A001, 3A201, or 3A225 to
3A233 for NP reasons

AT applies to entire entry         AT Column 1

     License Requirement Note:  See 743.1 of
the EAR for reporting requirements for exports
under License Exceptions.

License Exceptions  

     CIV:    N/A
     TSR: Yes, except N/A for MT, and
     "technology" specially designed for the
     "development" or "production" of: (a)
     Traveling Wave Tube Amplifiers described in
     3A001.b.8, having operating frequencies
     exceeding 19 Ghz; and (b) solar cells,
     coverglass-interconnect-cells or covered-
     interconnect-cells (CIC) assemblies, solar
     arrays and/or solar panels, which are "space
     qualified," having a minimum average
     efficiency exceeding 20% but less than 31%
     described in 3A001.e.4.

List of Items Controlled

     Unit:  N/A
     Related Controls: 1.) See also 3E101 and
     3E201. 2.)"Technology" according to the
     General Technology Note for the
     "development" or "production" of the
     following commodities is under the export
     licensing authority of the Department of State,
     Directorate of Defense Trade Controls
     (22CFR part 121): (a) When operating at
     frequencies higher than 31.8 GHz and "space
     qualified": helix tubes (traveling wave tubes
     (TWT)) defined in 3A001.b.1.a.4.c;
     microwave solid state amplifiers defined in
     3A001.b.4.b; or traveling wave tube
     amplifiers (TWTA) defined in 3A001.b.8; (b) 
     "Space qualified"    solar cells, coverglass-
     interconnect-cells or covered-interconnect-
     cells (CIC) assemblies, solar arrays, and/or
     solar panels, with a minimum average
     efficiency of 31% or greater at an operating
     temperature of 301§K (28§C) under simulated
     'AM0' illumination with an irradiance of
     1,367 Watts per square meter (W/m2), and
     associated solar concentrators, power
     conditioners, and/or controllers, bearing and
     power transfer assemblies, and deployment
     hardware/systems. and (c) "Space qualified"
     atomic frequency standards defined in
     3A002.g.2.
     Related Definition:  N/A
     Items:

The list of items controlled is contained in the
ECCN heading.
     
Note 1: 3E001 does not control "technology" for
the "production" of equipment or components
controlled by 3A003.
     
Note 2:  3E001 does not control "technology" for
the "development" or "production" of integrated
circuits controlled by 3A001.a.3 to a.12, having
all of the following:

     a) Using "technology" of 0.5  m or more;
and

     b) Not incorporating multi-layer structures. 

          Technical Note: Multi-layer structures in
Note 2 of 3E001 do not include devices
incorporating a maximum of three metal layers
and three polysilicon layers.     


3E002 "Technology" according to the General
Technology Note other than that controlled in
3E001 for the "development" or "production"
of a "microprocessor microcircuit", "micro-
computer microcircuit" and microcontroller
microcircuit core, having  an arithmetic logic
unit with an access width of 32 bits or more
and any of the following features or
characteristics (see List of Items Controlled).

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV: Yes, for deemed exports, as described
          in 734.2(b)(2)(ii) of the EAR, of
          "technology" for the "development"
          or "production" of general purpose
          microprocessors with a  vector
          processor unit with operand length of
          64-bit or less, 64-bit floating
          operations not exceeding 32
          GFLOPS, or 16-bit or more
          floating-point operations not
          exceeding 32 GMACS (billions of
          16-bit fixed-point multiply-
          accumulate operations per second). 
          Deemed exports under License
          Exception CIV are subject to a
          Foreign National Review (FNR)
          requirement, see 740.5 of the EAR
          for more information about the FNR. 
          License Exception CIV does not
          apply to ECCN 3E002 technology
          also required for the development or
          production of items controlled under
          ECCNs beginning with  3A, 3B, or
          3C, or to ECCN 3E002 technology
          also controlled under ECCN 3E003.
     TSR:     Yes     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

a.      A 'vector processor unit' designed to perform
more than two calculations on floating-point
vectors (one dimensional arrays of 32-bit or larger
numbers) simultaneously;

     Technical Note:  A 'vector processor unit' is
a processor element with built-in instructions that
perform multiple calculations on floating-point
vectors (one-dimensional arrays of 32-bit or
larger numbers) simultaneously, having at least
one vector arithmetic logic unit.

b.     Designed to perform more than two 64-bit or
larger floating-point operation results per cycle; or

c.     Designed to perform more than four 16-bit
fixed-point multiply-accumulate results per cycle
(e.g., digital manipulation of analog information
that has been previously converted into digital
form, also known as digital "signal processing").

     Note:     3E002.c does not control
"technology" for multimedia extensions.

     Notes:

          1.     3E002 does not control "technology"
for the "development" or "production" of 
microprocessor cores, having all of the following:
          
               a. Using "technology" at or above
0.130  m; and 

               b. Incorporating multi-layer
structures with five or fewer metal layers. 

          2.     3E002 includes "technology" for
digital signal processors and digital array
processors.


3E003 Other "technology" for the
"development" or "production" of the
following (see List of Items Controlled).

License Requirements

     Reason for Control:   NS, AT

Control(s)                              Country Chart
     
NS applies to entire entry           NS Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     Yes, except .f and .g     

List of Items Controlled

     Unit:  N/A
     Related Controls: 1) Technology for the
     "development" or "production" of "space
     qualified" electronic vacuum tubes operating
     at frequencies of 31.8 GHz or higher,
     described in 3E003.g,  is under the export
     license authority of the Department of State,
     Directorate of Defense Trade Controls (22
     CFR part 121); 2) See 3E001 for silicon-on-
     insulation (SOI) technology for the
     "development" or "production" related to
     radiation hardening of integrated circuits.
     Related Definitions: N/A
     Items:

a.  Vacuum microelectronic devices;

b.  Hetero-structure semiconductor devices such
as high electron mobility transistors (HEMT),
hetero-bipolar transistors (HBT), quantum well
and super lattice devices;

     Note:     3E003.b does not control
"technology" for high electron mobility
transistors (HEMT) operating at frequencies
lower than 31.8 GHz and hetero-junction bipolar
transistors (HBT) operating at frequencies lower
than 31.8 GHz.

c.  "Superconductive" electronic devices;

d.  Substrates of films of diamond for electronic
components;

e.  Substrates of silicon-on-insulator (SOI) for
integrated circuits in which the insulator is silicon
dioxide;

f.  Substrates of silicon carbide for electronic
components;

g.  Electronic vacuum tubes operating at
frequencies of 31.8 GHz or higher.          
     

3E101  "Technology" according to the General
Technology Note for the "use" of equipment or
"software" controlled by 3A001.a.1 or .2,
3A101, or 3D101.

License Requirements

     Reason for Control:   MT, AT

Control(s)                              Country Chart
     
MT applies to entire entry           MT Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3E102 "Technology" according to the General
Technology Note for the "development" of
"software" controlled by 3D101.

License Requirements

     Reason for Control:   MT, AT

Control(s)                              Country Chart
     
MT applies to entire entry           MT Column 1

AT applies to entire entry          AT Column 1
     
License Exceptions

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A

     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3E201  "Technology" according to the General
Technology Note for the "use" of equipment
controlled by 3A001.e.2 or .e.3, 3A201 or
3A225 to 3A233.

License Requirements

     Reason for Control:  NP, AT

Control(s)                              Country Chart

NP applies to "technology"         NP Column 1
for equipment controlled by
3A001.e.2, or .e.3, 3A201 or
3A225 to 3A233 for NP
reasons

AT applies to entire entry         AT Column 1

License Exceptions

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


3E292 "Technology" according to the General
Technology Note for the "development",
"production", or "use" of equipment controlled
by 3A292.

License Requirements

     Reason for Control:   NP, AT

Control(s)                              Country Chart

NP applies to entire entry           NP Column 2

AT applies to entire entry          AT Column 1

License Exceptions

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.

     
3E980 "Technology" specially designed for
"development", "production", or "use"of items
controlled by 3A980 and 3A981.

License Requirements

     Reason for Control:   CC, AT


Control(s)                              Country Chart

CC applies to entire entry           CC Column 1

AT applies to entire entry          AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.

     
3E991  "Technology" for the "development",
"production", or "use" of electronic devices or
components controlled by 3A991, general
purpose electronic equipment controlled by
3A992, or manufacturing and test equipment
controlled by 3B991 or 3B992, or materials
controlled by 3C992.

License Requirements

     Reason for Control:   AT

Control(s)                              Country Chart
     
AT applies to entire entry           AT Column 1

License Exceptions  

     CIV:     N/A
     TSR:     N/A     

List of Items Controlled

     Unit:  N/A
     Related Controls: N/A
     Related Definitions: N/A
     Items:

The list of items controlled is contained in the
ECCN heading.


EAR99  Items subject to the EAR that are not
elsewhere specified in this CCL Category or in
any other category in the CCL are designated
by the number EAR99.