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Ӏ  0   35$  Ӏ  1    T@X4 <DL!T$&)\+- 0XTӀThenumbersinparenthesisrefertotheNotesfollowingthisTable. dTable_A&0 d d d 5u{74Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a) 5u{75Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a) 5u{76Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)yz{|}~ 5u{77Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)qrstuvwx 5u{78Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)ijklmnop 5u{79Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)abcdefgh 5u{80Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)YZ[\]^_` 5u{81Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)QRSTUVWX CyParagraph1. a. i. (1) (a) (i) 1) a)I.A.1.a.(1)(a)i)a)IJKLMNOP 5u{82Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)ABCDEFGH 5u{83Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)9:;<=>?@ 5u{84Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)12345678 5u{85Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a))*+,-./0 5u{86Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)!"#$%&'( 5u{87Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a) 5u{88Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a) 5u{89Right-Aligned Paragraph NumbersI.A.1.a.(1)(a)i)a)3|j<6X9`(Courieroman RegularXx6X@`7X@\  `*Times New RomanTTarA\  PP( T$  (hH  Z 6Times New Roman Regulartz&X^J^XD T!   ݛ7XXdd7XXXX   `     h      p    `     h      p BillingCode:351033PDEPARTMENTOFCOMMERCEBureauofExportAdministration15CFRParts740,743and774[DocketNo.990625176917601]RIN:0694AB86RevisionstotheExportAdministrationRegulations;CommerceControlList:RevisiontoCategories1,2,3,4,5,6,7,and9BasedonWassenaarArrangementReviewAGENCY:BureauofExportAdministration,Commerce  ACTION:Finalrule.SUMMARY:TheBureauofExportAdministration(BXA)maintainstheCommerceControl -`'* List(CCL),whichidentifiesthoseitemssubjecttoDepartmentofCommerceexportcontrols.ThisfinalrulerevisescertainentriescontrolledfornationalsecurityreasonsinCategories1,2,3,4,5,6,7,and9toconformwithchangesintheWassenaarArrangement'sListofDualUseGoodsandTechnologiesmaintainedandagreedtobygovernmentsparticipatingintheWassenaarArrangementonExportControlsforConventionalArmsandDualUseGoodsandTechnologies(WassenaarArrangement).TheWassenaarArrangementcontrolsstrategicitemswiththeobjectiveofimprovingregionalandinternationalsecurityandstability.DATES:Thisruleiseffective(DATEOFPUBLICATION).󀜛 h FORFURTHERINFORMATIONCONTACT:Forquestionsoftechnicalnature,thefollowingpersonsintheOfficeofStrategicTradeareavailable:Category1:RobertTeer(202)4824749Category2:TanyaMottley(202)4821837Category3:HectorRivera(202)4825534Category4:TanyaMottley(202)4821837Category5(Telecommunications):TonyKoo(202)4823206Category6:ChrisCostanzo(202)4820718Category7:HerbWahler(202)4825250Category9:GeneChristiansen(202)4822984 -`'* SUPPLEMENTARYINFORMATION:Background H МInJuly1996,theUnitedStatesandthirty-twoothercountriesgavefinalapprovaltotheestablishmentofanewmultilateralexportcontrolarrangement,calledtheWassenaarArrangementonExportControlsforConventionalArmsandDual-UseGoodsandTechnologies(WassenaarArrangement).TheWassenaarArrangementcontributestoregionalandinternationalsecurityandstabilitybypromotingtransparencyandgreaterresponsibilityintransfersofconventionalarmsanddual-usegoodsandtechnologies,thuspreventingdestabilizingaccumulationsofsuchitems.Participatingstateshavecommittedtoexchangeinformationonexportsofdual-usegoodsandtechnologiestononparticipatingstatesforthepurposesofenhancingtransparencyandassistingindevelopingcommonunderstandingsoftherisksassociatedwiththetransfersoftheseitems.OnJanuary15,1998,theBureauofExportAdministration(BXA)publishedaninterimrule(63FR2452)fulfillingU.S.commitmentstotheWassenaarArrangementbyimplementingtheWassenaarArrangementlistofdualuseitemsandimposingreportingrequirementsforexportsofcertainitemscontrolledundertheWassenaarArrangement.ThisfinalrulerevisesanumberofnationalsecuritycontrolledentriesontheCommerceControlList(CCL)toconformwithrecentchangesintheWassenaarListofDualUseGoodsandTechnologies.Specifically,thisrulemakesthefollowingamendments: -`'* Category1Materials,Chemicals,Microorganisms,andToxins:1C004Amendedbymodifyingcontrolsontheelasticlimitfrom1,250MPato880MPa(1C004.b).1C006Amendedbyremovingnationalsecuritycontrolsonhydrocarbonoils(1C006.a.1).Category2MaterialProcessing:2B001Amendedbymodifyingthenoteto2B001.ctoclarifythatcertaintoolorcuttergrindingmachinesarenotcontrolledfornationalsecurityreasons(decontrolnote2B001.c).Inaddition,therelatedcontrolssectionhasbeenamendedbyaddingareferencetoreferto1B101.dforcuttingequipmentdesignedormodifiedforremovingprepregsandpreformscontrolledby9A110(2B001,relatedcontrols).2B004Amendedby1)revisingtheentryheadingbyremovingnationalsecuritycontrolsondies,moldsandcontrolsspeciallydesignedforcertainhotisostaticpresses(2B004,heading);and2)revisingtherelatedcontrolssectiontobyaddingtwonewreferences,asfollows:a)forspeciallydesigneddies,moldsandtoolingreferto1B001,9B009,andML18oftheMunitionsList;andb)inaddition,see1B101.d,2B104,and2B204forcontrolsondies,moldsandtooling(2B004,relatedcontrols).̜ -`'* 2B005Amendedbycorrectinganeditorialerror(2B005.c).2D001Amendedbymodifyingtheentryheadingtoread"software",otherthanthatcontrolledby2D002,speciallydesignedormodifiedforthe"development","production"or"useofequipmentcontrolledby2A001or2B001to2B009(2D001,heading).Inaddition,therelatedcontrolssectionisamendedbyclarifyingthat2D001controlssoftwarenotcoveredby2D101,thatarespeciallydesignedormodifiedforthecontrollersofflowformingmachinesdescribedin2B109(2D001,relatedcontrols).2E003Amendedby1)revisingtherelatedcontrolssectionbyaddingareferencetoreferto2E001,2E002and2E101for development, productionand usetechnologyforequipmentthataredesignedormodifiedfordensificationofcarboncarboncomposites,structuralcompositerocketnozzlesandreentryvehiclenosetips(2E003,relatedcontrols);and2)revisingtheDepositionTechniquesTableby1)addingnew"resultantcoatings"technologiesfordiamond,boronnitride,andberyllium;and2)updatingthe"sensorwindowmaterials"notebyincludingdiamond,galliumphosphide,sapphire,zirconiumfluorideandhafniumfluorideandbyremovingpotassiumiodide,potassiumfluoride,thalliumbromideandthalliumchlorobromide.Category3Electronics:3A001Amendedbyincreasingthegatecountfrom300to3,000fordigitalintegratedcircuits(3A001.a.11). -`'* Ї3A002Amendedby:1)liberalizingcontrolsfordigitalvideomagnetictaperecordersfrom180to360Mbits/s(3A002.a.2);2)modifyingthenoteto3A002.a.2byclarifyingthat3A001.a.2doesnotcontroldigitalvideomagnetictaperecordersspeciallydesignedfortelevisionrecordingusingasignalformat,whichmayincludeacompressedsignalformat,standardizedorrecommendedbytheITU,theIEC,theSMPTE,theEBUortheIEEEforciviltelevisionapplications(decontrolnoteto3A002.a.2);and3)modifyingthenoteto3A002.c.2byclarifyingthat3A002doesnotcontrolthose"dynamicsignalanalyzers"usingonlyconstantpercentagebandwidthfilters(alsoknownasoctaveorfractionaloctavefilters)(clarificationnoteto3A002.c.2).3B001Amendedby:1)addingcontrolsformolecularbeamepitaxialgrowthequipmentusingsolidsources(3B001.a.3);2)liberalizingcontrolsforionimplantatersandaddinganewterm"beamenergy"(3B001.b.1andb.2);and3)clarifyinglithographyequipmentcontrolstoincludedirectsteponwaferequipmentorstepandscan(scanner)equipment,relaxingcontrolsonthelightsourcewavelengthoflithographyequipmentfrom400nmto350nmandrelaxingcontrolsonminimumresolvablefeaturesizeonlithographyequipmentfrom0.7to0.5micronsorless(3B001.f).3C002Amendedbyrelaxingwavelengthcontrolsforpositiveresistsforsemiconductorlithographyfrom370nmto350nm(3C002.a).3E001Amendedbyrevisingthenoteto3E001toindicatethat3E001doesnotcontrol -`'* integratedcircuitsusingtechnologyof0.7micronsormore(decontrolnoteto3E001).3E002Amendedbyaddingnewcontrolsforsubstratesofsilicononinsulator(SOI)forintegratedcircuitsinwhichtheinsulatorissilicondioxide(3E002.e)andsubstratesofsiliconcarbideforelectroniccomponents(3E002.f).Inadditiontherelatedcontrolssectionisamendedbyaddingareferencetoreferto3E001forsilicononinsulationtechnologyforthe developmentor productionrelatedtoradiationhardeningofintegratedcircuits(3E002,relatedcontrols).Category4Computers:4A003Amendedbyremovingcontrolsfor4A003.f(Equipmentcontaining"terminalinterfaceequipment"exceedingthelimitsin5A001.b.3).Thisrevisionisconsistentwithconsequentialchangesto5A001(i.e.,theremovalofequipmentcontaining"networkaccesscontrollers"or"communicationchannelcontrollers".Inaddition,toavoidpossibleconfusion,thenoteto4A003.ghasbeenamendedtoclarifythat"networkaccesscontrollers"or"communicationchannelcontrollers"arenotcontrolledbythisentry(decontrolnoteto4A003.g).TabletoCategory4AmendedbyrevisingNote5toclarifythataggregationforCTPvaluesdonotapplyto"electronicassemblies"describedin4A003.c(technicalnote5onCTP)Category5Telecommunications,PartI: -`'* ЇSeveralsectionsofPartI,Telecommunicationshavebeenremovedcreatingasignificantnumberofchangestothecontrolsontelecommunicationequipment.Themajorityofchangesareidentifiedinthefollowingentries.Note1toCategory5Part1Telecommunications:Amendedbyremovingthephrase"materials"(Note1),as5C001wasdeletedfromnationalsecuritycontrols.5A001Amendedby:  1)removingcontrolsontelecommunicationsequipmentorsystemscontaininganyofthefollowing:   ` employingdigitaltechniques(5A001.b.1);   ` containing"networkaccesscontrollers"or"communicationchannelcontrollers"(5A001.b.3);   ` employingalaser(5A001.b.4);   ` beingradioequipmentoperatingatinputoroutputfrequenciesexceeding31GHz(5A001.b.5);   ` beingradioequipmentemployingQuadratureAmplitudeModulation(QAM)techniquesorotherdigitalmodulationtechniquesandhavingaspectralefficiencyexceeding3bit/sec/Hz(5A001.b.6);  2)removingcontrolson"storedprogramcontrolled"switchingequipmentcontaininganyofthefollowing(5A001.c): -`'*    ` commonchannelsignalling(5A001.c.1);   ` dynamicadaptiverouting(5A001.c.2);   ` beingpacketswitches,circuitswitchesandrouters(5A001.c.3);   ` opticalswitches(5A001.c.4);   ` employing"AsynchronousTransferMode"(ATM)techniques(5A001.c.5);  3)modifyingcontrolsforopticalfibercommunicationcables(5A001.d);removingcontrolsonopticalfibercablesandliberalizingcontrolsonopticalfibersfrom50mto500m(5A001.d.1);andremovingcontrolsforsinglemodeoperation(5A001.d.1.a);and  4)addingaNotaBeneto5A001.d.2clarifyingthatyoushouldreview8A002.a.3forunderwaterumbilicalcablesandconnectorstherefor.5B001Amendedby:1)revisingtheentryheadingtoread"test,inspectionandproductionequipment,seelistofitemscontrolled";2)redesignatingtheformerentryheadingas5B001.aandbyremovingtheterm"materials";(3)addinganoteto5B001.aspecifyingthat5B001.adoesnotcontrolopticalfibercharacterizationequipmentnotusingsemiconductor"lasers",formerlydescribedintheRelatedControlssection.Theformatchangestotheentryheadingandto5B001.aareconsistentwiththeformatrevisionsagreedtobytheWassenaarArrangement.Inaddition,5B001isamendedbycreatinganew5B001.b.Thisnewparagraphbaddsnationalsecuritycontrolsforequipmentandspeciallydesignedcomponentsoraccessoriestherefor,speciallydesignedforthe"development"ofcertaintelecommunicationtransmissionor"stored -`'* programcontrolled"switchingequipment.5C001Amendedbyremovingnationalsecuritycontrolsforpreformsofglassorofanyothermaterialoptimizedforthemanufacturerofopticalfiberscontrolledby5A001.d.5D001Amendedby:1)removingcontrolsforsoftwarefortheuseofdigitalcellularradioequipmentorsystems(5D001.c.1)and2)creatinganew5D001.d.Thisnewparagraphdaddsnationalsecuritycontrolsfor"software"speciallydesignedormodifiedforthe"development"ofcertaintelecommunicationtransmissionor"storedprogramcontrolled"switchingequipment(5D001.d).5E001Amendedby:1)removingnationalsecuritycontrolsoncertaintechnologyforthe"development"or"use"oflasercommunicationtechniques(5E001.b.4,5E001.b.6,5E001.b.8,and5E001.b.9)and2)creatinganew5E001.c.Thisnewparagraphcaddsnationalsecuritycontrolsfor"technology"accordingtotheGeneralTechnologyNoteforthe"development"or"production"ofcertaintelecommunicationtransmissionor"storedprogramcontrolled"equipmentfunctionsorfeatures(5E001.c).Category6SensorsandLasers:6A003Amendedby:1)modifyingthetermintensifierstoreadintensifiertubes(6A003.b.3); -`'* and2)addinganoteto6A003.b.4clarifyingthat6A003.b.4doesnotcontrolimagingcamerasincorporatinglinear"focalplanearrays"withtwelveelementsorfewer,notemployingtimedelayandintegrationwithintheelement,designedfora)industrialorcivilianintrusionalarm,trafficorindustrialmovementcontrolorcountingsystems;b)industrialequipmentusedforinspectionormonitoringofheatflowsinbuildings,equipmentorindustrialprocesses;c)industrialequipmentusedforinspection,sortingoranalysisofthepropertiesofmaterials;d)equipmentspeciallydesignedforlaboratoryuse;ore)medicalequipment(decontrolnoteto6A003.b.4).6A005Amendedby:1)addinganoteforexcimerlasers,speciallydesignedforlithographyequipment(relatedcontrols);and2)addinganewcontrolforindividualsingletransversemodesemiconductorlasers(6A005.b.1).6C002Amendedbyrelaxingcontrolsonzinccadmiumtelluride(6C005.b).Category7NavigationandAvionics:NotestoCategory7AAmendedbyrevisingthe"NotetoCategory7A"as"NotaBene(N.B.)2"andbyrevisingtheexistingNotaBeneas"N.B.1"(notestoCategory7A).Category9PropulsionSystems,SpaceVehiclesandRelatedEquipment: -`'* ParentheticalnotetoCategory9AAmendedbyredesignatingtheparentheticalphaseasaNotaBene(N.B.).̀Itemsplacedundercontrolwillbesubjecttobothnationalsecurity(NS)andantiterrorism(AT)controls.(seeECCN3E002.eandf.)TheseactionsaretakeninconsultationwiththeDepartmentsofStateandDefenseandpursuanttoagreementsreachedintheWassenaarArrangement.Allitemsremovedfromnationalsecurity(NS)controlsasaresultoftheWassenaarListofDualUseGoodsandTechnologieswillcontinuetobecontrolledforantiterrorism(AT)reasons.BXAiscontinuingacomprehensivereviewoftheCommerceControlList(CCL)toaccountforitemscontrolledbytheNuclearSuppliersGroup(NSG),theMissileTechnologyControlRegime(MTCR),andtheAustraliaGroup(AG)andtocorrecterrorsunavoidablyreprintedinthisversionoftheCCL.ThereviewwillbebasedinlargepartuponthecommentsreceivedanduponongoingeffortstoharmonizetheCCLwiththeEU'scontrollist.AlthoughtheExportAdministrationAct(EAA)expiredonAugust20,1994,thePresidentinvokedtheInternationalEmergencyEconomicPowersActandcontinuedineffect,totheextentpermittedbylaw,theprovisionsoftheEAAandtheEARinExecutiveOrder12924ofAugust19,1994,asextendedbythePresident'snoticesofAugust15,1995(60FR42767),August14,1996(61FR42527),August13,1997(62FR43629),andAugust13,1998(63FR44121). -`'* ЇSavingClauseShipmentsofitemsremovedfromeligibilityforexportorreexportunderaparticularLicenseExceptionauthorizationorthedesignatorNLR,asaresultofthisregulatoryaction,maycontinuetobeexportedorreexportedunderthatLicenseExceptionauthorizationordesignatoruntil[30DAYSFROMDATEOFPUBLICATION].Inaddition,thisrulerevisesthenumberingandstructureofcertainentriesontheCommerceControlList.Foritemsundersuchentriesandfor[90DAYSFROMDATEOFPUBLICATION],BXAwillacceptlicenseapplicationsforitemsdescribedeitherbytheentriesineffectimmediatelybefore[DATEOFPUBLICATION]ortheentriesdescribedinthisrule.RulemakingRequirements  1.ThisinterimrulehasbeendeterminedtobenotsignificantforpurposesofE.O.12866.  2.Notwithstandinganyotherprovisionoflaw,nopersonisrequiredtorespondto,norshallanypersonbesubjecttoapenaltyforfailuretocomplywithacollectionofinformation,subjecttotherequirementsofthePaperworkReductionAct(PRA),unlessthatcollectionofinformationdisplaysacurrentlyvalidOMBControlNumber.ThisruleinvolvescollectionsofinformationsubjecttothePaperworkReductionActof1995(44U.S.C.3501etseq.)These +%( collectionshasbeenapprovedbytheOfficeofManagementandBudgetundercontrolnumbers -`'* 06940073,06940086,and06940088.  3.ThisruledoesnotcontainpolicieswithFederalismimplicationssufficienttowarrantpreparationofaFederalismassessmentunderExecutiveOrder12612.  4.TheprovisionsoftheAdministrativeProcedureAct(5U.S.C.553)requiringnoticeofproposedrulemaking,theopportunityforpublicparticipation,andadelayineffectivedate,areinapplicablebecausethisregulationinvolvesamilitaryandforeignaffairsfunctionoftheUnitedStates(Sec.5U.S.C.553(a)(1)).Further,nootherlawrequiresthatanoticeofproposedrulemakingandanopportunityforpubliccommentbegivenforthisinterimrule.Becauseanoticeofproposedrulemakingandanopportunityforpubliccommentarenotrequiredtobegivenforthisruleunder5U.S.C.orbyanyotherlaw,theanalyticalrequirementsoftheRegulatoryFlexibilityAct(5U.S.C.601etseq.)arenotapplicable.  ListofSubjects15CFRpart740  Administrativepracticeandprocedure,Exports,Foreigntrade,Reportingandrecordkeepingrequirements.   ((!$ 15CFRpart743  Administrativepracticeandprocedure,Exports,Foreigntrade,Reportingand -`'* recordkeepingrequirements.   h   15CFRpart774  Exports,ForeignTrade.  Accordingly,parts740,743and774oftheExportAdministrationRegulations(15CFRparts730through799)areamendedasfollows:  1.Theauthoritycitationforpart740isrevisedtoreadasfollows:  Authority:50U.S.C.app.2401etseq.;50U.S.C.1701etseq.;E.O.12924,59FR ( 43437,3CFR,1994Comp.,p.917;E.O.13026,61FR58767,3CFR,1996Comp.,p.228andofNoticeofAugust13,1998(63FR44121,3CFR1998comp.,p.294.  2.Theauthoritycitationforpart743isrevisedtoreadasfollows:    Authority:50U.S.C.app.2401etseq.;50U.S.C.1701etseq.;E.O.12924,59FR43437, h$  3CFR,1994Comp.,p.917(1995);NoticeofAugust13,1998,63FR44121,3CFR,1998Comp.,p.294.  3.XXXXTheauthoritycitationforpart774continuestoreadasfollows: -`'* Ї  Authority:50U.S.C.app.2401etseq.;50U.S.C.1701etseq.;10U.S.C.720;10U.S.C. h 7430(e);18U.S.C.2510etseq.;22U.S.C.287c;22U.S.C.3201etseq.;22U.S.C.6004;30 H U.S.C.185(s),185(u);42U.S.C.2139a;42U.S.C.6212;43U.S.C.1354;46U.S.C.app.466c;50U.S.C.app.5;E.O.12924,59FR43437,3CFR,1994Comp.,p.917;NoticeofAugust15,1995,60FR42767,3CFR,1995Comp.,p.501;NoticeofAugust14,1996,61FR42527,3CFR,1996Comp.,p.298;NoticeofAugust13,1997,62FR43629,3CFR,1997Comp.p.306;NoticeofAugust13,1998,63FR44121,3CFR,1998Comp.p.294.#XXXXM# @  PART740[AMENDED]  4.Section740.11isamended:   ` a.Byrevisingparagraph(a)(2);   ` b.ByrevisingSupplementNo.1,asfollows:740.11Governments,internationalorganizations,andinternationalinspectionsundertheChemicalWeaponsConvention(GOV).@$*****(a)***  (2)Thefollowingitemscontrolledfornationalsecurity(NS)reasonsunderExportControlClassificationNumbers(ECCNs)identifiedontheCommerceControlListmaynotbeexportedorreexportedunderthisLicenseExceptiontodestinationsotherthanAustria,Belgium, -`'* Canada,Denmark,Finland,France,Germany,Greece,Ireland,Italy,Luxembourg,theNetherlands,Portugal,Spain,Sweden,andtheUnitedKingdom:1C001,1C012,5A001.b.4,6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.e.1,6A001.a.2.e.2,6A002.a.1.c,6A008.l.3.,6B008,8A001.b.,8A001.d.,8A002.o.3.b.,9A011;and   ` (i)"Composite"structuresorlaminatescontrolledby1A002.a.,havinganorganic"matrix"andmadefrommaterialslistedunder1C010.c.or1C010.d.;and   ` (ii) "Digital"computerscontrolledby4A003.b.andhavingaCTPexceeding @  10,000MTOPS;and   ` (iii)"Electronicassemblies"controlledby4A003.c.andcapableofenhancingperformancebyaggregationof"computingelements"sothattheCTPoftheaggregationexceeds10,000MTOPS;and   ` (iv) Processingequipmentcontrolledby6A001.a.2.c.andspeciallydesigned  forrealtimeapplicationwithtowedacoustichydrophonearrays;and   ` (v) Bottomorbaycablesystemscontrolledby6A001.a.2.e.3andhaving ` processingequipmentspeciallydesignedforrealtimeapplicationwithbottomorbaycablesystems;and   ` (vi)"Software",asfollows:   `  (A)Controlledby4D001,speciallydesignedforthe"development"or"production"foritemscontrolledby4A003.bor.c,asdefinedbyparagraphs(a)(2)(ii)and(iii)ofthissection;and   `  (B)Controlledby5D001.a,speciallydesignedforitemscontrolledby5A001.b.4;and -`'*    `  (C)Controlledby6D001foritemscontrolledby6A008.l.3or6B008;and   `  (D)Controlledby6D003.a;and   `  (E)Controlledby7D003.aor7D003.b;and   `  (F)Controlledby8D001,speciallydesignedforthe"development"or"production"ofequipmentcontrolledby8A001.b,8A001.d,or8A002.o.3.b;and   `  (G)Controlledby9D001,speciallydesignedforthe"development"ofequipmentor"technology"controlledby9A011,9E003.a.1,orby9E003.a.3,foritemscontrolledby1A002.a,asdescribedinparagraph(a)(2)(i)ofthissection;and   `    (H)Controlledby9D002for"software"speciallydesignedforthe"production"ofequipmentcontrolledby9A011;and   `  (I)Controlledby9D004.aor.c.@$*****SUPPLEMENTNO.1TO740.11ADDITIONALRESTRICTIONSONUSEOFLICENSEEXCEPTIONGOV.(a) ItemsforofficialusewithinnationalterritorybyagenciesoftheU.S.Government.  H&" LicenseExceptionGOVisavailableforallitemsconsignedtoandfortheofficialuseofanyagencyofacooperatinggovernmentwithintheterritoryofanycooperatinggovernment,except:  (1)ItemsidentifiedontheCommerceControlListascontrolledfornationalsecurity(NS)reasonsunderExportControlClassificationNumbers(ECCNs)asfollowsforexportor -`'* reexporttodestinationsotherthanAustria,Belgium,Canada,Denmark,Finland,France,Germany,Greece,Ireland,Italy,Luxembourg,theNetherlands,Portugal,Spain,Sweden,ortheUnitedKingdom:1C001,1C012,5A001.b.4,6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.e.1,6A001.a.2.e.2,6A002.a.1.c,6A008.l.3.,6B008,8A001.b.,8A001.d.,8A002.o.3.b.,9A011;and   ` (i)"Composite"structuresorlaminatescontrolledby1A002.a.,havinganorganic"matrix"andmadefrommaterialslistedunder1C010.c.or1C010.d.;and   ` (ii)"Digital"computerscontrolledby4A003.b.andhavingaCTPexceeding10,000MTOPS;and   ` (iii)"Electronicassemblies"controlledby4A003.c.andcapableofenhancingperformancebyaggregationof"computingelements"sothattheCTPoftheaggregationexceeds10,000MTOPS;and   ` (iv)Processingequipmentcontrolledby6A001.a.2.c.andspeciallydesignedforrealtimeapplicationwithtowedacoustichydrophonearrays;and   ` (v)Bottomorbaycablesystemscontrolledby6A001.a.2.e.3andhavingprocessingequipmentspeciallydesignedforrealtimeapplicationwithbottomorbaycablesystems;and   ` (vi)"Software",asfollows:   `  (A)Controlledby4D001,speciallydesignedforthe"development"or"production"foritemscontrolledby4A003.bor.c,asdefinedbyparagraphs(a)(1)(ii)and(iii)ofthisSupplement;and   `  (B)Controlledby5D001.a,speciallydesignedforitemscontrolledby -`'* 5A001.b.4;and   `  (C)Controlledby6D001foritemscontrolledby6A008.l.3or6B008;and   `  (D)Controlledby6D003.a;and   `  (E)Controlledby7D003.aor7D003.b;and   `  (F)Controlledby8D001,speciallydesignedforthe"development"or"production"ofequipmentcontrolledby8A001.b,8A001.d,or8A002.o.3.b;and   `  (G)Controlledby9D001,speciallydesignedforthe"development"ofequipmentor"technology"controlledby9A011,9E003.a.1,orby9E003.a.3,foritemscontrolledby1A002.a,asdescribedinparagraph(a)(1)(i)ofthisSupplement;and   `  (H)Controlledby9D002for"software"speciallydesignedforthe"production"ofequipmentcontrolledby9A011;and   `  (I)Controlledby9D004.aor.c;and   ` (vii)"Technology",asfollows:   `  (A)Controlledby5E001.aforitemscontrolledby5A001.b.4or5D001.a;and   `  (B)Controlledby1E001foritemscontrolledby1A002.a,1C001,or1C102asdescribedbyparagraph(a)(1)(i)ofthisSupplement;and   `  (C)Controlledby6E001forthe"development"ofequipmentor"software"in6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.c,6A001.a.2,a.3,6A002.a.1.c,6A008.l.3,or6B008,asdescribedinparagraph(a)(1)ofthisSupplement;and   `  (D)Controlledby6E002forthe"production"ofequipmentcontrolledby -`'* 6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.c,6A001.a.2.3,6A002.a.1.c,6A008.l.3,or6B008,asdescribedinparagraph(a)(1)ofthisSupplement;and   `  (E)Controlledby8E001foritemscontrolledby8A001.b,8A002.o.3.b,or8A001.d;and   `  (F)Controlledby9E001foritemscontrolledby9A011,9D001,or9D002;and   `  (G)Controlledby9E002foritemscontrolledby9A011;and   `  (H)Controlledby9E003.a.1;and   `  (I)Controlledby9E003.a.3foritemscontrolledby1A002.aasdescribedinparagraph(a)(1)ofthisSupplement;  (2)ItemsidentifiedontheCommerceControlListascontrolledformissiletechnology(MT),chemicalandbiologicalwarfare(CB),ornuclearnonproliferation(NP)reasons;  (3)RegionalstabilityitemscontrolledunderExportControlClassificationNumbers(ECCNs)6A002,6A003,6E001,6E002,7D001,7E001,7E002,and7E101asdescribedin742.6(a)(1)oftheEAR;or  (4)EncryptionitemscontrolledforEIreasonsasdescribedintheCommerceControlList.(b)Diplomaticandconsularmissionsofacooperatinggovernment.LicenseExceptionGOVis -`'* availableforallitemsconsignedtoandfortheofficialuseofadiplomaticorconsularmissionofacooperatinggovernmentlocatedinanycountryinCountryGroupB(seeSupplementNo.1topart740),except:  (1)ItemsidentifiedontheCommerceControlListascontrolledfornationalsecurity(NS)reasonsunderExportControlClassificationNumbers(ECCNs)asfollowsforexportorreexporttodestinationsotherthanAustria,Belgium,Canada,Denmark,Finland,France,Germany,Greece,Ireland,Italy,Luxembourg,theNetherlands,Portugal,Spain,Sweden,ortheUnitedKingdom:1C001,1C012,5A001.b.4,6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.e.1,6A001.a.2.e.2,6A002.a.1.c,6A008.l.3.,6B008,8A001.b.,8A001.d.,8A002.o.3.b.,9A011;and   ` (i)"Composite"structuresorlaminatescontrolledby1A002.a.,havinganorganic"matrix"andmadefrommaterialslistedunder1C010.c.or1C010.d.;and   ` (ii)"Digital"computerscontrolledby4A003.b.andhavingaCTPexceeding10,000MTOPS;and   ` (iii)"Electronicassemblies"controlledby4A003.c.andcapableofenhancingperformancebyaggregationof"computingelements"sothattheCTPoftheaggregationexceeds10,000MTOPS;and   ` (iv)Processingequipmentcontrolledby6A001.a.2.c.andspeciallydesignedforrealtimeapplicationwithtowedacoustichydrophonearrays;and   ` (v)Bottomorbaycablesystemscontrolledby6A001.a.2.e.3andhavingprocessingequipmentspeciallydesignedforrealtimeapplicationwithbottomorbaycableϜsystems;and -`'*    ` (vi)"Software",asfollows:   `  (A)Controlledby4D001,speciallydesignedforthe"development"or"production"foritemscontrolledby4A003.bor.c,asdefinedbyparagraphs(b)(1)(ii)or(iii)ofthisSupplement;and   `  (B)Controlledby5D001.a,speciallydesignedforitemscontrolledby5A001.b.4;and   `  (C)Controlledby6D001foritemscontrolledby6A008.l.3or6B008;and   `  (D)Controlledby6D003.a;and   `  (E)Controlledby7D003.aor7D003.b;and   `  (F)Controlledby8D001,speciallydesignedforthe"development"or"production"ofequipmentcontrolledby8A001.b,8A001.d,or8A002.o.3.b;and   `  (G)Controlledby9D001,speciallydesignedforthe"development"ofequipmentor"technology"controlledby9A011,9E003.a.1,orby9E003.a.3,foritemscontrolledby1A002.a,asdescribedinparagraph(b)(1)(i)ofthisSupplement;and   `  (H)Controlledby9D002for"software"speciallydesignedforthe"production"ofequipmentcontrolledby9A011;and   `  (I)Controlledby9D004.aor.c;and   ` (vii)"Technology",asfollows:   `  (A)Controlledby5E001.aforitemscontrolledby5A001.b.4or5D001.a;and   `  (B)Controlledby1E001foritemscontrolledby1A002.a,1C001,or -`'* 1C102asdescribedbyparagraph(b)(1)ofthisSupplement;and   `  (C)Controlledby6E001forthe"development"ofequipmentor"software"in6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.c,6A001.a.2.3,6A002.a.1.c,6A008.l.3,or6B008,asdescribedinparagraph(b)(1)ofthisSupplement;and   ` (D)Controlledby6E002forthe"production"ofequipmentcontrolledby6A001.a.2.a.1,6A001.a.2.a.2,6A001.a.2.a.7,6A001.a.2.b,6A001.a.2.c,6A001.a.2.3,6A002.a.1.c,6A008.l.3,or6B008,asdescribedinparagraph(b)(1)ofthisSupplement;and   ` (E)Controlledby8E001foritemscontrolledby8A001.b,8A002.o.3.b,or8A001.d;and   ` (F)Controlledby9E001foritemscontrolledby9A011,9D001,or9D002;and   ` (G)Controlledby9E002foritemscontrolledby9A011;and   ` (H)Controlledby9E003.a.1;and   ` (I)Controlledby9E003.a.3foritemscontrolledby1A002.aasdescribedinparagraph(b)(1)(i)ofthisSupplement;and  (2)ItemsidentifiedontheCommerceControlListascontrolledformissiletechnology(MT),chemicalandbiologicalwarfare(CB),ornuclearnonproliferation(NP)reasons;  (3)RegionalstabilityitemscontrolledunderExportControlClassificationNumbers(ECCNs)6A002,6A003,6E001,6E002,7D001,7E001,7E002,and7E101asdescribedin742.6(a)(1)oftheEAR;or -`'* Ї  (4)EncryptionitemscontrolledforEIreasonsasdescribedintheCommerceControlList.PART743[AMENDED]  5.Section743.1isamendedbyrevising(c)(1)toreadasfollows:743.1WassenaarArrangement.@OO!******(c)Itemsforwhichreportsarerequired.    (1)YoumustsubmitreportstoBXAundertheprovisionsofthissectiononlyforexportsofitemscontrolledunderthefollowingECCNs:T@X4 <DL!T$&)\+- 0XT    (i)Category1:1A002,1C007.cand.d,1C010.cand.d,1D002,1E001,1E002.e, h$  and1E002.f.;    (ii)Category2:2B001.aor.b(certainitemsonly;seeNotetothisparagraph) ((!$ 2B001.dand.f,2B003,2D001,2E001,and2E002;  Notetoparagraph(c)(1)(ii):ThefollowingarenotcontrolledforNPreasons:turning -`'* machinescontrolledby2B001.awithacapacityequaltoorlessthan35mmdiameter;barmachines(Swissturn),limitedtomachiningonlybarfeedthrough,ifmaximumbardiameterisequaltoorlessthan42mmandthereisnocapabilityofmountingchucks(machinesmayhavedrillingand/ormillingcapabilitiesformachiningpartswithdiameterslessthan42mm);ormillingmachinescontrolledby2B001.bwithxaxistravelgreaterthantwometersandoverall"positioningaccuracy"onthexaxismore(worse)than0.030mm.Therefore,exportsofsuchitemsunderLicenseExceptionGOVaresubjecttoreportingrequirements.    (iii)Category3:3A002.g.2,3B001.a.2,3D001,and3E001;       (iv)Category4:4A001.a.2and.b,4A003.band.c(seeparagraph(c)(2)ofthis h section),4D001,4D003.c,and4E001;    (v)Category5:5A001.b.3,5B001(itemsspeciallydesignedfor5A001.b.3), ( 5D001.aand.b,and5E001.a;    (vi)Category6:6A001.a.1.b,.a.2.c,.a.2.d,and.a.2.e;6A002.b,6A004.candd,  6A006.gandh,6A008.d,.h,and.k;6D001,6D003.a,6E001,and6E002;    (vii)Category8:8A001.c;8A002.b,.h,.j,.o.3.a,and.p;8D001,8D002,8E001,  @ and8E002.a;and    (viii)Category9:9B001.b,9D001,9D002,9D004.aand.c,9E001,9E002, h$  9E003.a.1,9E003.a.2,.a.3,.a.4,.a.5,.a.8,and.a.9.@$***** -`'* PART774[AMENDED]  6.InSupplementNo.1topart774(theCommerceControlList),Category1Materials,Chemicals,Microorganisms,andToxins,ExportControlClassificationNumbers(ECCNs)areamended:  a.ByrevisingtheListofItemsControlledsectionforECCNs1C004and1C006;and  b.ByaddinganewECCN1C996,toreadasfollows:  1C004Uraniumtitaniumalloysortungstenalloyswitha"matrix"basedoniron,nickelor  copper,havingallofthecharacteristics(seeListofItemsControlled). @$*****  @  ListofItemsControlled  h$    Unit:Kilograms ((!$   RelatedControls:N/A *#&   RelatedDefinitions:N/A +%(   Items: -`'* Їa.Adensityexceeding17.5g/cm3; H b.Anelasticlimitexceeding880MPa;c.Anultimatetensilestrengthexceeding1,270MPa;and `  d.Anelongationexceeding8%. 1C006Fluidsandlubricatingmaterials,asfollows(seeListofItemsControlled).  (  @$*****  ` ListofItemsControlled  "    Unit:Barrels(55U.S.gallons/209liters) H&"   RelatedControls:N/A ((!$   RelatedDefinitions:N/A *#&   Items: +%(  -`'* a.Hydraulicfluidscontaining,astheirprincipalingredients,anyofthefollowingcompoundsormaterials:  a.1.Syntheticorsilahydrocarbonoils,havingallofthefollowing:  Note: Forthepurposeof1C006.a.1,silahydrocarbonoilscontainexclusivelysilicon, `  hydrogenandcarbon.    a.1.a.Aflashpointexceeding477K(204oC); h     a.1.b.Apourpointat239K(-34oC)orless; ( Ѐ    a.1.c.Aviscosityindexof75ormore;and      a.1.d.Athermalstabilityat616K(343$C);or  @   a.2.Chlorofluorocarbons,havingallofthefollowing:    Note: Forthepurposeof1C006.a.2,chlorofluorocarbonscontainexclusively ((!$ carbon,fluorineandchlorine.    a.2.a.Noflashpoint; -`'* Ї    a.2.b.Anautogenousignitiontemperatureexceeding977K(704oC); H     a.2.c.Apourpointat219K(-54oC)orless;       a.2.d.Aviscosityindexof80ormore;and `      a.2.e.Aboilingpointat473K(200oC)orhigher;   b.Lubricatingmaterialscontaining,astheirprincipalingredients,anyofthefollowingcompoundsormaterials:  b.1.Phenyleneoralkylphenyleneethersorthio-ethers,ortheirmixtures,containingmorethantwoetherorthio-etherfunctionsormixturesthereof;or `   b.2.Fluorinatedsiliconefluidswithakinematicviscosityoflessthan5,000mm2/s "  (5,000centistokes)measuredat298K(25oC); h$  c.Dampingorflotationfluidswithapurityexceeding99.8%,containinglessthan25particlesof200morlargerinsizeper100mlandmadefromatleast85%ofanyofthefollowingcompoundsormaterials: -`'*   c.1.Dibromotetrafluoroethane;  c.2.Polychlorotrifluoroethylene(oilyandwaxymodificationsonly);or (    c.3.Polybromotrifluoroethylene;d.Fluorocarbonelectroniccoolingfluids,havingallofthefollowingcharacteristics:  d.1.Containing85%byweightormoreofanyofthefollowing,ormixturesthereof:    d.1.a.Monomericformsofperfluoropolyalkylether-triazinesorperfluoroaliphatic-ethers;    d.1.b.Perfluoroalkylamines;̀    d.1.c.Perfluorocycloalkanes;or "      d.1.d.Perfluoroalkanes;  d.2.Densityat298K(25oC)of1.5g/mlormore; *#&   d.3.Inaliquidstateat273K(0oC);and -`'* Ї  d.4.Containing60%ormorebyweightoffluorine.   TechnicalNote: Forthepurposeof1C006: (    a.FlashpointisdeterminedusingtheClevelandOpenCupMethoddescribedinASTMD-92ornationalequivalents;  b.PourpointisdeterminedusingthemethoddescribedinASTMD-97ornationalequivalents;  c.ViscosityindexisdeterminedusingthemethoddescribeinASTMD-2270ornationalequivalents;  d.Thermalstabilityisdeterminedbythefollowingtestprocedureornationalequivalents:Twentymlofthefluidundertestisplacedina46mltype317stainlesssteelchambercontainingoneeachof12.5mm(nominal)diameterballsofM-10toolsteel,52100steelandnavalbronze(60%Cu,39%Zn,0.75%Sn);Thechamberispurgedwithnitrogen,sealedatatmosphericpressureandthetemperatureraisedtoandmaintainedat6446K(3716oC)forsixhours; -`'* ЇThespecimenwillbeconsideredthermallystableif,oncompletionoftheaboveprocedure,allofthefollowingconditionsaremet:  1.Thelossinweightofeachballislessthan10mg/mm2ofballsurface;     2.Thechangeinoriginalviscosityasdeterminedat311K(38oC)islessthan25%;and @    3.Thetotalacidorbasenumberislessthan0.40;e.AutogenousignitiontemperatureisdeterminedusingthemethoddescribedinASTME-659ornationalequivalents.̀ 1C996Hydraulicfluidscontainingsynthetichydrocarbonoils,havingallthefollowing  @ characteristics(seeListofItemsControlled).LicenseRequirements  H&"   ReasonforControl:AT *#&     Control(s)   h      p CountryChart -`'* Ї    ATappliestoentireentry     p ATColumn1 h  LicenseExceptions  (      LVS:N/A    GBS:N/A    CIV:N/A ListofItemsControlled  H   Unit:Barrels(55U.S.gallons/209liters)    RelatedControls:N/A    RelatedDefinitions:N/A `   Items:  @   a.Aflashpointexceeding477K(204oC); H&"   b.Apourpointat239K(-34oC)orless; *#& Ѐ  c.Aviscosityindexof75ormore;and -`'* Ї  d.Athermalstabilityat616K(343$C). h   7.InSupplementNo.1topart774(theCommerceControlList),Category2MaterialsProcessing,ExportControlClassificationNumbers(ECCNs)areamended:  a.ByrevisingECCN2B001;  b.ByrevisingtheentryheadingandtheListofItemsControlledsectionforECCN2B004;  c.ByrevisingtheListofItemsControlledsectionforECCN2B005;  d.ByrevisingtheentryheadingandtheListofItemsControlledforECCN2D001;and  e.ByrevisingtheListofItemsControlledsectionforECCN2E003,toreadasfollows:̀ 2B001Machinetools(seeListofItemsControlled)andanycombinationthereof,for ` removing(orcutting)metals,ceramicsor"composites",which,accordingtothemanufacturer'stechnicalspecification,canbeequippedwithelectronicdevicesfor"numericalcontrol". LicenseRequirements  ((!$ ReasonforControl:NS,NP,AT +%(  -`'*     Control(s)   h      p   CountryChart h       NSappliestoentireentry     p   NSColumn2 (      NPappliesto2B001.a,b,c,     p   NPColumn1       andd,EXCEPT:(1)turning̀    machinesunder2B001.a @      withacapacityequaltoor    lessthan35mmdiameter;(2)bar    machines(Swissturn),limited    tomachiningonlybarfeed    through,ifmaximumbardiameter    isequaltoorlessthan42mm    andthereisnocapabilityof    mountingchucks.(Machinesmay    havedrillingand/ormilling    capabilitiesformachiningparts    withdiameterslessthan42mm);or      (3)millingmachinesunder2B001.b.    withxaxistravelgreaterthantwo    metersandoverall"positioning    accuracy"onthexaxismore(worse) -`'*     than0.030mm  0   (#(#     ATappliestoentireentry     p   ATColumn1 (    LicenseRequirementNotes:See743.1oftheEARforreportingrequirementsfor   exportsunderLicenseExceptions. LicenseExceptions      LVS:N/A  H   GBS:N/A  CIV:N/A ListofItemsControlled `  0  Unit:Equipmentinnumber;partsandaccessoriesin$value" (#(#   RelatedControls:1.)Seealso2B290and2B991;2.)Seealso1B101.dforcutting h$    equipmentdesignedormodifiedforremovingprepregsandpreformscontrolledby  9A110.  RelatedDefinitions:N/A *#&   Items: +%(  -`'* a.Machinetoolsforturning,havingallofthefollowingcharacteristics:̀  a.1.Positioningaccuracywith allcompensationsavailableofless(better)than6malonganylinearaxis;and     a.2.Twoormoreaxeswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";̀  Note: 2B001.adoesnotcontrolturningmachinesspeciallydesignedfortheproduction h ofcontactlenses.̀b.Machinetoolsformilling,havinganyofthefollowingcharacteristics:    b.1.a.Positioningaccuracywith allcompensationsavailableofless(better)than6malonganylinearaxis;and  @     b.1.b.Threelinearaxesplusonerotaryaxiswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";  b.2.Fiveormoreaxeswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";or +%(  -`'*   b.3.Apositioningaccuracyforjigboringmachines,with allcompensationsavailable,ofless(better)than4malonganylinearaxis;c.Machinetoolsforgrinding,havinganyofthefollowingcharacteristics:    c.1.a.Positioningaccuracywith allcompensationsavailableofless(better)than4malonganylinearaxis;and @      c.1.b.Threeormoreaxeswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";or H   c.2.Fiveormoreaxeswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";̀  Notes: 2B001.cdoesnotcontrolgrindingmachines,asfollows:  @   1.Cylindricalexternal,internal,andexternal-internalgrindingmachineshavingallthefollowingcharacteristics:    a.Limitedtocylindricalgrinding;and *#& Ѐ    b.Limitedtoamaximumworkpiececapacityof150mmoutsidediameteror -`'* length.  2.Machinesdesignedspecificallyasjiggrindershavinganyoffollowingcharacteristics:    a.Thec-axisisusedtomaintainthegrindingwheelnormaltotheworksurface;or       b.Thea-axisisconfiguredtogrindbarrelcams.  3.Toolorcuttergrindingmachineslimitedtotheproductionoftoolsorcutters.̀  4.Crankshaftorcamshaftgrindingmachines. ( Ѐ  5.Surfacegrinders.̀d.Electricaldischargemachines(EDM)ofthenon-wiretypewhichhavetwoormorerotaryaxeswhichcanbecoordinatedsimultaneouslyfor"contouringcontrol";e.Machinetoolsforremovingmetals,ceramicsor"composites":  e.1.Bymeansof:̀    e.1.a.Waterorotherliquidjets,includingthoseemployingabrasiveadditives; -`'* Ѐ    e.1.b.Electronbeam;or H     e.1.c."Laser"beam;and     e.2.Havingtwoormorerotaryaxeswhich:̀    e.2.a.Canbecoordinatedsimultaneouslyfor"contouringcontrol";and       e.2.b.Haveapositioningaccuracyofless(better)than0.003o; H Ѐf.Deep-hole-drillingmachinesandturningmachinesmodifiedfordeep-hole-drilling,havingamaximumdepth-of-borecapabilityexceeding5,000mmandspeciallydesignedcomponentstherefor.̀ 2B004Hot"isostaticpresses",havingallofthefollowingcharacteristicsdescribedinthe h$  ListofItemsControlled,andspeciallydesignedcomponents,andaccessoriestherefor. @$***** ListofItemsControlled  -`'* Ї0  Unit:Equipmentinnumber;partsandaccessoriesin$valueh(#(# 0  RelatedControls:1)Seealso2B104and2B204.2)Forspeciallydesigneddies,molds H andtooling,see1B003,9B009andML18(22CFRpart121).3)Inaddition,see1B101.d,2B104and2B204forcontrolsondies,moldsandtooling. (#(#   RelatedDefinitions:N/A     Items: `  a.Acontrolledthermalenvironmentwithintheclosedcavityandpossessingachambercavitywithaninsidediameterof406mmormore;and h b.Anyofthefollowing:  b.1.Amaximumworkingpressureexceeding207MPa;  b.2.Acontrolledthermalenvironmentexceeding1,773K(1,500oC);or  @   b.3.Afacilityforhydrocarbonimpregnationandremovalofresultantgaseousdegradationproducts.  TechnicalNote: Theinsidechamberdimensionisthatofthechamberinwhichboththe *#& workingtemperatureandtheworkingpressureareachievedanddoesnotincludefixtures.Thatdimensionwillbethesmallerofeithertheinsidediameterofthepressurechamberortheinside -`'* diameteroftheinsulatedfurnacechamber,dependingonwhichofthetwochambersislocatedinsidetheother.̀ 2B005Equipmentspeciallydesignedforthedeposition,processingandin-processcontrol   ofinorganicoverlays,coatingsandsurfacemodificationsfornon-electronicsubstrates,byprocessesshownintheTableandassociatedNotesfollowing2E003.f,andspeciallydesignedautomatedhandling,positioning,manipulationandcontrolcomponentstherefor. @$***** h  ListofItemsControlled  (   Unit:$value  0  RelatedControls:1.)Thisentrydoesnotcontrolchemicalvapordeposition,cathodic ` arc,sputterdeposition,ionplatingorionimplantationequipmentspeciallydesignedforcuttingormachiningtools.2.)Vapordepositionequipmentfortheproductionoffilamentarymaterialsarecontrolledby1B001or1B101.3.)ChemicalVaporDepositionfurnacesdesignedormodifiedfordensificationofcarboncarboncompositesarecontrolledby2B104. (#(#   RelatedDefinitions:N/A *#&   Items: +%(  -`'* a."Storedprogramcontrolled"chemicalvapordeposition(CVD)productionequipmenthavingallofthefollowing:  a.1.Processmodifiedforoneofthefollowing:    a.1.a.PulsatingCVD;    a.1.b.Controllednucleationthermaldeposition(CNTD);or       a.1.c.PlasmaenhancedorplasmaassistedCVD;and H   a.2.Anyofthefollowing:    a.2.a.Incorporatinghighvacuum(equaltoorlessthan0.01Pa)rotatingseals;or `     a.2.b.Incorporatinginsitucoatingthicknesscontrol; "  Ѐb."Storedprogramcontrolled"ionimplantationproductionequipmenthavingbeamcurrentsof5mAormore;c."Storedprogramcontrolled"electronbeamphysicalvapor(EB-PVD)productionequipmentincorporatingpowersystemsratedforover80kW,havinganyofthefollowing: -`'* Ї  c.1.Aliquidpoollevel"laser"controlsystemwhichregulatespreciselytheingotsfeedrate;or  c.2.Acomputercontrolledratemonitoroperatingontheprincipleofphoto-luminescenceoftheionizedatomsintheevaporantstreamtocontrolthedepositionrateofacoatingcontainingtwoormoreelements;d."Storedprogramcontrolled"plasmasprayingproductionequipmenthavinganyofthefollowingcharacteristics:  d.1.Operatingatreducedpressurecontrolledatmosphere(equalorlessthan10kPameasuredaboveandwithin300mmofthegunnozzleexit)inavacuumchambercapableofevacuationdownto0.01Papriortothesprayingprocess;or    d.2.Incorporatinginsitucoatingthicknesscontrol;  @ e."Storedprogramcontrolled"sputterdepositionproductionequipmentcapableofcurrentdensitiesof0.1mA/mm2orhigheratadepositionrate15m/hormore; H&" f."Storedprogramcontrolled"cathodicarcdepositionequipmentincorporatingagridofelectromagnetsforsteeringcontrolofthearcspotonthecathode; -`'* g."Storedprogramcontrolled"ionplatingproductionequipmentallowingfortheinsitu h measurementofanyofthefollowing:  g.1.Coatingthicknessonthesubstrateandratecontrol;or  g.2.Opticalcharacteristics. 2D001"Software",otherthanthatcontrolledby2D002,speciallydesignedormodifiedfor   the"development","production"or"use"ofequipmentcontrolledby2A001or2B001to2B009.  H @$*****XXXX ListofItemsControlled     Unit:N/A  @ 0  RelatedControls:Thisentrycontrolssoftware,notcoveredby2D101,thatarespecially "  designedormodifiedforthecontrollersofflowformingmachinesspecifiedby2B109. (#(#   RelatedDefinitions:N/A H&"   Items: ((!$ ThelistofitemscontrollediscontainedintheECCNheading.#XXXX# -`'*  2E003Other"technology",asfollows(seeListofItemsControlled). h  @#***** (         ListofItemsControlled      Unit:N/A @  0  RelatedControls:See2E001,2E002,and2E101for developmentand use   technologyforequipmentthataredesignedormodifiedfordensificationofcarboncarboncomposites,structuralcompositerocketnozzlesandreentryvehiclenosetips. (#(#   RelatedDefinitions:N/A (   Items:  a."Technology"forthe"development"ofinteractivegraphicsasanintegratedpartin"numericalcontrol"unitsforpreparationormodificationofpartprograms;b."Technology"formetal-workingmanufacturingprocesses,asfollows:  b.1."Technology"forthedesignoftools,diesorfixturesspeciallydesignedforanyofthefollowingprocesses:    b.1.a."Superplasticforming"; -`'* Ї    b.1.b."Diffusionbonding";or h     b.1.c."Direct-actinghydraulicpressing";  b.2.Technicaldataconsistingofprocessmethodsorparametersaslistedbelowusedtocontrol:    b.2.a."Superplasticforming"ofaluminumalloys,titaniumalloysor"superalloys":     b.2.a.1.Surfacepreparation;     b.2.a.2.Strainrate;     b.2.a.3.Temperature;     b.2.a.4.Pressure;    b.2.b."Diffusionbonding"of"superalloys"ortitaniumalloys:     b.2.b.1.Surfacepreparation;     b.2.b.2.Temperature; -`'* Ї     b.2.b.3.Pressure;    b.2.c."Direct-actinghydraulicpressing"ofaluminumalloysortitaniumalloys:̀     b.2.c.1.Pressure;̀     b.2.c.2.Cycletime;̀    b.2.d."Hotisostaticdensification"oftitaniumalloys,aluminumalloysor"superalloys":     b.2.d.1.Temperature;     b.2.d.2.Pressure;     b.2.d.3.Cycletime;̀c."Technology"forthe"development"or"production"ofhydraulicstretch-formingmachinesanddiestherefor,forthemanufactureofairframestructures; -`'* d."Technology"forthe"development"ofgeneratorsofmachinetoolinstructions(e.g.,partprograms)fromdesigndataresidinginside"numericalcontrol"units;e."Technologyforthedevelopment"ofintegration"software"forincorporationofexpertsystemsforadvanceddecisionsupportofshopflooroperationsinto"numericalcontrol"units;f."Technology"fortheapplicationofinorganicoverlaycoatingsorinorganicsurfacemodificationcoatings(specifiedincolumn3ofthefollowingtable)tonon-electronicsubstrates(specifiedincolumn2ofthefollowingtable),byprocessesspecifiedincolumn1ofthefollowingtableanddefinedintheTechnicalNote.̀  N.B.Thistableshouldbereadtocontrolthetechnologyofaparticular'CoatingProcess'  onlywhenthe'ResultantCoating'incolumn3isinaparagraphdirectlyacrossfromtherelevant'Substrate'undercolumn2.Forexample,ChemicalVaporDeposition(CVD)coatingprocesstechnicaldataarecontrolledfortheapplicationof'silicides'to'Carboncarbon,CeramicandMetal"matrix""composites"substrates,butarenotcontrolledfortheapplicationof'silicides'to'Cementedtungstencarbide(16),Siliconcarbide(18)'substrates.Inthesecondcase,the'ResultantCoating'isnotlistedintheparagraphundercolumn3directlyacrossfromtheparagraphundercolumn2listing'Cementedtungstencarbide(16),Siliconcarbide(18)'.  8.InSupplementNo.1topart774(theCommerceControlList),Category2MaterialProcessingisamendedbyrevisingtheMaterialsProcessingTableinCategory2Etoreadas -`'* follows: Category2EMaterialsProcessingTable;DepositionTechniques  (  1.CoatingProcess(1)   1        2.Substrate  3.ResultantCoating `  A.ChemicalVapor   "Superalloys"  Aluminidesfor   x     Deposition(CVD)     internalpassages h ̀   Ceramics(19)andLow- p Silicides ( Ѐ   expansionglasses(14) p Carbides  Ѐ h      p Dielectriclayers(15)          h      p Diamond        h      p Diamondlike        h      p carbon(17)̀    h Carbon-carbon, p Silicides H&" Ѐ    h Ceramic,and p Carbides ((!$ Ѐ    h Metal"matrix" p Refractory *#&         h "composites"   p metals h Ѐ h      p Mixtures   x   H         h      p thereof(4) x   (          h      p Dielectric        h      p layers(15)̀ h      p Aluminides `  Ѐ h      p Alloyed @  Ѐ      h      p aluminides(2)           h      p Boronnitridè   Cementedtungsten p Carbides ( Ѐ   carbide(16),   p Tungsten  Ѐ   Siliconcarbide(18)   p Mixtures   x            h      p thereof(4)       p Dielectric  @ Ѐ        h      p layers(15) "  ̀   Molybdenumand p Dielectric H&"        Molybdenumalloys p layers(15) ((!$ Ѐ̀   Berylliumand p Dielectric  -`'*        Berylliumalloys p layers(15) h         h      p Diamond        h      p Diamondlike        h      p carbon(17)̀̀   Sensorwindow p Dielectric `         materials(9)   p layers(15) @          h      p Diamond        h      p Diamondlike        h      p carbon(17)̀B.Thermal-EvaporatioǹPhysicalVapor̀Deposition(TEPVD)1.PhysicalVapor   "Superalloys"   p Alloyed h$  ЀDeposition(PVD):     p silicides H&" Electron-Beam(EBPVD)̀   h      p Alloyed +%( Ѐ        h      p aluminides(2) -`'* Ї     h      p McrAlX(5) h ̀   h      p Modified (  Ѐ        h      p zirconia(12)   Ѐ h      p Silicides   ̀ h      p Aluminides @  ̀ h      p Mixtures h Ѐ        h      p thereof(4) H ̀   Ceramics(19)andLow- p Dielectric         expansionglasses   p layers(15) `     (14)̀   Corrosion   p MCrAlX(5) h$  Ѐ   resistant     p Modified H&" Ѐ   steel(7)     p zirconia(12) ((!$ Ѐ̀ h      p Mixtures +%( Ѐ        h      p thereof(4) -`'* Ї   Carbon-carbon,   p Silicides h Ѐ   Ceramicand   p Carbides H Ѐ   Metal"matrix"   p Refractory (         "composites"   p metals   Ѐ   h      p Mixtures     Ѐ        h      p thereof(4) `  Ѐ      h      p      x   @          h      p Dielectricπ        h      p layers(15) h         h      p Boronnitridè   Cementedtungsten   p Carbides  Ѐ   carbide(16),   p Tungsten ` Ѐ   Siliconcarbide(18)   p Mixtures  @ Ѐ        h      p thereof(4) "  Ѐ h      p      x   h$          h      p Dielectricπ        h      p layers(15) ((!$ ̀   Molybdenumand   p Dielectric +%(        Molybdenumalloys   p layers(15) -`'* Ѐ̀   Berylliumand   p Dielectric (         Berylliumalloys   p layers(15)   Ѐ   h      p Borides           h      p Beryllium̀   Sensorwindow   p Dielectric          materials(9)   p layers(15) h Ѐ        h      p     ̀   Titanium     p Borides  Ѐ   alloys(13)     p Nitrides  2.Ionassisted   Ceramics(19)andLow- p Dielectric  @ Ѐresistiveheating  expansionglasses   p layers(15) "  ЀPhysicalVapor  (14) h      p Diamondlike h$  ЀDeposition(PVD)(Ion   h      p carbon(17) H&" ЀPlating)    h      p      ((!$ ̀   Carbon-carbon,   p Dielectric +%(        Ceramicand   p layers(15) -`'*        Metal"matrix"̀   "composites" H ̀   Cementedtungsten   p Dielectric     carbide(16)     p layers(15)   Ѐ   Siliconcarbide `  ̀   Molybdenumand p Dielectric x          Molybdenumalloys p layers(15) h ̀   Berylliumand   p Dielectric   x   (        Berylliumalloys   p layers(15)  ̀   Sensorwindow   p Dielectric `      materials(9)   p layers(15)  @         h      p Diamondlike        h      p carbon(17)  3.PhysicalVapor  Ceramics(19)andLow-Silicides *#& ЀDeposition(PVD):  expansion +%( Ѐ"Laser"     glasses(14)   p Dielectric -`'* ЀVaporization    h      p layers(15) h         h      p Diamondlike        h      p carbon(17)    ̀   Carbon-carbon,   p Dielectric   x  @         Ceramicand   p layers(15)   Ѐ   Metal"matrix" h Ѐ   "composites" H ̀   Cementedtungsten   p Dielectric  Ѐ   carbide(16),   p layers(15)  Ѐ   Siliconcarbide ` ̀   Molybdenumand p Dielectric "  Ѐ   Molybdenumalloys p layers(15) h$  ̀   Berylliumand   p Dielectric   x   ((!$        Berylliumalloys   p layers(15) *#& ̀   Sensorwindow   p Dielectric   x   -`'*        materials(9)   p layers(15) h         h      p Diamondlike        h      p carbon4.PhysicalVapor  "Superalloys"   p Alloyed   `  Deposition(PVD):Cathodic   p silicides @  ArcDischarge. h      p Alloyed           h      p Aluminides(2)        h      p MCrAlX(5)̀   Polymers(11)and   p Borides  Ѐ   Organic"matrix"   p Carbides  Ѐ   "composites"   p Nitrides `         h      p Diamondlike        h      p carbon(17)C.Packcementation  Carbon-carbon,   p Silicides H&" (seeAabovefor  Ceramicand   p Carbides ((!$ out-of-pack   Metal"matrix"   p Mixtures *#& cementation)(10)  "composites"   p thereof(4) +%(  -`'* Ѐ   Titanium   p Silicides h Ѐ   alloys(13)   p Aluminides H Ѐ h      p Alloyed (  Ѐ        h      p aluminides(2)   ̀   Refractorymetals p Silicides `  Ѐ   andalloys(8) p Oxides @  D.Plasmaspraying  "Superalloys"   p MCrAlX(5) h Ѐ h      p Modified H Ѐ      h      p zirconia(12) ( Ѐ h      p Mixtures          h      p thereof(4)̀ h      p Abradable ` Ѐ        h      p Nickel-Graphite  @ Ѐ h      p Abradable   x   "          h      p materialscontaining x   h$          h      p NiCrAl̀   h      p Abradable *#& Ѐ   h      p Al-Si-Polyester +%( Ѐ h      p Alloyed -`'* Ѐ        h      p aluminides(2) h ̀   Aluminum   p MCrAIX(5) (  Ѐ   alloys(6)   p Modified   Ѐ      h      p zirconia(12)   Ѐ   h      p Silicides `  Ѐ   h      p Mixtures   x   @          h      p thereof(4)̀     Refractorymetals   p Aluminides H Ѐ   andalloys(8)   p Silicides ( Ѐ  Carbides  ̀   Corrosion     p MCrAIX(5)  @        resistant   p Modified "    steel(7)   p zirconia(12) h$  Ѐ      h      p Mixtures   x   H&"         h      p thereof(4) ((!$ ̀   Titanium   p Carbides +%( Ѐ   alloys(13)   p Aluminides -`'* Ѐ      h      p Silicides h Ѐ h      p Alloyed H Ѐ        h      p aluminides(2) (  Ѐ  Abradable   Ѐ  Nickel-Graphite   Ѐ   h      p Abradable   x   `          h      p materials   x   @          h      p containingNiCrAl̀   h      p Abradable h Ѐ   h      p Al-Si-Polyester H E.SlurryDeposition  Refractorymetals   p Fusedsilicides  Ѐ   andalloys(8)   p Fused     x            h      p aluminides̀ h      p exceptfor  @ Ѐ      h      p resistance "  Ѐ   h      p heating   x   h$          h      p elements̀   Carbon-carbon,   p Silicides *#& Ѐ   Ceramicand   p Carbides +%( Ѐ   Metal"matrix"   p Mixtures x   -`'*        "composites"   p thereof(4) h F.SputterDeposition  "Superalloys"   p Alloyed   x   (          h      p silicides̀   h      p Alloyed   x             h      p aluminides(2)̀   h      p Noblemetal @  Ѐ      h      p modified   Ѐ   h      p aluminides(3) h Ѐ   h      p McrAlX(5) H Ѐ   h      p Modified   x   (         h      p zirconia(12)̀   h      p Platinum  Ѐ   h      p Mixtures   x   `         h      p thereof(4)̀   CeramicsandLow- p Silicides h$  Ѐ   expansion   p Platinum H&" Ѐ   glasses(14)   p Mixtures   x   ((!$         h      p thereof(4)̀ h      p Dielectric   x   +%(         h      p layers(15) -`'*         h      p Diamondlikecarbon(17)̀   Titanium (  Ѐ   alloys(13)   p Borides   Ѐ h      p Nitrides   Ѐ h      p Oxides `  Ѐ h      p Silicides @  Ѐ h      p Aluminides   Ѐ h      p Alloyed h Ѐ        h      p aluminides(2) H Ѐ h      p Carbides ( ̀   Carbon-carbon,   p Silicides  Ѐ   Ceramicand   p Carbides `     Metal"matrix"   p Refractory   x    @      "Composites"     p metals "  Ѐ    h      p Mixtures   x   h$          h      p thereof(4)̀ h      p Dielectric   x   ((!$         h      p layers(15)        h      p Boronnitride -`'* Ѐ   Cementedtungsten   p Carbides h Ѐ   carbide(16),   p Tungsten H Ѐ   Siliconcarbide(18) p Mixtures   x   (          h      p thereof(4)̀ h      p Dielectric   x             h      p layers(15)        h      p Boronnitridè   Molybdenumand p Dielectric h Ѐ   Molybdenumalloys p layers(15) H ̀   Berylliumand   p Borides          Berylliumalloys   p Dielectric   x            h      p layers(15)        h      p Beryllium̀   Sensorwindow   p Dielectric  h$         materials(9)   p layers(15) H&"         h      p Diamondlike x   ((!$         h      p carbon(17)̀   Refractorymetals   p Aluminides -`'* Ѐ   andalloys(8)   p Silicides h Ѐ   h      p Oxides H Ѐ   h      p Carbides (  G.IonImplantation  Hightemperature   p Additionsof          bearingsteels   p Chromium, `  Ѐ      h      p Tantalum,or @        h      p Niobium         h      p (Columbium) h ̀   Titanium   p Borides ( Ѐ   alloys(13)   p Nitrides  ̀   Berylliumand   p Borides ` Ѐ   Berylliumalloys  @ ̀   Cementedtungsten p Carbides h$  Ѐ   carbide(16)   p Nitrides H&"   -`'*   NotestoTableonDepositionTechniques:  H   1.Theterm'coatingprocess'includescoatingrepairandrefurbishingaswellasoriginalcoating.  2.Theterm'alloyedaluminidecoating'includessingleormultiple-stepcoatingsinwhichanelementorelementsaredepositedpriortoorduringapplicationofthealuminidecoating,eveniftheseelementsaredepositedbyanothercoatingprocess.Itdoesnot,however,includethemultipleuseofsingle-steppackcementationprocessestoachievealloyedaluminides.  3.Theterm'noblemetalmodifiedaluminide'coatingincludesmultiple-stepcoatingsinwhichthenoblemetalornoblemetalsarelaiddownbysomeothercoatingprocesspriortoapplicationofthealuminidecoating.  4.Theterm'mixturesthereof'includesinfiltratedmaterial,gradedcompositions,co-depositsandmultilayerdepositsandareobtainedbyoneormoreofthecoatingprocessesspecifiedintheTable.  5.MCrAlXreferstoacoatingalloywhereMequalscobalt,iron,nickelorcombinationsthereofandXequalshafnium,yttrium,silicon,tantaluminanyamountorotherintentionaladditionsover0.01weightpercentinvariousproportionsandcombinations,except: -`'* Ї    a.CoCrAlYcoatingswhichcontainlessthan22weightpercentofchromium,lessthan7weightpercentofaluminumandlessthan2weightpercentofyttrium;    b.CoCrAlYcoatingswhichcontain22to24weightpercentofchromium,10to12weightpercentofaluminumand0.5to0.7weightpercentofyttrium;or       c.NiCrAlYcoatingswhichcontain21to23weightpercentofchromium,10to12weightpercentofaluminumand0.9to1.1weightpercentofyttrium.  6.Theterm'aluminumalloys'referstoalloyshavinganultimatetensilestrengthof190MPaormoremeasuredat293K(20$C). (   7.Theterm'corrosionresistantsteel'referstoAISI(AmericanIronandSteelInstitute)300seriesorequivalentnationalstandardsteels.  8.'Refractorymetalsandalloys'includethefollowingmetalsandtheiralloys:niobium(columbium),molybdenum,tungstenandtantalum.  9.'Sensorwindowmaterials',asfollows:alumina,silicon,germanium,zincsulphide,zincselenide,galliumarsenide,diamond,galliumphosphide,sapphireandthefollowingmetalhalides:sensorwindowmaterialsofmorethan40mmdiameterforzirconiumfluorideandhafniumfluoride. -`'* Ї  10."Technology"forsingle-steppackcementationofsolidairfoilsisnotcontrolledbythisCategory.  11.'Polymers',asfollows:polyimide,polyester,polysulfide,polycarbonatesandpolyurethanes.  12.'Modifiedzirconia'referstoadditionsofothermetaloxides,(e.g.,calcia,magnesia,yttria,hafnia,rareearthoxides)tozirconiainordertostabilizecertaincrystallographicphasesandphasecompositions.Thermalbarriercoatingsmadeofzirconia,modifiedwithcalciaormagnesiabymixingorfusion,arenotcontrolled.  13.'Titaniumalloys'refersonlytoaerospacealloyshavinganultimatetensilestrengthof900MPaormoremeasuredat293K(20$C).    14.'Low-expansionglasses'referstoglasseswhichhaveacoefficientofthermalexpansionof1x10-7K-1orlessmeasuredat293K(20$C). "    15.'Dielectriclayers'arecoatingsconstructedofmulti-layersofinsulatormaterialsinwhichtheinterferencepropertiesofadesigncomposedofmaterialsofvariousrefractiveindicesareusedtoreflect,transmitorabsorbvariouswavelengthbands.Dielectriclayersreferstomorethanfourdielectriclayersordielectric/metal"composite"layers. -`'*   16.'Cementedtungstencarbide'doesnotincludecuttingandformingtoolmaterialsconsistingoftungstencarbide/(cobalt,nickel),titaniumcarbide/(cobalt,nickel),chromiumcarbide/nickel-chromiumandchromiumcarbide/nickel.  17."Technology"speciallydesignedtodepositdiamondlikecarbononanyofthefollowingisnotcontrolled:magneticdiskdrivesandheads,polycarbonateeyeglasses,equipmentforthemanufactureofdisposals,bakeryequipment,valvesforfaucets,acousticdiaphragmsforspeakers,enginepartsforautomobiles,cuttingtools,punchingpressingdies,highqualitylensesdesignedforcamerasortelescopes,officeautomationequipment,microphonesormedicaldevices.  18.'Siliconcarbide'doesnotincludecuttingandformingtoolmaterials.  19.Ceramicsubstrates,asusedinthisentry,doesnotincludeceramicmaterialscontaining5%byweight,orgreater,clayorcementcontent,eitherasseparateconstituentsorincombination.  TechnicalNotetoTableonDepositionTechniques: ProcessesspecifiedinColumn1 H&" oftheTablearedefinedasfollows:  a.ChemicalVaporDeposition(CVD)isanoverlaycoatingorsurfacemodificationcoatingprocesswhereinametal,alloy,"composite",dielectricorceramicisdepositedupona -`'* heatedsubstrate.Gaseousreactantsaredecomposedorcombinedinthevicinityofasubstrateresultinginthedepositionofthedesiredelemental,alloyorcompoundmaterialonthesubstrate.Energyforthisdecompositionorchemicalreactionprocessmaybeprovidedbytheheatofthesubstrate,aglowdischargeplasma,or"laser"irradiation.    Note1: CVDincludesthefollowingprocesses:directedgasflowout-of-pack `  deposition,pulsatingCVD,controllednucleationthermaldecomposition(CNTD),plasmaenhancedorplasmaassistedCVDprocesses.    Note2: Packdenotesasubstrateimmersedinapowdermixture. H     Note3: Thegaseousreactantsusedintheout-of-packprocessareproducedusing  thesamebasicreactionsandparametersasthepackcementationprocess,exceptthatthesubstratetobecoatedisnotincontactwiththepowdermixture.  b.ThermalEvaporation-PhysicalVaporDeposition(TE-PVD)isanoverlaycoatingprocessconductedinavacuumwithapressurelessthan0.1Pawhereinasourceofthermalenergyisusedtovaporizethecoatingmaterial.Thisprocessresultsinthecondensation,ordeposition,oftheevaporatedspeciesontoappropriatelypositionedsubstrates.Theadditionofgasestothevacuumchamberduringthecoatingprocesstosynthesizecompoundcoatingsisanordinarymodificationoftheprocess.Theuseofionorelectronbeams,orplasma,toactivateorassistthecoating'sdepositionisalsoacommonmodificationinthistechnique.Theuseof -`'* monitorstoprovidein-processmeasurementofopticalcharacteristicsandthicknessofcoatingscanbeafeatureoftheseprocesses.SpecificTE-PVDprocessesareasfollows:    1.ElectronBeamPVDusesanelectronbeamtoheatandevaporatethematerialwhichformsthecoating;    2.IonAssistedResistiveHeatingPVDemployselectricallyresistiveheatingsourcesincombinationwithimpingingionbeam(s)toproduceacontrolledanduniformfluxofevaporatedcoatingspecies;    3."Laser"Vaporizationuseseitherpulsedorcontinuouswave"laser"beamstovaporizethematerialwhichformsthecoating;    4.CathodicArcDepositionemploysaconsumablecathodeofthematerialwhichformsthecoatingandhasanarcdischargeestablishedonthesurfacebyamomentarycontactofagroundtrigger.Controlledmotionofarcingerodesthecathodesurfacecreatingahighlyionizedplasma.Theanodecanbeeitheraconeattachedtotheperipheryofthecathode,throughaninsulator,orthechamber.Substratebiasingisusedfornonline-of-sightdeposition.  Note: Thisdefinitiondoesnotincluderandomcathodicarcdepositionwithnon-biased *#& substrates. -`'*     5.IonPlatingisaspecialmodificationofageneralTE-PVDprocessinwhichaplasmaoranionsourceisusedtoionizethespeciestobedeposited,andanegativebiasisappliedtothesubstrateinordertofacilitatetheextractionofthespeciesfromtheplasma.Theintroductionofreactivespecies,evaporationofsolidswithintheprocesschamber,andtheuseofmonitorstoprovidein-processmeasurementofopticalcharacteristicsandthicknessesofcoatingsareordinarymodificationsoftheprocess.  c.PackCementationisasurfacemodificationcoatingoroverlaycoatingprocesswhereinasubstrateisimmersedinapowdermixture(apack),thatconsistsof:    1.Themetallicpowdersthataretobedeposited(usuallyaluminum,chromium,siliconorcombinationsthereof);    2.Anactivator(normallyahalidesalt);and `     3.Aninertpowder,mostfrequentlyalumina.  Note: Thesubstrateandpowdermixtureiscontainedwithinaretortwhichisheatedto H&" between1,030K(757$C)to1,375K(1,102$C)forsufficienttimetodepositthecoating. ((!$   d.PlasmaSprayingisanoverlaycoatingprocesswhereinagun(spraytorch)whichproducesandcontrolsaplasmaacceptspowderorwirecoatingmaterials,meltsthemandpropels -`'* themtowardsasubstrate,whereonanintegrallybondedcoatingisformed.Plasmasprayingconstituteseitherlowpressureplasmasprayingorhighvelocityplasmaspraying.  Note1: Lowpressuremeanslessthanambientatmosphericpressure.     Note2: Highvelocityreferstonozzle-exitgasvelocityexceeding750m/scalculatedat `  293K(20$C)at0.1MPa. @    e.SlurryDepositionisasurfacemodificationcoatingoroverlaycoatingprocesswhereinametallicorceramicpowderwithanorganicbinderissuspendedinaliquidandisappliedtoasubstratebyeitherspraying,dippingorpainting,subsequentairorovendrying,andheattreatmenttoobtainthedesiredcoating.̀  f.SputterDepositionisanoverlaycoatingprocessbasedonamomentumtransferphenomenon,whereinpositiveionsareacceleratedbyanelectricfieldtowardsthesurfaceofatarget(coatingmaterial).Thekineticenergyoftheimpactingionsissufficienttocausetargetsurfaceatomstobereleasedanddepositedonanappropriatelypositionedsubstrate.  Note1: TheTablerefersonlytotriode,magnetronorreactivesputterdepositionwhichis ((!$ usedtoincreaseadhesionofthecoatingandrateofdepositionandtoradiofrequency(RF)augmentedsputterdepositionusedtopermitvaporizationofnon-metalliccoatingmaterials. -`'*   Note2: Low-energyionbeams(lessthan5keV)canbeusedtoactivatethedeposition. h   g.IonImplantationisasurfacemodificationcoatingprocessinwhichtheelementtobealloyedisionized,acceleratedthroughapotentialgradientandimplantedintothesurfaceregionofthesubstrate.Thisincludesprocessesinwhichionimplantationisperformedsimultaneouslywithelectronbeamphysicalvapordepositionorsputterdeposition. AccompanyingTechnicalInformationtoTableonDepositionTechniques:  h 1."Technology"forpretreatmentsofthesubstrateslistedintheTable,asfollows:  a.Chemicalstrippingandcleaningbathcycleparameters,asfollows:    1.Bathcomposition;     a.Fortheremovalofoldordefectivecoatingscorrosionproductorforeigndeposits;     b.Forpreparationofvirginsubstrates;    2.Timeinbath; -`'* Ї    3.Temperatureofbath;    4.Numberandsequencesofwashcycles;  b.Visualandmacroscopiccriteriaforacceptanceofthecleanedpart;  c.Heattreatmentcycleparameters,asfollows:    1.Atmosphereparameters,asfollows:     a.Compositionoftheatmosphere;     b.Pressureoftheatmosphere;    2.Temperatureforheattreatment;    3.Timeofheattreatment;  d.Substratesurfacepreparationparameters,asfollows:    1.Gritblastingparameters,asfollows: -`'*      a.Gritcomposition;     b.Gritsizeandshape;     c.Gritvelocity;    2.Timeandsequenceofcleaningcycleaftergritblast;    3.Surfacefinishparameters;    4.Applicationofbinderstopromoteadhesion;  e.Maskingtechniqueparameters,asfollows:    1.Materialofmask;    2.Locationofmask;2."Technology"forinsituqualityassurancetechniquesforevaluationofthecoatingprocesseslistedintheTable,asfollows:  a.Atmosphereparameters,asfollows: -`'* Ї    1.Compositionoftheatmosphere;    2.Pressureoftheatmosphere;  b.Timeparameters;  c.Temperatureparameters;  d.Thicknessparameters;  e.Indexofrefractionparameters;  f.Controlofcomposition;3."Technology"forpostdepositiontreatmentsofthecoatedsubstrateslistedintheTable,asfollows:  a.Shotpeeningparameters,asfollows:    1.Shotcomposition;    2.Shotsize; -`'* Ї    3.Shotvelocity;  b.Postshotpeeningcleaningparameters;  c.Heattreatmentcycleparameters,asfollows:    1.Atmosphereparameters,asfollows:     a.Compositionoftheatmosphere;     b.Pressureoftheatmosphere;    2.Time-temperaturecycles;  d.Postheattreatmentvisualandmacroscopiccriteriaforacceptanceofthecoatedsubstrates;4."Technology"forqualityassurancetechniquesfortheevaluationofthecoatedsubstrateslistedintheTable,asfollows:  a.Statisticalsamplingcriteria; -`'*   b.Microscopiccriteriafor:    1.Magnification;    2.Coatingthickness,uniformity;    3.Coatingintegrity;    4.Coatingcomposition;    5.Coatingandsubstratesbonding;    6.Microstructuraluniformity.  c.Criteriaforopticalpropertiesassessment(measuredasafunctionofwavelength):    1.Reflectance;    2.Transmission;    3.Absorption; -`'*     4.Scatter;5."Technology"andparametersrelatedtospecificcoatingandsurfacemodificationprocesseslistedintheTable,asfollows:  a.ForChemicalVaporDeposition(CVD):    1.Coatingsourcecompositionandformulation;    2.Carriergascomposition;    3.Substratetemperature;    4.Time-temperature-pressurecycles;    5.Gascontrolandpartmanipulation;  b.ForThermalEvaporation-PhysicalVaporDeposition(PVD):    1.Ingotorcoatingmaterialsourcecomposition;    2.Substratetemperature; -`'* Ї    3.Reactivegascomposition;    4.Ingotfeedrateormaterialvaporizationrate;    5.Time-temperature-pressurecycles;    6.Beamandpartmanipulation;    7."Laser"parameters,asfollows:     a.Wavelength;     b.Powerdensity;     c.Pulselength;     d.Repetitionratio;     e.Source;  c.ForPackCementation: -`'*     1.Packcompositionandformulation;    2.Carriergascomposition;    3.Time-temperature-pressurecycles;  d.ForPlasmaSpraying:    1.Powdercomposition,preparationandsizedistributions;    2.Feedgascompositionandparameters;    3.Substratetemperature;    4.Gunpowerparameters;    5.Spraydistance;    6.Sprayangle;    7.Covergascomposition,pressureandflowrates; -`'*     8.Guncontrolandpartmanipulation;  e.ForSputterDeposition:    1.Targetcompositionandfabrication;    2.Geometricalpositioningofpartandtarget;    3.Reactivegascomposition;    4.Electricalbias;    5.Time-temperature-pressurecycles;    6.Triodepower;    7.Partmanipulation;  f.ForIonImplantation:    1.Beamcontrolandpartmanipulation; -`'*     2.Ionsourcedesigndetails;    3.Controltechniquesforionbeamanddepositionrateparameters;    4.Time-temperature-pressurecycles.  g.ForIonPlating:    1.Beamcontrolandpartmanipulation;    2.Ionsourcedesigndetails;    3.Controltechniquesforionbeamanddepositionrateparameters;    4.Time-temperature-pressurecycles;    5.Coatingmaterialfeedrateandvaporizationrate;    6.Substratetemperature;    7.Substratebiasparameters. -`'* Ї  9.InSupplementNo.1topart774(theCommerceControlList),Category3Electronics,ExportControlClassificationNumbers(ECCNs),areamended:  a.ByrevisingtheListofItemsControlledsectionforECCNs3A001,3A002,3A991,3B001,3B991,3C002and3E001;  b.ByaddinganewECCN3C992;  c.ByrevisingtheLicenseExceptionssectionandtheListofItemsControlledsectionfor3E002,toreadasfollows: 3A001Electroniccomponents,asfollows(seeListofItemsControlled).  h @$***** ListofItemsControlled     Unit:Number `   RelatedControls:Seealso3A101,3A201,and3A991  @ 0  RelatedDefinitions:Forthepurposesofintegratedcircuitsin3A001.a.1,5x103Gy(Si) "  =5x105Rads(Si);5x106Gy(Si)/s=5x108Rads(Si)/s.h$ (#(#   Items: H&" a.Generalpurposeintegratedcircuits,asfollows:  Note1: Thecontrolstatusofwafers(finishedorunfinished),inwhichthefunctionhas -`'* beendetermined,istobeevaluatedagainsttheparametersof3A001.a.  Note2: Integratedcircuitsincludethefollowingtypes: (      "Monolithicintegratedcircuits";    "Hybridintegratedcircuits";    "Multichipintegratedcircuits";    "Filmtypeintegratedcircuits",includingsilicon-on-sapphireintegratedcircuits;    "Opticalintegratedcircuits".  a.1.Integratedcircuits,designedorratedasradiationhardenedtowithstandanyofthefollowing:    a.1.a.Atotaldoseof5x103Gy(Si),orhigher;or `     a.1.b.Adoserateupsetof5x106Gy(Si)/s,orhigher; "    a.2.Integratedcircuitsdescribedin3A001.a.3to3A001.a.10or3A001.a.12,electricalerasableprogrammableread-onlymemories(EEPROMs),flashmemoriesandstaticrandom-accessmemories(SRAMs),havinganyofthefollowing:    a.2.a.Ratedforoperationatanambienttemperatureabove398K(125$C); -`'* Ї    a.2.b.Ratedforoperationatanambienttemperaturebelow218K(-55$C);or h     a.2.c.Ratedforoperationovertheentireambienttemperaturerangefrom218K(-55$C)to398K(125$C);     Note: 3A001.a.2doesnotapplytointegratedcircuitsforcivilautomobilesorrailway `  trainapplications.  a.3."Microprocessormicrocircuits","micro-computermicrocircuits"andmicrocontrollermicrocircuits,havinganyofthefollowingcharacteristics:  Note: 3A001.a.3includesdigitalsignalprocessors,digitalarrayprocessorsanddigital  coprocessors.    a.3.a.A"compositetheoreticalperformance"("CTP")of260milliontheoreticaloperationspersecond(Mtops)ormoreandanarithmeticlogicunitwithanaccesswidthof32bitormore;    a.3.b.Manufacturedfromacompoundsemiconductorandoperatingataclockfrequencyexceeding40MHz;or *#&     a.3.c.Morethanonedataorinstructionbusorserialcommunicationportfor -`'* externalinterconnectioninaparallelprocessorwithatransferrateexceeding2.5Mbyte/s;  a.4.Storageintegratedcircuitsmanufacturedfromacompoundsemiconductor;  a.5.Analog-to-digitalanddigital-to-analogconverterintegratedcircuits,asfollows:    a.5.a.Analog-to-digitalconvertershavinganyofthefollowing:     a.5.a.1.Aresolutionof8bitormore,butlessthan12bit,withatotalconversiontimetomaximumresolutionoflessthan10ns;     a.5.a.2.Aresolutionof12bitwithatotalconversiontimetomaximumresolutionoflessthan200ns;or       a.5.a.3.Aresolutionofmorethan12bitwithatotalconversiontimetomaximumresolutionoflessthan2s;    a.5.b.Digital-to-analogconverterswitharesolutionof12bitormore,anda"settlingtime"oflessthan10ns;  a.6.Electro-opticaland"opticalintegratedcircuits"designedfor"signalprocessing"havingallofthefollowing: -`'* Ї    a.6.a.Oneormorethanoneinternal"laser"diode;    a.6.b.Oneormorethanoneinternallightdetectingelement;and (      a.6.c.Opticalwaveguides;  a.7.Fieldprogrammablegatearrayshavinganyofthefollowing:    a.7.a.Anequivalentusablegatecountofmorethan30,000(2inputgates);or h     a.7.b.Atypical"basicgatepropagationdelaytime"oflessthan0.4ns;  a.8.Fieldprogrammablelogicarrayshavinganyofthefollowing:    a.8.a.Anequivalentusablegatecountofmorethan30,000(2inputgates);or  @     a.8.b.Atogglefrequencyexceeding133MHz;  a.9.Neuralnetworkintegratedcircuits;  a.10.Customintegratedcircuitsforwhichthefunctionisunknown,orthecontrolstatusoftheequipmentinwhichtheintegratedcircuitswillbeusedisunknowntothemanufacturer, -`'* havinganyofthefollowing:    a.10.a.Morethan208terminals;    a.10.b.Atypical"basicgatepropagationdelaytime"oflessthan0.35ns;or       a.10.c.Anoperatingfrequencyexceeding3GHz;  a.11.Digitalintegratedcircuits,otherthanthosedescribedin3A001.a.3to3A001.a.10and3A001.a.12,baseduponanycompoundsemiconductorandhavinganyofthefollowing:    a.11.a.Anequivalentgatecountofmorethan3,000(2inputgates);or      a.11.b.Atogglefrequencyexceeding1.2GHz;  a.12.FastFourierTransform(FFT)processorshavinganyofthefollowing:    a.12.a.Aratedexecutiontimefora1,024pointcomplexFFToflessthan1ms;    a.12.b.AratedexecutiontimeforanN-pointcomplexFFTofotherthan1,024pointsoflessthanNlog2N/10,240ms,whereNisthenumberofpoints;or +%(  -`'*     a.12.c.Abutterflythroughputofmorethan5.12MHz;b.Microwaveormillimeterwavecomponents,asfollows:  b.1.Electronicvacuumtubesandcathodes,asfollows:  Note: 3A001.b.1doesnotcontroltubesdesignedorratedtooperateintheITUallocated `  bandsatfrequenciesnotexceeding31GHz.    b.1.a.Travelingwavetubes,pulsedorcontinuouswave,asfollows:     b.1.a.1.Operatingatfrequencieshigherthan31GHz;     b.1.a.2.HavingacathodeheaterelementwithaturnontimetoratedRFpoweroflessthan3seconds;     b.1.a.3.Coupledcavitytubes,orderivativesthereof,withan"instantaneousbandwidth"ofmorethan7%orapeakpowerexceeding2.5kW;     b.1.a.4.Helixtubes,orderivativesthereof,withanyofthefollowingcharacteristics:       b.1.a.4.a.An"instantaneousbandwidth"ofmorethanoneoctave, -`'* andaveragepower(expressedinkW)timesfrequency(expressedinGHz)ofmorethan0.5;       b.1.a.4.b.An"instantaneousbandwidth"ofoneoctaveorless,andaveragepower(expressedinkW)timesfrequency(expressedinGHz)ofmorethan1;or          b.1.a.4.c.Being"spacequalified";    b.1.b.Crossed-fieldamplifiertubeswithagainofmorethan17dB;    b.1.c.Impregnatedcathodesdesignedforelectronictubes,withanyofthefollowing:     b.1.c.1.Aturnontimetoratedemissionoflessthan3seconds;or       b.1.c.2.Producingacontinuousemissioncurrentdensityatratedoperatingconditionsexceeding5A/cm2; "    b.2.Microwaveintegratedcircuitsormoduleshavingallofthefollowing:    b.2.a.Containing"monolithicintegratedcircuits";and    b.2.b.Operatingatfrequenciesabove3GHz; -`'* Ї  Note: 3A001.b.2doesnotcontrolcircuitsormodulesforequipmentdesignedorratedto h operateintheITUallocatedbandsatfrequenciesnotexceeding31GHz.  b.3.Microwavetransistorsratedforoperationatfrequenciesexceeding31GHz;  b.4.Microwavesolidstateamplifiers,havinganyofthefollowing:    b.4.a.Operatingfrequenciesexceeding10.5GHzandan"instantaneousbandwidth"ofmorethanhalfanoctave;or h     b.4.b.Operatingfrequenciesexceeding31GHz;  b.5.Electronicallyormagneticallytunableband-passorband-stopfiltershavingmorethan5tunableresonatorscapableoftuningacrossa1.5:1frequencyband(Fmax/Fmin)inlessthan ` 10shavinganyofthefollowing:    b.5.a.Aband-passbandwidthofmorethan0.5%ofcenterfrequency;or h$      b.5.b.Aband-stopbandwidthoflessthan0.5%ofcenterfrequency;  b.6.Microwave"assemblies"capableofoperatingatfrequenciesexceeding31GHz; -`'*   b.7.Mixersandconvertersdesignedtoextendthefrequencyrangeofequipmentdescribedin3A002.c,3A002.eor3A002.fbeyondthelimitsstatedtherein;  b.8.Microwavepoweramplifierscontainingtubescontrolledby3A001.bandhavingallofthefollowing:  b.8.a.Operatingfrequenciesabove3GHz;  b.8.b.Anaverageoutputpowerdensityexceeding80W/kg;and h   b.8.c.Avolumeoflessthan400cm3; (   Note: 3A001.b.8doesnotcontrolequipmentdesignedorratedforoperationinanITU  allocatedband.c.Acousticwavedevices,asfollows,andspeciallydesignedcomponentstherefor:  c.1.Surfaceacousticwaveandsurfaceskimming(shallowbulk)acousticwavedevices(i.e.,"signalprocessing"devicesemployingelasticwavesinmaterials),havinganyofthefollowing:    c.1.a.Acarrierfrequencyexceeding2.5GHz; -`'* Ї    c.1.b.Acarrierfrequencyexceeding1GHz,butnotexceeding2.5GHz,andhavinganyofthefollowing:     c.1.b.1.Afrequencyside-loberejectionexceeding55dB;     c.1.b.2.Aproductofthemaximumdelaytimeandthebandwidth(timeinsandbandwidthinMHz)ofmorethan100;     c.1.b.3.Abandwidthgreaterthan250MHz;or h      c.1.b.4.Adispersivedelayofmorethan10s;or (     c.1.c.Acarrierfrequencyof1GHzorless,havinganyofthefollowing:     c.1.c.1.Aproductofthemaximumdelaytimeandthebandwidth(timeinsandbandwidthinMHz)ofmorethan100;     c.1.c.2.Adispersivedelayofmorethan10s;or h$       c.1.c.3.Afrequencyside-loberejectionexceeding55dBandabandwidthgreaterthan50MHz;  c.2.Bulk(volume)acousticwavedevices(i.e.,"signalprocessing"devicesemployingelasticwaves)thatpermitthedirectprocessingofsignalsatfrequenciesexceeding1GHz; -`'* Ї  c.3.Acoustic-optic"signalprocessing"devicesemployinginteractionbetweenacousticwaves(bulkwaveorsurfacewave)andlightwavesthatpermitthedirectprocessingofsignalsorimages,includingspectralanalysis,correlationorconvolution;d.Electronicdevicesandcircuitscontainingcomponents,manufacturedfrom"superconductive"materialsspeciallydesignedforoperationattemperaturesbelowthe"criticaltemperature"ofatleastoneofthe"superconductive"constituents,withanyofthefollowing:  d.1.Electromagneticamplification:    d.1.a.Atfrequenciesequaltoorlessthan31GHzwithanoisefigureoflessthan0.5dB;or      d.1.b.Atfrequenciesexceeding31GHz;  d.2.Currentswitchingfordigitalcircuitsusing"superconductive"gateswithaproductofdelaytimepergate(inseconds)andpowerdissipationpergate(inwatts)oflessthan1014J; h$  or H&"   d.3.FrequencyselectionatallfrequenciesusingresonantcircuitswithQ-valuesexceeding10,000; -`'* e.Highenergydevices,asfollows:  e.1.Batteriesandphotovoltaicarrays,asfollows:  Note: 3A001.e.1doesnotcontrolbatterieswithvolumesequaltoorlessthan27cm3   (e.g.,standardC-cellsorR14batteries).    e.1.a.Primarycellsandbatterieshavinganenergydensityexceeding480Wh/kgandratedforoperationinthetemperaturerangefrombelow243K(-30$C)toabove343K(70$ h C);    e.1.b.Rechargeablecellsandbatterieshavinganenergydensityexceeding150Wh/kgafter75charge/dischargecyclesatadischargecurrentequaltoC/5hours(Cbeingthenominalcapacityinamperehours)whenoperatinginthetemperaturerangefrombelow253K(-20$C)toabove333K(60$C);  @   TechnicalNote: Energydensityisobtainedbymultiplyingtheaveragepowerinwatts h$  (averagevoltageinvoltstimesaveragecurrentinamperes)bythedurationofthedischargeinhoursto75%oftheopencircuitvoltagedividedbythetotalmassofthecell(orbattery)inkg.  e.1.c."Spacequalified"andradiationhardenedphotovoltaicarrayswithaspecificpowerexceeding160W/m2atanoperatingtemperatureof301K(28$C)underatungstenillumination -`'* of1kW/m2at2,800K(2,527$C); h   e.2.Highenergystoragecapacitors,asfollows:  N.B.: Seealso3A201.a.       e.2.a.Capacitorswitharepetitionrateoflessthan10Hz(singleshotcapacitors)havingallofthefollowing:     e.2.a.1.Avoltageratingequaltoormorethan5kV;     e.2.a.2.Anenergydensityequaltoormorethan250J/kg;and       e.2.a.3.Atotalenergyequaltoormorethan25kJ;    e.2.b.Capacitorswitharepetitionrateof10Hzormore(repetitionratedcapacitors)havingallofthefollowing:     e.2.b.1.Avoltageratingequaltoormorethan5kV;     e.2.b.2.Anenergydensityequaltoormorethan50J/kg; -`'*      e.2.b.3.Atotalenergyequaltoormorethan100J;and h      e.2.b.4.Acharge/dischargecyclelifeequaltoormorethan10,000;  e.3."Superconductive"electromagnetsandsolenoidsspeciallydesignedtobefullychargedordischargedinlessthanonesecond,havingallofthefollowing:  N.B.: Seealso3A201.b.       e.3.a.Energydeliveredduringthedischargeexceeding10kJinthefirstsecond;    e.3.b.Innerdiameterofthecurrentcarryingwindingsofmorethan250mm;and      e.3.c.Ratedforamagneticinductionofmorethan8Tor"overallcurrentdensity"inthewindingofmorethan300A/mm2;  @   Note: 3A001.e.3doesnotcontrol"superconductive"electromagnetsorsolenoids h$  speciallydesignedforMagneticResonanceImaging(MRI)medicalequipment.f.Rotaryinputtypeshaftabsolutepositionencodershavinganyofthefollowing:  f.1.Aresolutionofbetterthan1partin265,000(18bitresolution)offullscale;or -`'* Ї  f.2.Anaccuracybetterthan2.5secondsofarc. 3A002Generalpurposeelectronicequipment,asfollows(seeListofItemsControlled).    @$***** ListofItemsControlled      Unit:Number H   RelatedControls:Seealso3A202and3A992 (   RelatedDefinitions:N/A    Items:  a.Recordingequipment,asfollows,andspeciallydesignedtesttapetherefor:  a.1.Analoginstrumentationmagnetictaperecorders,includingthosepermittingtherecordingofdigitalsignals(e.g.,usingahighdensitydigitalrecording(HDDR)module),havinganyofthefollowing:    a.1.a.Abandwidthexceeding4MHzperelectronicchannelortrack; -`'*     a.1.b.Abandwidthexceeding2MHzperelectronicchannelortrackandhavingmorethan42tracks;or H     a.1.c.Atimedisplacement(base)error,measuredinaccordancewithapplicableIRIGorEIAdocuments,oflessthan0.1s;  Note: Analogmagnetictaperecordersspeciallydesignedforcivilianvideopurposesare @  notconsideredtobeinstrumentationtaperecorders.  a.2.Digitalvideomagnetictaperecordershavingamaximumdigitalinterfacetransferrateexceeding360Mbit/s;  Note: 3A002.a.2doesnotcontroldigitalvideomagnetictaperecordersspecially  designedfortelevisionrecordingusingasignalformat,whichmayincludeacompressedsignalformat,standardizedorrecommendedbytheITU,theIEC,theSMPTE,theEBUortheIEEEforciviltelevisionapplications.  a.3.Digitalinstrumentationmagnetictapedatarecordersemployinghelicalscantechniquesorfixedheadtechniques,havinganyofthefollowing:    a.3.a.Amaximumdigitalinterfacetransferrateexceeding175Mbit/s;or +%(  -`'*     a.3.b.Being"spacequalified";  Note: 3A002.a.3doesnotcontrolanalogmagnetictaperecordersequippedwithHDDR (  conversionelectronicsandconfiguredtorecordonlydigitaldata.  a.4.Equipment,havingamaximumdigitalinterfacetransferrateexceeding175Mbit/s,designedtoconvertdigitalvideomagnetictaperecordersforuseasdigitalinstrumentationdatarecorders;  a.5.Waveformdigitizersandtransientrecordershavingallofthefollowing:  N.B.: Seealso3A202.      a.5.a.Digitizingratesequaltoormorethan200millionsamplespersecondandaresolutionof10bitsormore;and  @     a.5.b.Acontinuousthroughputof2Gbit/sormore;  TechnicalNote: Forthoseinstrumentswithaparallelbusarchitecture,thecontinuous ((!$ throughputrateisthehighestwordratemultipliedbythenumberofbitsinaword.Continuousthroughputisthefastestdataratetheinstrumentcanoutputtomassstoragewithoutthelossofanyinformationwhilesustainingthesamplingrateandanalog-to-digitalconversion. -`'* Їb."Frequencysynthesizer","assemblies"havinga"frequencyswitchingtime"fromoneselectedfrequencytoanotheroflessthan1ms;c."Signalanalyzers",asfollows:  c.1."Signalanalyzers"capableofanalyzingfrequenciesexceeding31GHz;  c.2."Dynamicsignalanalyzers"havinga"real-timebandwidth"exceeding25.6kHz;  Note: 3A002.c.2doesnotcontrolthose"dynamicsignalanalyzers"usingonlyconstant H percentagebandwidthfilters(alsoknownasoctaveorfractionaloctavefilters).  TechnicalNote: Constantpercentagebandwidthfiltersarealsoknownasoctaveor  fractionaloctavefilters.d.Frequencysynthesizedsignalgeneratorsproducingoutputfrequencies,theaccuracyandshorttermandlongtermstabilityofwhicharecontrolled,derivedfromordisciplinedbytheinternalmasterfrequency,andhavinganyofthefollowing:  d.1.Amaximumsynthesizedfrequencyexceeding31GHz;  d.2.A"frequencyswitchingtime"fromoneselectedfrequencytoanotheroflessthan1 -`'* ms;or h   d.3.Asinglesideband(SSB)phasenoisebetterthan-(126+20log10F-20log10f)in (  dBc/Hz,whereFistheoff-setfromtheoperatingfrequencyinHzandfistheoperatingfrequencyinMHz;  Note: 3A002.ddoesnotcontrolequipmentinwhichtheoutputfrequencyiseither @  producedbytheadditionorsubtractionoftwoormorecrystaloscillatorfrequencies,orbyanadditionorsubtractionfollowedbyamultiplicationoftheresult.e.Networkanalyzerswithamaximumoperatingfrequencyexceeding40GHz;f.Microwavetestreceivershavingallofthefollowing:  f.1.Amaximumoperatingfrequencyexceeding40GHz;and  @   f.2.Beingcapableofmeasuringamplitudeandphasesimultaneously;g.Atomicfrequencystandardshavinganyofthefollowing:  g.1.Long-termstability(aging)less(better)than1x10-11/month;or +%(  -`'*   g.2.Being"spacequalified".  Note: 3A002.g.1doesnotcontrolnon-"spacequalified"rubidiumstandards. (   3A991Electronicdevicesandcomponentsnotcontrolledby3A001.    @$***** ListofItemsControlled      Unit:Equipmentinnumber H   RelatedControls:N/A (   RelatedDefinitions:N/A    Items:  a."Microprocessormicrocircuits","microcomputermicrocircuits",andmicrocontrollermicrocircuitshavingaclockfrequencyexceeding25MHz;b.Storageintegratedcircuits,asfollows:  b.1.Electricalerasableprogrammableread-onlymemories(EEPROMs)withastoragecapacity; -`'*     b.1.a.Exceeding16Mbitsperpackageforflashmemorytypes;or x  h     b.1.b.ExceedingeitherofthefollowinglimitsforallotherEEPROMtypes:     b.1.b.1.Exceeding1Mbitperpackage;or        b.1.b.2.Exceeding256kbitperpackageandamaximumaccesstimeoflessthan80ns;  b.2.Staticrandomaccessmemories(SRAMs)withastoragecapacity:    b.2.a.Exceeding1Mbitperpackage;or      b.2.b.Exceeding256kbitperpackageandamaximumaccesstimeoflessthan25ns;c.Fieldprogrammablelogicarrayshavingeitherofthefollowing:  c.1.Anequivalentgatecountofmorethan5000(2inputgates);or ((!$   c.2.Atogglefrequencyexceeding100MHz; -`'* d.Customintegratedcircuitsforwhicheitherthefunctionisunknown,orthecontrolstatusoftheequipmentinwhichtheintegratedcircuitswillbeusedisunknowntothemanufacturer,havinganyofthefollowing:  d.1.Morethan144terminals;or     d.2.Atypical"basicpropagationdelaytime"oflessthan0.4ns.e.Travellingwavetubes,pulsedorcontinuouswave,asfollows:  e.1.Coupledcavitytubes,orderivativesthereof;  e.2.Helixtubes,orderivativesthereof,withanyofthefollowing:     e.2.a.1.An"instantaneousbandwidth"ofhalfanoctaveormore;and  @      e.2.a.2.Theproductoftheratedaverageoutputpower(expressedinkW)andthemaximumoperatingfrequency(expressedinGHz)ofmorethan0.2;     e.2.b.1An"instantaneousbandwidth"oflessthanhalfanoctave;and *#&      e.2.b.2.Theproductoftheratedaverageoutputpower(expressedinkW) -`'* andthemaximumoperatingfrequency(expressedinGHz)ofmorethan0.4;f.Flexiblewaveguidesdesignedforuseatfrequenciesexceeding40GHz;g.Surfaceacousticwaveandsurfaceskimming(shallowbulk)acousticwavedevices(i.e.,"signalprocessing"devicesemployingelasticwavesinmaterials),havingeitherofthefollowing:  g.1.Acarrierfrequencyexceeding1GHz;or h   g.2.Acarrierfrequencyof1GHzorless;and (     g.2.a.Afrequencyside-loberejectionexceeding55dB;    g.2.b.Aproductofthemaximumdelaytimeandbandwidth(timeinmicrosecondsandbandwidthinMHz)ofmorethan100;or "      g.2.c.Adispersivedelayofmorethan10microseconds.h.Batteries,asfollows:  Note: 3A991.hdoesnotcontrolbatterieswithvolumesequaltoorlessthan26cm3(e.g., -`'* standardC-cellsorUM-2batteries).  h.1.Primarycellsandbatterieshavinganenergydensityexceeding350Wh/kgandratedforoperationinthetemperaturerangefrombelow243K(-30$C)toabove343K(70$C);     h.2.Rechargeablecellsandbatterieshavinganenergydensityexceeding150Wh/kgafter75charge/dischargecyclesatadischargecurrentequaltoC/5hours(Cbeingthenominalcapacityinamperehours)whenoperatinginthetemperaturerangefrombelow253K(-20$C)   toabove333K(60$C); h   TechnicalNote: Energydensityisobtainedbymultiplyingtheaveragepowerinwatts ( (averagevoltageinvoltstimesaveragecurrentinamperes)bythedurationofthedischargeinhoursto75percentoftheopencircuitvoltagedividedbythetotalmassofthecell(orbattery)inkg.i."Superconductive"electromagnetsorsolenoidsspeciallydesignedtobefullychargedordischargedinlessthanoneminute,havingallofthefollowing:  Note: 3A991.idoesnotcontrol"superconductive"electromagnetsorsolenoidsdesigned ((!$ forMagneticResonanceImaging(MRI)medicalequipment.  i.1.Maximumenergydeliveredduringthedischargedividedbythedurationofthe -`'* dischargeofmorethan500kJperminute;  i.2.Innerdiameterofthecurrentcarryingwindingsofmorethan250mm;and (    i.3.Ratedforamagneticinductionofmorethan8Tor"overallcurrentdensity"inthewindingofmorethan300A/mm2. `  j.  Circuitsorsystemsforelectromagneticenergystorage,containingcomponents   manufacturedfrom"superconductive"materialsspeciallydesignedforoperationattemperaturesbelowthe"criticaltemperature"ofatleastoneoftheir"superconductive"constituents,havingallofthefollowing:  j.1.Resonantoperatingfrequenciesexceeding1MHz;  j.2.Astoredenergydensityof1MJ/M3ormore;and  @   j.3.Adischargetimeoflessthan1ms;k.Hydrogen/hydrogen-isotopethyratronsofceramic-metalconstructionandrateforapeakcurrentof500Aormore;l.Digitalintegratedcircuitsbasedonanycompoundsemiconductorhavinganequivalentgate -`'* countofmorethan300(2inputgates). 3B001Equipmentforthemanufacturingofsemiconductordevicesormaterialsand (  speciallydesignedcomponentsandaccessoriestherefor.    @$***** ListofItemsControlled  h   Unit:Number (   RelatedControls:Seealso3B991    RelatedDefinitions:N/A    Items: ` a."Storedprogramcontrolled"equipmentdesignedforepitaxialgrowth,asfollows:  a.1.Equipmentcapableofproducingalayerthicknessuniformtolessthan2.5%acrossadistanceof75mmormore;  a.2.Metalorganicchemicalvapordeposition(MOCVD)reactorsspeciallydesignedforcompoundsemiconductorcrystalgrowthbythechemicalreactionbetweenmaterialscontrolled -`'* by3C003or3C004;  a.3.Molecularbeamepitaxialgrowthequipmentusinggasorsolidsources;b."Storedprogramcontrolled"equipmentdesignedforionimplantation,havinganyofthefollowing:  b.1.Abeamenergy(acceleratingvoltage)exceeding1MeV;  b.2.Beingspeciallydesignedandoptimizedtooperateatabeamenergy(acceleratingvoltageoflessthan2keV;  b.3.Directwritecapability;or    b.4.Beingcapableofhighenergyoxygenimplantintoaheatedsemiconductormaterial"substrate";c."Storedprogramcontrolled"anisotropicplasmadryetchingequipment,asfollows:  c.1.Equipmentwithcassette-to-cassetteoperationandload-locks,andhavinganyofthefollowing: -`'*     c.1.a.Magneticconfinement;or h     c.1.b.Electroncyclotronresonance(ECR);  c.2.Equipmentspeciallydesignedforequipmentcontrolledby3B001.eandhavinganyofthefollowing:  c.2.a.Magneticconfinement;or     c.2.b.ECR;d."Storedprogramcontrolled"plasmaenhancedCVDequipment,asfollows:  d.1.Equipmentwithcassette-to-cassetteoperationandload-locks,andhavinganyofthefollowing:    d.1.a.Magneticconfinement;or h$      d.1.b.ECR;  d.2.Equipmentspeciallydesignedforequipmentcontrolledby3B001.eandhavinganyofthefollowing: -`'* Ї    d.2.a.Magneticconfinement;or h     d.2.b.ECR;e."Storedprogramcontrolled"automaticloadingmulti-chambercentralwaferhandlingsystems,havingallofthefollowing:  e.1.Interfacesforwaferinputandoutput,towhichmorethantwopiecesofsemiconductorprocessingequipmentaretobeconnected;and h   e.2.Designedtoformanintegratedsysteminavacuumenvironmentforsequentialmultiplewaferprocessing;  Note: 󀀜3B001.edoesnotcontrolautomaticroboticwaferhandlingsystemsnotdesigned ` tooperateinavacuumenvironment.f."Storedprogramcontrolled"lithographyequipment,asfollows:  f.1.Alignandexposestepandrepeat(directsteponwafer)orstepandscan(scanner)equipmentforwaferprocessingusingphoto-opticalorX-raymethods,havinganyofthefollowing: -`'*     f.1.a.Alightsourcewavelengthshorterthan350nm;or h     f.1.b.Capableofproducingapatternwithaminimumresolvablefeaturesizeof0.5morless;  Note: Theminimumresolvablefeaturesizeiscalculatedbythefollowingformula: `  ̀(anexposurelightsourcewavelengthinm)x(Kfactor)MRF=̀numericalaperturewheretheKfactor=0.7.MRF=minimumresolvablefeaturesize.  f.2.Equipmentspeciallydesignedformaskmakingorsemiconductordeviceprocessingusingdeflectedfocussedelectronbeam,ionbeamor"laser"beam,havinganyofthefollowing:  f.2.a.Aspotsizesmallerthan0.2m;  f.2.b.Beingcapableofproducingapatternwithafeaturesizeoflessthan1m;or *#&   f.2.c.Anoverlayaccuracyofbetterthan0.20m(3sigma); -`'* Їg.Masksandreticlesdesignedforintegratedcircuitscontrolledby3A001;h.Multi-layermaskswithaphaseshiftlayer. 3B991Equipmentnotcontrolledby3B001forthemanufactureofelectroniccomponents `  andmaterials,andspeciallydesignedcomponentsandaccessoriestherefor. @$***** ListofItemsControlled  (   Unit:Equipmentinnumber    RelatedControls:N/A `   RelatedDefinitions:N/A  @   Items: "  a.Equipmentspeciallydesignedforthemanufactureofelectrontubes,opticalelementsandspeciallydesignedcomponentsthereforcontrolledby3A001or3A991;b.Equipmentspeciallydesignedforthemanufactureofsemiconductordevices,integratedcircuitsand"assemblies",asfollows,andsystemsincorporatingorhavingthecharacteristicsof -`'* suchequipment:  Note: 3B991.balsocontrolsequipmentusedormodifiedforuseinthemanufactureof (  otherdevices,suchasimagingdevices,electro-opticaldevices,acoustic-wavedevices.  b.1.Equipmentfortheprocessingofmaterialsforthemanufactureofdevicesandcomponentsasspecifiedintheheadingof3B991.b,asfollows:  Note: 3B991doesnotcontrolquartzfurnacetubes,furnaceliners,paddles,boats(except h speciallydesignedcagedboats),bubblers,cassettesorcruciblesspeciallydesignedfortheprocessingequipmentcontrolledby3B991.b.1.    b.1.a.Equipmentforproducingpolycrystallinesiliconandmaterialscontrolledby3C001;    b.1.b.EquipmentspeciallydesignedforpurifyingorprocessingIII/VandII/VIsemiconductormaterialscontrolledby3C001,3C002,3C003,or3C004,exceptcrystalpullers,forwhichsee3B991.b.1.cbelow;    b.1.c.Crystalpullersandfurnaces,asfollows:  Note: 3B991.b.1.cdoesnotcontroldiffusionandoxidationfurnaces. -`'* Ї     b.1.c.1.Annealingorrecrystallizingequipmentotherthanconstanttemperaturefurnacesemployinghighratesofenergytransfercapableofprocessingwafersatarateexceeding0.005m2perminute; (       b.1.c.2."Storedprogramcontrolled"crystalpullershavinganyofthefollowingcharacteristics:       b.1.c.2.a.Rechargeablewithoutreplacingthecruciblecontainer;       b.1.c.2.b.Capableofoperationatpressuresabove2.5x105Pa;or H        b.1.c.2.c.Capableofpullingcrystalsofadiameterexceeding100mm;    b.1.d."Storedprogramcontrolled"equipmentforepitaxialgrowthhavinganyofthefollowingcharacteristics:     b.1.d.1.Capableofproducingalayerthicknessuniformityacrossthewaferofequaltoorbetterthan+3.5%; ((!$      b.1.d.2.Rotationofindividualwafersduringprocessing;or +%(  -`'*     b.1.e.Molecularbeamepitaxialgrowthequipment;    b.1.f.Magneticallyenhanced"sputtering"equipmentwithspeciallydesignedintegralloadlockscapableoftransferringwafersinanisolatedvacuumenvironment;    b.1.g.Equipmentspeciallydesignedforionimplantation,ion-enhancedorphoto-enhanceddiffusion,havinganyofthefollowingcharacteristics:     b.1.g.1.Patterningcapability;     b.1.g.2.Beamenergy(acceleratingvoltage)exceeding200keV;     b.1.g.3Optimizedtooperateatabeamenergy(acceleratingvoltage)oflessthan10keV;or `      b.1.g.4.Capableofhighenergyoxygenimplantintoaheated"substrate";    b.1.h."Storedprogramcontrolled"equipmentfortheselectiveremoval(etching)bymeansofanisotropicdrymethods(e.g.,plasma),asfollows:     b.1.h.1.Batchtypeshavingeitherofthefollowing: -`'*        b.1.h.1.a.End-pointdetection,otherthanopticalemissionspectroscopytypes;or H        b.1.h.1.b.Reactoroperational(etching)pressureof26.66Paorless;    b.1.h.2.Singlewafertypeshavinganyofthefollowing:     b.1.h.2.a.End-pointdetection,otherthanopticalemissionspectroscopytypes;     b.1.h.2.b.Reactoroperational(etching)pressureof26.66Paorless;or       b.1.h.2.c.Cassette-to-cassetteandloadlockswaferhandling;̀ Notes: 1."Batchtypes"referstomachinesnotspeciallydesignedforproductionprocessingof "  singlewafers.Suchmachinescanprocesstwoormorewaferssimultaneouslywithcommonprocessparameters,e.g.,RFpower,temperature,etchgasspecies,flowrates.̀2."Singlewafertypes"referstomachinesspeciallydesignedforproductionprocessingofsinglewafers.Thesemachinesmayuseautomaticwaferhandlingtechniquestoloadasinglewaferintotheequipmentforprocessing.Thedefinitionincludesequipmentthatcanloadand -`'* processseveralwafersbutwheretheetchingparameters,e.g.,RFpowerorendpoint,canbeindependentlydeterminedforeachindividualwafer.    b.1.i."Chemicalvapordeposition"(CVD)equipment,e.g.,plasma-enhancedCVD(PECVD)orphoto-enhancedCVD,forsemiconductordevicemanufacturing,havingeitherofthefollowingcapabilities,fordepositionofoxides,nitrides,metalsorpolysilicon:     b.1.i.1."Chemicalvapordeposition"equipmentoperatingbelow105Pa;   or h      b.1.i.2.PECVDequipmentoperatingeitherbelow60Pa(450millitorr)orhavingautomaticcassette-to-cassetteandloadlockwaferhandling;̀ Note: 3B991.b.1.idoesnotcontrollowpressure"chemicalvapordeposition"(LPCVD) ` systemsorreactive"sputtering"equipment.    b.1.j.Electronbeamsystemsspeciallydesignedormodifiedformaskmakingorsemiconductordeviceprocessinghavinganyofthefollowingcharacteristics:     b.1.j.1.Electrostaticbeamdeflection;     b.1.j.2.Shaped,non-Gaussianbeamprofile; -`'* Ї     b.1.j.3.Digital-to-analogconversionrateexceeding3MHz;     b.1.j.4.Digital-to-analogconversionaccuracyexceeding12bit;or (       b.1.j.5.Target-to-beampositionfeedbackcontrolprecisionof1micrometerorfiner;̀ Note: 3B991.b.1.jdoesnotcontrolelectronbeamdepositionsystemsorgeneralpurpose   scanningelectronmicroscopes.    b.1.k.Surfacefinishingequipmentfortheprocessingofsemiconductorwafersasfollows:     b.1.k.1.Speciallydesignedequipmentforbacksideprocessingofwafersthinnerthan100micrometerandthesubsequentseparationthereof;or  @      b.1.k.2.Speciallydesignedequipmentforachievingasurfaceroughnessoftheactivesurfaceofaprocessedwaferwithatwo-sigmavalueof2micrometerorless,totalindicatorreading(TIR);̀ Note: 3B991.b.1.kdoesnotcontrolsingle-sidelappingandpolishingequipmentforwafer +%( surfacefinishing. -`'* Ї    b.1.l.Interconnectionequipmentwhichincludescommonsingleormultiplevacuumchambersspeciallydesignedtopermittheintegrationofanyequipmentcontrolledby3B991intoacompletesystem;    b.1.m."Storedprogramcontrolled"equipmentusing"lasers"fortherepairortrimmingof"monolithicintegratedcircuits"witheitherofthefollowingcharacteristics:    b.1.m.1.Positioningaccuracylessthan1micrometer;or       b.1.m.2.Spotsize(kerfwidth)lessthan3micrometer.  b.2.Masks,mask"substrates",mask-makingequipmentandimagetransferequipmentforthemanufactureofdevicesandcomponentsasspecifiedintheheadingof3B991,asfollows:̀ Note: Theterm"masks"referstothoseusedinelectronbeamlithography,X-raylithography,  @ andultravioletlithography,aswellastheusualultravioletandvisiblephoto-lithography.    b.2.a.Finishedmasks,reticlesanddesignstherefor,except:     b.2.a.1.Finishedmasksorreticlesfortheproductionofunembargoedintegratedcircuits;or +%(  -`'*      b.2.a.2.Masksorreticles,havingbothofthefollowingcharacteristics:       b.2.a.2.a.Theirdesignisbasedongeometriesof2.5micrometerormore;and          b.2.a.2.b.Thedesigndoesnotincludespecialfeaturestoaltertheintendedusebymeansofproductionequipmentor"software";    b.2.b.Mask"substrates"asfollows:     b.2.b.1.Hardsurface(e.g.,chromium,silicon,molybdenum)coated"substrates"(e.g.,glass,quartz,sapphire)forthepreparationofmaskshavingdimensionsexceeding125mmx125mm;or       b.2.b.2."Substrates"speciallydesignedforX-raymasks;    b.2.c.Equipment,otherthangeneralpurposecomputers,speciallydesignedforcomputeraideddesign(CAD)ofsemiconductordevicesorintegratedcircuits;    b.2.d.Equipmentormachines,asfollows,formaskorreticlefabrication:     b.2.d.1.Photo-opticalstepandrepeatcamerascapableofproducingarrays -`'* largerthan100mmx100mm,orcapableofproducingasingleexposurelargerthan6mmx6mmintheimage(i.e.,focal)plane,orcapableofproducinglinewidthsoflessthan2.5micrometerinthephotoresistonthe"substrate";     b.2.d.2.Maskorreticlefabricationequipmentusingionor"laser"beamlithographycapableofproducinglinewidthsoflessthan2.5micrometer;or `       b.2.d.3.Equipmentorholdersforalteringmasksorreticlesoraddingpelliclestoremovedefects;̀ Note: 3B991.b.2.d.1andb.2.d.2donotcontrolmaskfabricationequipmentusing ( photo-opticalmethodswhichwaseithercommerciallyavailablebeforethe1stJanuary,1980,orhasaperformancenobetterthansuchequipment.    b.2.e."Storedprogramcontrolled"equipmentfortheinspectionofmasks,reticlesorpellicleswith:     b.2.e.1.Aresolutionof0.25micrometerorfiner;and H&"      b.2.e.2.Aprecisionof0.75micrometerorfineroveradistanceinoneortwocoordinatesof63.5mmormore; -`'* Ѐ Note: 3B991.b.2.edoesnotcontrolgeneralpurposescanningelectronmicroscopesexcept h whenspeciallydesignedandinstrumentedforautomaticpatterninspection.    b.2.f.Alignandexposeequipmentforwaferproductionusingphoto-opticalorXraymethods,includingbothprojectionimagetransferequipmentandstepandrepeat(directsteponwafer)orstepandscan(scanner)equipment,capableofperforminganyofthefollowingfunctions:  Note: 3B991.b.2.fdoesnotcontrolphoto-opticalcontactandproximitymaskalignand h exposeequipmentorcontactimagetransferequipment.     b.2.f.1.Productionofapatternsizeoflessthan2.5micrometer;     b.2.f.2.Alignmentwithaprecisionfinerthan0.25micrometer(3sigma);     b.2.f.3.Machine-to-machineoverlaynobetterthan+0.3micrometer; h$       b.2.f.4.Alightsourcewavelengthshorterthan400nm;or ((!$      b.2.f.5.Capableofproducingapatternwithaminimumresolvablefeaturesizeof0.7micronsorless. -`'* Ї    b.2.g.Electronbeam,ionbeamorX-rayequipmentforprojectionimagetransfercapableofproducingpatternslessthan2.5micrometer;  Note: Forfocussed,deflected-beamsystems(directwritesystems),see3B991.b.1.jor   b.10.    b.2.h.Equipmentusing"lasers"fordirectwriteonwaferscapableofproducingpatternslessthan2.5micrometer.  b.3.Equipmentfortheassemblyofintegratedcircuits,asfollows:    b.3.a."Storedprogramcontrolled"diebondershavingallofthefollowingcharacteristics:     b.3.a.1.Speciallydesignedfor"hybridintegratedcircuits";     b.3.a.2.X-Ystagepositioningtravelexceeding37.5x37.5mm;and h$       b.3.a.3.PlacementaccuracyintheX-Yplaneoffinerthan+10 ((!$ micrometer;    b.3.b."Storedprogramcontrolled"equipmentforproducingmultiplebondsina -`'* singleoperation(e.g.,beamleadbonders,chipcarrierbonders,tapebonders);    b.3.c.Semi-automaticorautomatichotcapsealers,inwhichthecapisheatedlocallytoahighertemperaturethanthebodyofthepackage,speciallydesignedforceramicmicrocircuitpackagescontrolledby3A001andthathaveathroughputequaltoormorethanonepackageperminute.  Note: 3B991.b.3doesnotcontrolgeneralpurposeresistancetypespotwelders.     b.4.Filtersforcleanroomscapableofprovidinganairenvironmentof10orlessparticlesof0.3micrometerorsmallerper0.02832m3andfiltermaterialstherefor; (  3C002Resistmaterialand"substrates"coatedwithcontrolledresists.  ` @$***** ListofItemsControlled  H&"   Unit:$value *#&   RelatedControls:N/A +%( 0  RelatedDefinitions:Silylationtechniquesaredefinedasprocessesincorporating -`'* oxidationoftheresistsurfacetoenhanceperformanceforbothwetanddrydeveloping. (#(#   Items: H a.Positiveresistsdesignedforsemiconductorlithographyspeciallyadjusted(optimized)foruseatwavelengthsbelow350nm;b.Allresistsdesignedforusewithelectronbeamsorionbeams,withasensitivityof0.01coulomb/mm2orbetter;   c.AllresistsdesignedforusewithX-rays,withasensitivityof2.5mJ/mm2orbetter; H d.Allresistsoptimizedforsurfaceimagingtechnologies,includingsilylatedresists. 3C992Positiveresistsdesignedforsemiconductorlithographyspeciallyadjusted  @ (optimized)foruseatwavelengthsbetween370and350nm.  "   LicenseRequirements  H&"   ReasonforControl:AT *#&         h      p       Control(s)   h      p   CountryChart -`'*         ATappliestoentireentry     p   ATColumn1 H ̀ LicenseExceptions      LVS:N/A  GBS:N/A  CIV:N/A ListofItemsControlled  H   Unit:$value    RelatedControls:N/A    RelatedDefinitions:N/A `   Items:  @ ThelistofitemscontrollediscontainedintheECCNheading. 3E001"Technology"accordingtotheGeneralTechnologyNoteforthe"development"or ((!$ "production"ofequipmentormaterialscontrolledby3A(except3A292,3A980,3A981,3A991or3A992),3B(except3B991and3B992)or3C.  +%(  -`'* @$***** ListofItemsControlled  (    Unit:N/A   0  RelatedControls:1.)Seealso3E101and3E201.2.)3E001doesnotcontrol `  "technology"forthe"development"or"production"of:(a)Microwavetransistorsoperatingatfrequenciesbelow31GHz;(b)Integratedcircuitscontrolledby3A001.a.3toa.12,havingallofthefollowing:1.Using"technology"of0.7micrometerormore,AND2.Notincorporatingmultilayerstructures.3.Thetermmultilayerstructuresinthisentrydoesnotincludedevicesincorporatingamaximumoftwometallayersandtwopolysiliconlayers. (#(# 0  RelatedDefinition:N/A(#(#   Items: ` ThelistofitemscontrollediscontainedintheECCNheading. 3E002Other"technology"forthe"development"or"production"ofitemsdescribedin ((!$ theListofItemsControlled.  *#& @$***** -`'* Ї LicenseExceptions  h   CIV:N/A  TSR:Yes,except.eand.f  ListofItemsControlled  @    Unit:N/A h 0  RelatedControls:See3E001forsilicononinsulation(SOI)technologyforthe H  developmentor productionrelatedtoradiationhardeningofintegratedcircuits (#(#   RelatedDefinitions:N/A    Items:  a.Vacuummicroelectronicdevices;b.Hetero-structuresemiconductordevicessuchashighelectronmobilitytransistors(HEMT),hetero-bipolartransistors(HBT),quantumwellandsuperlatticedevices;c."Superconductive"electronicdevices;d.Substratesoffilmsofdiamondforelectroniccomponents; -`'* Їe.Substratesofsilicononinsulator(SOI)forintegratedcircuitsinwhichtheinsulatorissilicondioxide;f.Substratesofsiliconcarbideforelectroniccomponents.  10.InSupplementNo.1topart774(theCommerceControlList),Category4computersisamendedbyrevisingExportControlClassificationNumber(ECCN)4A003,toreadasfollows: 4A003"Digitalcomputers","electronicassemblies",andrelatedequipmenttherefor,and  speciallydesignedcomponentstherefor.    LicenseRequirements  "    ReasonforControl:NS,MT,CC,AT,NP,XP H&"         h      p       Control(s)   h      p   CountryChart *#&   0  0(#(#NSappliesto4A003.band.c     p   NSColumn1-`'*(#(# Ї0  0(#(#NSappliesto4A003.a,d,.e,     p   NSColumn2h(#(# 0    and.g (#(#     MTappliestodigital h      p   MTColumn1       computersusedasancillary    equipmentfortest    facilitiesandequipment    thatarecontrolledby9B005    or9B006.    CCappliestodigitalcomputers   p   CCColumn1 (     forcomputerizedfingerprint    equipment    ATappliestoentireentry     p   ATColumn1  @     (referto4A994forcontrols    ondigitalcomputerswithaCTP6 h$      butto2,000Mtops) H&"     0  0(#(#NPappliestodigitalcomputerswithaCTPgreaterthan2,000Mtops,unlessaLicenseExceptionisavailable.See742.3(b)oftheEARforinformationonapplicablelicensingreviewpolicies.-`'*(#(# Ї  0  XPappliestodigitalcomputerswithaCTPgreaterthan2,000Mtops,unlessaLicenseExceptionisavailable.XPcontrolsvaryaccordingtodestinationandenduserandenduse.See742.12oftheEARforadditionalinformation. (#(# 0  0(#(# Note: Foralldestinations,exceptCuba,Iran,Iraq,Libya,NorthKorea,Sudan,and   Syria,nolicenseisrequired(NLR)forcomputerswithaCTPof2,000Mtops,andforassembliesdescribedin4A003.cthatarenotcapableofexceedingaCTPof2,000Mtopsinaggregation.ComputerscontrolledinthisentryforMTreasonsarenoteligibleforNLR. (#(#   LicenseRequirementNotes:See743.1oftheEARforreportingrequirementsfor ( exportsunderLicenseExceptions. LicenseExceptions   @ 0  LVS:$5000;N/AforMTand"digital"computerscontrolledby4A003.bandhavingaCTPexceeding10,000MTOPS;or"electronicassemblies"controlledby4A003.candcapableofenhancingperformancebyaggregationof"computingelements"sothattheCTPoftheaggregationexceeds10,000MTOPS. p *#&(#(# 0  GBS:Yes,for4A003.d,.e,and.gandspeciallydesignedcomponentstherefor,exportedseparatelyoraspartofasystem.-`'*(#(# 0  CTP:Yes,forcomputerscontrolledby4A003.a,.band.c,totheexclusionofothertechnicalparameters,withtheexceptionofparametersspecifiedascontrolledforMissileTechnology(MT)concernsand4A003.e(equipmentperforminganalogtodigitalordigitaltoanalogconversionsexceedingthelimitsof3A001.a.5.a).See740.7oftheEAR. (#(# 0  CIV:Yes,for4A003.d(havinga3Dvectorratelessthat10Mvectors/sec),.e,and.g. (#(#  ListofItemsControlled      Unit:Equipmentinnumber;partsandaccessoriesin$value H   RelatedControls:Seealso4A994 (   RelatedDefinitions:N/A    Items:    Note1: 4A003includesthefollowing:  @     a.Vectorprocessors;    b.Arrayprocessors;    c.Digitalsignalprocessors; -`'*     d.Logicprocessors;    e.Equipmentdesignedfor"imageenhancement";    f.Equipmentdesignedfor"signalprocessing".  Note2: 󀀀Thecontrolstatusofthe"digitalcomputers"andrelatedequipmentdescribedin @  4A003isdeterminedbythecontrolstatusofotherequipmentorsystemsprovided:  a.The"digitalcomputers"orrelatedequipmentareessentialfortheoperationoftheotherequipmentorsystems;  b.The"digitalcomputers"orrelatedequipmentarenota"principalelement"oftheotherequipmentorsystems;and `     N.B.1: Thecontrolstatusof"signalprocessing"or"imageenhancement" "  equipmentspeciallydesignedforotherequipmentwithfunctionslimitedtothoserequiredfortheotherequipmentisdeterminedbythecontrolstatusoftheotherequipmentevenifitexceedsthe"principalelement"criterion.    N.B.2: Forthecontrolstatusof"digitalcomputers"orrelatedequipmentfor +%( telecommunicationsequipment,seeCategory5,Part1(Telecommunications). -`'* Ї  c.The"technology"forthe"digitalcomputers"andrelatedequipmentisdeterminedby4E.a.Designedormodifiedfor"faulttolerance";  Note: Forthepurposesof4A003.a.,"digitalcomputers"andrelatedequipmentarenot `  consideredtobedesignedormodifiedfor"faulttolerance"iftheyutilizeanyofthefollowing:  1.Errordetectionorcorrectionalgorithmsin"mainstorage";  2.Theinterconnectionoftwo"digitalcomputers"sothat,iftheactivecentralprocessingunitfails,anidlingbutmirroringcentralprocessingunitcancontinuethesystem'sfunctioning;  3.Theinterconnectionoftwocentralprocessingunitsbydatachannelsorbyuseofsharedstoragetopermitonecentralprocessingunittoperformotherworkuntilthesecondcentralprocessingunitfails,atwhichtimethefirstcentralprocessingunittakesoverinordertocontinuethesystem'sfunctioning;or  4.Thesynchronizationoftwocentralprocessingunitsby"software"sothatonecentralprocessingunitrecognizeswhentheothercentralprocessingunitfailsandrecoverstasksfromthefailingunit. -`'* b."Digitalcomputers"havinga"compositetheoreticalperformance"("CTP")exceeding2,000milliontheoreticaloperationspersecond(Mtops);c."Electronicassemblies"speciallydesignedormodifiedtobecapableofenhancingperformancebyaggregationof"computingelements"("CEs")sothatthe"CTP"oftheaggregationexceedsthelimitin4A003.b;  Note1: 4A003.cappliesonlyto"electronicassemblies"andprogrammable   interconnectionsnotexceedingthelimitin4A003.bwhenshippedasunintegrated"electronicassemblies".Itdoesnotapplyto"electronicassemblies"inherentlylimitedbynatureoftheirdesignforuseasrelatedequipmentcontrolledby4A003.d,or4A003.e.  Note2: 4A003.cdoesnotcontrol"electronicassemblies"speciallydesignedfora  productorfamilyofproductswhosemaximumconfigurationdoesnotexceedthelimitof4A003.b.d.Graphicsacceleratorsandgraphicscoprocessorsexceedinga"threedimensionalVectorRate"of3,000,000;e.Equipmentperforminganalog-to-digitalconversionsexceedingthelimitsin3A001.a.5;f.Reserved. -`'* Їg.Equipmentspeciallydesignedtoprovideexternalinterconnectionof"digitalcomputers"orassociatedequipmentthatallowscommunicationsatdataratesexceeding80Mbyte/s.  Note: 4A003.gdoesnotcontrolinternalinterconnectionequipment(e.g.,backplanes,   buses)passiveinterconnectionequipment,"networkaccesscontrollers"or"communicationchannelcontrollers".  11.InSupplementNo.1topart774,theCommerceControlList,Category4ComputersisamendedbyrevisingthetablefollowingtheEAR99entrytoreadasfollows:InformationonHowtoCalculate"CompositeTheoreticalPerformance("CTP") TechnicalNote: "COMPOSITETHEORETICALPERFORMANCE"("CTP")  @ AbbreviationsusedinthisTechnicalNote h$  "CE"    "computingelement"(typicallyanarithmeticlogicalunit) ((!$ FP    floatingpoint *#& XP    fixedpoint +%( t    executiontime -`'* XOR    exclusiveOR h CPU    centralprocessingunit H TP    theoreticalperformance(ofasingle"CE") (  "CTP"    "compositetheoreticalperformance"(multiple"CEs")   R    effectivecalculatingrate   WL    wordlength `  L    wordlengthadjustment @  *    multiply       Executiontimetisexpressedinmicroseconds,TPand"CTP"areexpressedinmillionsoftheoreticaloperationspersecond(Mtops)andWLisexpressedinbits.Outlineof"CTP"calculationmethod ` "CTP"isameasureofcomputationalperformancegiveninMtops.Incalculatingthe"CTP"ofanaggregationof"CEs"thefollowingthreestepsarerequired:  1.CalculatetheeffectivecalculatingrateRforeach"CE";  2.Applythewordlengthadjustment(L)totheeffectivecalculatingrate(R),resultinginaTheoreticalPerformance(TP)foreach"CE"; -`'* Ї  3.Ifthereismorethanone"CE",combinetheTPs,resultingina"CTP"fortheaggregation.Detailsforthesestepsaregiveninthefollowingsections.  Note1: Foraggregationsofmultiple"CEs"thathavebothsharedandunsharedmemory @  subsystems,thecalculationof"CTP"iscompletedhierarchically,intwosteps:first,aggregatethegroupsof"CEs"sharingmemory;second,calculatethe"CTP"ofthegroupsusingthecalculationmethodformultiple"CEs"notsharingmemory.  Note2: "CEs"thatarelimitedtoinput/outputandperipheralfunctions(e.g.,diskdrive,  communicationandvideodisplaycontrollers)arenotaggregatedintothe"CTP"calculation.π  ` ThefollowingtableshowsthemethodofcalculatingtheEffectiveCalculatingRateRforeach"CE":Step1:TheeffectivecalculatingrateR   *q ddd Xdd Xdd X(#(#q,<d ,<t +  1" @  1For"CEs"Implementing: Note: Every"CE"mustbeevaluated 0  independently. 4! 4EffectivecalculatingRate,R H9!P    @ HXPonly(Rxp) 4!p  4Ѐ1̄3*(txpadd)  H ifnoaddisimplementeduse:̀1̄(txpmult) 0  Ifneitheraddnormultiplyisimplementedusethefastestavailablearithmeticoperationasfollows:̀1̄ 3*txp p" SeeNotesX&Z H9!P$ @  HFPonly(Rfp) 4!"@' 4Ѐ11max,̀tfpadd󀀀tfpmult $ , SeeNotesX&Y H9!h& .   HBothFPandXP(R) 4!)X#1 4CalculatebothRxp,Rfp H9!)X#4   HForsimplelogicprocessorsnotimplementinganyofthespecifiedarithmetic operations. 4! H 4Ѐ1̄3*tlog  H  WheretlogistheexecutetimeoftheXOR,or  (  forlogichardwarenotimplementingtheXOR,thefastestsimplelogicoperation.SeeNotesX&Z F5!0    0FForspeciallogicprocessorsnotusinganyofthespecifiedarithmeticorlogicoperations. 4!  4R=R'*WL/64WhereR'isthenumberofresultspersecond,WListhenumberofbitsuponwhichthe h logicoperationoccurs,and64isafactortonormalizetoa64bitoperation.1'%( 0 0   1  H   NoteW: Forapipelined"CE"capableofexecutinguptoonearithmeticorlogic h operationeveryclockcycleafterthepipelineisfull,apipelinedratecanbeestablished.Theeffectivecalculatingrate(R)forsucha"CE"isthefasterofthepipelinedrateornon-pipelinedexecutionrate.  NoteX: Fora"CE"thatperformsmultipleoperationsofaspecifictypeinasinglecycle `  (e.g.,twoadditionspercycleortwoidenticallogicoperationspercycle),theexecutiontimetisgivenby:̀cycletimet=̀thenumberofidenticaloperationspermachinecycle"CEs"thatperformdifferenttypesofarithmeticorlogicoperationsinasinglemachinecyclearetobetreatedasmultipleseparate"CEs"performingsimultaneously(e.g.,a"CE"performinganadditionandamultiplicationinonecycleistobetreatedastwo"CEs",thefirstperforminganadditioninonecycleandthesecondperformingamultiplicationinonecycle).Ifasingle"CE"hasbothscalarfunctionandvectorfunction,usetheshorterexecutiontimevalue.  NoteY: Forthe"CE"thatdoesnotimplementFPaddorFPmultiply,butthatperforms *#& FPdivide: -`'* Ѐ1Rfp= H Ѐtfpdivide (  Ifthe"CE"implementsFPreciprocalbutnotFPadd,FPmultiplyorFPdivide,theǹ1Rfp= h Ѐtfpreciprocal H Ifnoneofthespecifiedinstructionsisimplemented,theeffectiveFPrateis0.  NoteZ: Insimplelogicoperations,asingleinstructionperformsasinglelogic ` manipulationofnomorethantwooperandsofgivenlengths.Incomplexlogicoperations,asingleinstructionperformsmultiplelogicmanipulationstoproduceoneormoreresultsfromtwoormoreoperands.  ((!$   Ratesshouldbecalculatedforallsupportedoperandlengthsconsideringbothpipelinedoperations(ifsupported),andnon-pipelinedoperationsusingthefastestexecutinginstructionforeachoperandlengthbasedon:  1.Pipelinedorregister-to-registeroperations.Excludeextraordinarilyshortexecutiontimesgeneratedforoperationsonapredeterminedoperandoroperands(forexample,multiplicationby0or1).Ifnoregister-to-registeroperationsareimplemented,continuewith(2).  2.Thefasterofregister-to-memoryormemory-to-registeroperations;ifthesealsodonotexist,thencontinuewith(3).  3.Memory-to-memory.Ineachcaseabove,usetheshortestexecutiontimecertifiedbythemanufacturer.Step2:TPforeachsupportedoperandlengthWL "  AdjusttheeffectiverateR(orR')bythewordlengthadjustmentLasfollows:TP=R*L,whereL=(1/3+WL/96)  Note: ThewordlengthWLusedinthesecalculationsistheoperandlengthinbits.(Ifan -`'* operationusesoperandsofdifferentlengths,selectthelargestwordlength.)ThecombinationofamantissaALUandanexponentALUofafloatingpointprocessororunitisconsideredtobeone"CE"withaWordLength(WL)equaltothenumberofbitsinthedatarepresentation(typically32or64)forpurposesofthe"CTP"calculation.ThisadjustmentisnotappliedtospecializedlogicprocessorsthatdonotuseXORinstructions.InthiscaseTP=R.SelectthemaximumresultingvalueofTPfor:  EachXP-only"CE"(Rxp); (   EachFP-only"CE"(Rfp);    EachcombinedFPandXP"CE"(R);  Eachsimplelogicprocessornotimplementinganyofthespecifiedarithmeticoperations;and H&"   Eachspeciallogicprocessornotusinganyofthespecifiedarithmeticorlogicoperations.  *#& Step3:"CTP"foraggregationsof"CEs",includingCPUs. h ForaCPUwithasingle"CE","CTP"=TP(for"CEs"performingbothfixedandfloatingpointoperationsTP=max(TPfp,TPxp))   "CTP"foraggregationsofmultiple"CEs"operatingsimultaneouslyiscalculatedasfollows:  Note1: Foraggregationsthatdonotallowallofthe"CEs"torunsimultaneously,the h possiblecombinationof"CEs"thatprovidesthelargest"CTP"shouldbeused.TheTPofeachcontributing"CE"istobecalculatedatitsmaximumvaluetheoreticallypossiblebeforethe"CTP"ofthecombinationisderived.    N.B.: Todeterminethepossiblecombinationsofsimultaneouslyoperating"CEs", ` generateaninstructionsequencethatinitiatesoperationsinmultiple"CEs",beginningwiththeslowest"CE"(theoneneedingthelargestnumberofcyclestocompleteitsoperation)andendingwiththefastest"CE".Ateachcycleofthesequence,thecombinationof"CEs"thatareinoperationduringthatcycleisapossiblecombination.Theinstructionsequencemusttakeintoaccountallhardwareand/orarchitecturalconstraintsonoverlappingoperations.  Note2: 󀀀Asingleintegratedcircuitchiporboardassemblymaycontainmultiple"CEs". +%(  -`'*   Note3: Simultaneousoperationsareassumedtoexistwhenthecomputermanufacturer h claimsconcurrent,parallelorsimultaneousoperationorexecutioninamanualorbrochureforthecomputer.  Note4: "CTP"valuesarenottobeaggregatedfor"CE"combinations(inter)connected   by"LocalAreaNetworks",WideAreaNetworks,I/Osharedconnections/devices,I/Ocontrollersandanycommunicationinterconnectionimplementedby"software".  h   Note5: "CTP"valuesmustbeaggregatedformultiple"CEs"speciallydesignedto h enhanceperformancebyaggregation,operatingsimultaneouslyandsharingmemory,-ormultiplememory/"CE"-combinationsoperatingsimultaneouslyutilizingspeciallydesignedhardware.Thisaggregationdoesnotapplyto"electronicassemblies"describedby4A003.c."CTP"=TP1+C2*TP2+...+Cn*TPn,   wheretheTPsareorderedbyvalue,withTP1beingthehighest,TP2beingthesecondhighest,..., H andTPnbeingthelowest.Ciisacoefficientdeterminedbythestrengthoftheinterconnection ( between"CEs",asfollows:Formultiple"CEs"operatingsimultaneouslyandsharingmemory:C2=C3=C4=...=Cn=0.75 "    Note1: Whenthe"CTP"calculatedbytheabovemethoddoesnotexceed194Mtops, H&" thefollowingformulamaybeusedtocalculateCi: ((!$ ̀0.75Ci=     (i=2,...,n) -`'* Ѐm h wherem=thenumberof"CEs"orgroupsof"CEs"sharingaccess.provided:1.TheTP1ofeach"CE"orgroupof"CEs"doesnotexceed30Mtops; @  2.The"CEs"orgroupsof"CEs"shareaccesstomainmemory(excludingcachememory)overasinglechannel;and H 3.Onlyone"CE"orgroupof"CEs"canhaveuseofthechannelatanygiventime.  N.B.: ThisdoesnotapplytoitemscontrolledunderCategory3. `   Note2: "CEs"sharememoryiftheyaccessacommonsegmentofsolidstatememory. h$  Thismemorymayincludecachememory,mainmemoryorotherinternalmemory.Peripheralmemorydevicessuchasdiskdrives,tapedrivesorRAMdisksarenotincluded.  *#& ForMultiple"CEs"orgroupsof"CEs"notsharingmemory,interconnectedbyoneormoredatachannels:Ci󀀀=0.75*ki󀀀(i=2,...,32)(seeNotebelow)   Ѐ=0.60*ki󀀀(i=33,...,64)   Ѐ=0.45*ki󀀀(i=65,...,256) `  Ѐ=0.30*ki󀀀(i>256) @  ThevalueofCiisbasedonthenumberof"CE"s,notthenumberofnodes. h where  ki=min(Si/Kr,1),and (   Kr=normalizingfactorof20MByte/s.    Si=sumofthemaximumdatarates(inunitsofMByte/s)foralldatachannels  connectedtotheith"CE"orgroupof"CEs"sharingmemory. ` WhencalculatingaCiforagroupof"CEs",thenumberofthefirst"CE"inagroupdetermines "  theproperlimitforCi.Forexample,inanaggregationofgroupsconsistingof3"CEs"each,the h$  22ndgroupwillcontain"CE"64,"CE"65and"CE"66.TheproperlimitforCiforthisgroupis H&" 0.60.Aggregation(of"CEs"orgroupsof"CEs")shouldbefromthefastest-to-slowest;i.e.:  TP1TP2....>TPn,and -`'* inthecaseofTPi=TPi+1,fromthelargesttosmallest;i.e.: h   CiCi+1 H   Note: Thekifactorisnottobeappliedto"CEs"2to12iftheTPiofthe"CE"orgroup   of"CEs"ismorethan50Mtops;i.e.,Cifor"CEs"2to12is0.75.     12.InSupplementNo.1topart774(theCommerceControlList),Category5Telecommunicationsand"InformationSecurity",Part1TelecommunicationsisamendedbyrevisingthetelecommunicationsnotesthatimmediatelyfollowtheCategory5I"telecommunications"heading,toreadasfollows: Category5-Telecommunicationsand"InformationSecurity"   @ PartI.Telecommunications H&" Ѐ̀   *#&   Notes: 1.Thecontrolstatusofcomponents,"lasers",testand"production" +%( equipmentand"software"thereforwhicharespeciallydesignedfortelecommunications -`'* equipmentorsystemsisdeterminedinCategory5,PartI.̀  2."Digitalcomputers",relatedequipmentor"software",whenessentialfortheoperationandsupportoftelecommunicationsequipmentdescribedinthisCategory,areregardedasspeciallydesignedcomponents,providedtheyarethestandardmodelscustomarilysuppliedbythemanufacturer.Thisincludesoperation,administration,maintenance,engineeringorbillingcomputersystems.  13.InSupplementNo.1topart774(theCommerceControlList),Category5Telecommunicationsand"InformationSecurity",PartITelecommunicationsisamendedtoreadasfollows:̀    a.ByrevisingECCN5A001;      b.ByrevisingECCN5A991;    c.Byrevising5B001;    d.ByremovingECCN5C001;    e.ByaddinganewECCN5C991;and    f.ByrevisingtheLicenseExceptionssectionandtheListofItemsControlledforECCNs5D001and5E001,toreadasfollows:̀ 5A001Telecommunicationssystems,equipment,andcomponents.  -`'* Ї LicenseRequirements  h   ReasonforControl:NS,AT (          h      p       Control(s)   h      p   CountryChart         NSappliesto5A001.a h      p   NSColumn1 @      NSappliesto5A001.b,.c,     p   NSColumn2 h     or.d    ATappliestoentireentry     p   ATColumn1    LicenseRequirementNotes:See743.1oftheEARforreportingrequirementsfor ` exportsunderLicenseExceptions. LicenseExceptions  h$    LVS:N/Afor5A001.aandb.4    $5000for5A001b.2,b.3,b.5,and.d    $3000for5A001.c  GBS:Yes,except5A001.aandb.4 -`'*   CIV:Yes,except5A001.a,b.3andb.4   h  ListofItemsControlled  (  0  Unit:Equipmentinnumber;partsandaccessoriesin$value (#(#   RelatedControls:Seealso5A101and5A991 `    RelatedDefinitions:N/A @    Items:   a.Anytypeoftelecommunicationsequipmenthavinganyofthefollowingcharacteristics,functionsorfeatures:  a.1.Speciallydesignedtowithstandtransitoryelectroniceffectsorelectromagneticpulseeffects,botharisingfromanuclearexplosion;  a.2.Speciallyhardenedtowithstandgamma,neutronorionradiation;or h$    a.3.Speciallydesignedtooperateoutsidethetemperaturerangefrom218K(-55oC)to397K(124oC). *#& Ѐ  Note: 5A001.a.3appliesonlytoelectronicequipment. -`'* Ї  Note: 5A001.a.2and5A001.a.3donotapplytoequipmentonboardsatellites. h b.Telecommunicationtransmissionequipmentandsystems,andspeciallydesignedcomponentsandaccessoriestherefor,havinganyofthefollowingcharacteristics,functionsorfeatures:  b.1Beingunderwatercommunicationssystemshavinganyofthefollowingcharacteristics:    b.1.a.Anacousticcarrierfrequencyoutsidetherangefrom20kHzto60kHz;    b.1.b.Usinganelectromagneticcarrierfrequencybelow30kHz;or      b.1.c.Usingelectronicbeamsteeringtechniques;    b.2.Beingradioequipmentoperatinginthe1.5MHzto87.5MHzbandandhavinganyofthefollowingcharacteristics:    b.2.a.Incorporatingadaptivetechniquesprovidingmorethan15dBsuppressionofaninterferingsignal;or ((!$     b.2.b.Havingallofthefollowing: -`'*      b.2.b.1.Automaticallypredictingandselectingfrequenciesand"totaldigitaltransferrates"perchanneltooptimizethetransmission;and H      b.2.b.2.Incorporatingalinearpoweramplifierconfigurationhavingacapabilitytosupportmultiplesignalssimultaneouslyatanoutputpowerof1kWormoreinthe1.5MHzto30MHzfrequencyrangeor250Wormoreinthe30MHzto87.5MHzfrequencyrange,overan"instantaneousbandwidth"ofoneoctaveormoreandwithanoutputharmonicanddistortioncontentofbetterthan-80dB;  b.3.Beingradioequipmentemploying"spreadspectrum"or"frequencyagility"(frequencyhopping)techniqueshavinganyofthefollowingcharacteristics:    b.3.a.Userprogrammablespreadingcodes;or      b.3.b.Atotaltransmittedbandwidthwhichis100ormoretimesthebandwidthofanyoneinformationchannelandinexcessof50kHz;  Note: 5A001.b.3.bdoesnotcontrolcellularradioequipmentoperatingincivilbands. H&"   Note: 5A001.b.3doesnotcontrolequipmentoperatingatanoutputpowerof1.0Wattor *#& less. -`'*   b.4.Beingdigitallycontrolledradioreceivershavingallofthefollowing:    b.4.a.Morethan1,000channels;    b.4.b.A"frequencyswitchingtime"oflessthan1ms;    b.4.c.Automaticsearchingorscanningofapartoftheelectromagneticspectrum;and       b.4.d.Identificationofthereceivedsignalsorthetypeoftransmitter;or H   Note: 5A001.b.4doesnotcontrolcellularradioequipmentoperatingincivilbands.    b.5.Employingfunctionsofdigital"signalprocessing"toprovidevoicecodingatratesoflessthan2,400bit/s.c.Opticalfibercommunicationcables,opticalfibersandaccessories,asfollows:  c.1.Opticalfibersofmorethan500minlengthspecifiedbythemanufacturerasbeingcapableofwithstandingaprooftesttensilestressof2x109N/m2ormore; +%(  -`'*    TechnicalNote: ProofTest:on-lineoroff-lineproductionscreentestingthat h dynamicallyappliesaprescribedtensilestressovera0.5to3mlengthoffiberatarunningrateof2to5m/swhilepassingbetweencapstansapproximately150mmindiameter.Theambienttemperatureisanominal293K(20$C)andrelativehumidity40%.     N.B.: Equivalentnationalstandardsmaybeusedforexecutingtheprooftest. `    c.2.Opticalfibercablesandaccessoriesdesignedforunderwateruse.  Note: 5A001.c.2doesnotcontrolstandardciviltelecommunicationcablesand H accessories.  N.B.1: Forunderwaterumbilicalcables,andconnectorsthereof,see8A002.a.3.    N.B.2 :Forfiber-optichullpenetratorsorconnectors,see8A002.c.  @ d."Electronicallysteerablephasedarrayantennae"operatingabove31GHz.  Note: 5A001.ddoesnotcontrol"electronicallysteerablephasedarrayantennae"for ((!$ landingsystemswithinstrumentsmeetingICAOstandardscoveringmicrowavelandingsystems(MLS). -`'* Ї 5A991Telecommunicationequipment,notcontrolledby5A001.  h     LicenseRequirements  (    ReasonforControl:AT           h      p       Control(s)   h      p   CountryChart @      ATappliestoentireentry     p   ATColumn1 h  LicenseExceptions  (   LVS:N/A  GBS:N/A  `   CIV:N/A   @  ListofItemsControlled  h$    Unit:$value ((!$   RelatedControls:N/A *#&   RelatedDefinitions:N/A +%(   Items: -`'* Їa.Anytypeoftelecommunicationsequipment,notcontrolledby5A001.a,speciallydesignedtooperateoutsidethetemperaturerangefrom219K(54$C)to397K(124$C). H b.Telecommunicationtransmissionequipmentandsystems,andspeciallydesignedcomponentsandaccessoriestherefor,havinganyofthefollowingcharacteristics,functionsorfeatures:  Note: Telecommunicationtransmissionequipment: @    a.Categorizedasfollows,orcombinationsthereof:    1.Radioequipment(e.g.,transmitters,receiversandtransceivers);    2.Lineterminatingequipment;    3.Intermediateamplifierequipment;    4.Repeaterequipment;    5.Regeneratorequipment;    6.Translationencoders(transcoders); -`'* Ї    7.Multiplexequipment(statisticalmutiplexincluded);    8.Modulators/demodulators(modems);    9.Transmultiplexequipment(seeCCITTRec.G701);    10."Storedprogramcontrolled"digitalcrossconnectionequipment;    11."Gateways"andbridges;    12."Mediaaccessunits";and (   b.Designedforuseinsingleormulti-channelcommunicationviaanyofthefollowing:    1.Wire(line);    2.Coaxialcable;    3.Opticalfibercable;    4.Electromagneticradiation;or +%(    -`'*     5.Underwateracousticwavepropagation.  b.1.Employingdigitaltechniques,includingdigitalprocessingofanalogsignals,anddesignedtooperateata"digitaltransferrate"atthehighestmultiplexlevelexceeding45Mbit/sora"totaldigitaltransferrateexceeding90Mbit/s;  Note: 5A991.b.1doesnotcontrolequipmentspeciallydesignedtobeintegratedand @  operatedinanysatellitesystemforciviluse.  b.2.Modemsusingthe"bandwidthofonevoicechannel"witha"datasignallingrate"exceeding9,600bitspersecond;  b.3.Being"storedprogramcontrolled"digitalcrossconnectequipmentwith"digitaltransferrate"exceeding8.5Mbit/sperport.    b.4.Beingequipmentcontaininganyofthefollowing:    b.4.a."Networkaccesscontrollers"andtheirrelatedcommonmediumhavinga"digitaltransferrate"exceeding33Mbit/s;or ((!$     b.4.b."Communicationchannelcontrollers"withadigitaloutputhavinga"datasignallingrate"exceeding64,000bit/sperchannel; -`'* Ї  Note: Ifanyuncontrolledequipmentcontainsa"networkaccesscontroller",itcannot h haveanytypeoftelecommunicationsinterface,exceptthosedescribedin,butnotcontrolledby H 5A991.b.4.  b.5.Employinga"laser"andhavinganyofthefollowingcharacteristics:    b.5.a.Atransmissionwavelengthexceeding1,000nm;or @      b.5.b.Employinganalogtechniquesandhavingabandwidthexceeding45MHz;  Note: 5A991.b.5.bdoesnotcontrolcommercialTVsystems. (     b.5.c.Employingcoherentopticaltransmissionorcoherentopticaldetectiontechniques(alsocalledopticalheterodyneorhomodynetechniques);    b.5.d.Employingwavelengthdivisionmultiplexingtechniques;or "      b.5.e.Performing"opticalamplification";  b.6.Radioequipmentoperatingatinputoroutputfrequenciesexceeding:    b.6.1.31GHzforsatelliteearthstationapplications;or -`'* Ї    b.6.2.26.5GHzforotherapplications;  Note: 5A991.b.6doesnotcontrolequipmentforcivilusewhenconformingwithan (  InternationalTelecommunicationsUnion(ITU)allocatedbandbetween26.5GHzand31GHz.  b.7.Beingradioequipmentemployinganyofthefollowing:̀    b.7.a.Quadrature-amplitude-modulation(QAM)techniquesabovelevel4ifthe"totaldigitaltransferrate"exceeds8.5Mbit/s;    b.7.b.QAMtechniquesabovelevel16ifthe"totaldigitaltransferrate"isequaltoorlessthan8.5Mbit/s;or      b.7.c.Otherdigitalmodulationtechniquesandhavinga"spectralefficiency"exceeding3bit/sec/Hz;  Notes: 1.5A001.b.7doesnotcontrolequipmentspeciallydesignedtobeintegratedand h$  operatedinanysatellitesystemforciviluse.    2.5A001.b.7doesnotcontrolradiorelayequipmentforoperationinanITUallocatedband: -`'*      a.Havinganyofthefollowing:       a.1.Notexceeding960MHz;or (         a.2.Witha"totaldigitaltransferrate"notexceeding8.5Mbit/s;and `       b.Havinga"spectralefficiency"notexceeding4bit/sec/Hz.  b.8.Providingfunctionsofdigital signalprocessingasfollows:    b.8.a.Voicecodingatrateslessthan2,400bit/s;    b.8.b.Employingcircuitrythatincorporates"useraccessibleprogrammability"ofdigital"signalprocessing"circuitsexceedingthelimitsof4A003.b.c."Storedprogramcontrolled"switchingequipmentandrelatedsignallingsystems,havinganyofthefollowingcharacteristics,functionsorfeatures,andspeciallydesignedcomponentsandaccessoriestherefor:  Note:Statisticalmultiplexerswithdigitalinputanddigitaloutputwhichprovide +%( switchingaretreatedas"storedprogramcontrolled"switches. -`'* Ї  c.1."Data(message)switching"equipmentorsystemsdesignedfor"packetmodeoperation"andassembliesandcomponentstherefor,n.e.s.̀c.2.Containing"IntegratedServicesDigitalNetwork"(ISDN)functionsandhavinganyofthefollowing:    c.2.a.Switchterminal(e.g.,subscriberline)interfaceswitha"digitaltransferrate"atthehighestmultiplexlevelexceeding192,000bit/s,includingtheassociatedsignallingchannel(e.g.,2B+D);or h     c.2.b.Thecapabilitythatasignallingmessagereceivedbyaswitchonagivenchannelthatisrelatedtoacommunicationonanotherchannelmaybepassedthroughtoanotherswitch.  Note: 5A991.cdoesnotprecludetheevaluationandappropriateactionstakenbythe  @ receivingswitchorunrelatedusermessagetrafficonaDchannelofISDN.̀̀c.3.Routingorswitchingof"datagram"packets;  c.4.Routingorswitchingof"fastselect"packets;  Note: Therestrictionsin5A991.c.3andc.4donotapplytonetworksrestrictedtousing -`'* only"networkaccesscontrollers"orto"networkaccesscontrollers"themselves.  c.5.Multilevelpriorityandpreemptionforcircuitswitching;  Note: 5A991.c.5doesnotcontrolsinglelevelcallpreemption.     c.6.Designedforautomatichandoffofcellularradiocallstoothercellularswitchesorautomaticconnectiontoacentralizedsubscriberdatabasecommontomorethanoneswitch;  c.7.Containing"storedprogramcontrolled"digitalcrossconnectequipmentwith"digitaltransferrate"exceeding8.5Mbit/sperport.  c.8."Commonchannelsignalling"operatingineithernon-associatedorquasi-associatedmodeofoperation;  c.9."Dynamicadaptiverouting";  Note: 5A991.c.10doesnotcontrolpacketswitchesorrouterswithportsorlinesnot H&" exceedingthelimitsin5A001.c.10.  c.10.Beingpacketswitches,circuitswitchesandrouterswithportsorlinesexceedinganyofthefollowing: -`'* Ї    c.10.a.A"datasignallingrate"of64,000bit/sperchannelfora"communicationschannelcontroller";or H     Note: 5A991.c.10.adoesnotcontrolmultiplexcompositelinkscomposedonlyof   communicationchannelsnotindividuallycontrolledby5A991.b.1.    c.10.b.A"digitaltransferrate"of33Mbit/sfora"networkaccesscontroller"andrelatedcommonmedia;    c.10.c."Opticalswitching";    c.10.d.Employing"AsynchronousTransferMode("ATM")techniques.d.Opticalfibersandopticalfibercablesofmorethan50minlengthdesignedforsinglemodeoperation;e.Centralizednetworkcontrolhavingallofthefollowingcharacteristics:  e.1.Receivesdatafromthenodes;and *#&   e.2.Processthesedatainordertoprovidecontroloftrafficnotrequiringoperator -`'* decisions,andtherebyperforming"dynamicadaptiverouting";  Note: 5A991.edoesnotprecludecontroloftrafficasafunctionofpredictablestatistical (  trafficconditions.f.Phasedarrayantennae,operatingabove10.5GHz,containingactiveelementsanddistributedcomponents,anddesignedtopermitelectroniccontrolofbeamshapingandpointing,exceptforlandingsystemswithinstrumentsmeetingInternationalCivilAviationOrganization(ICAO)standards(microwavelandingsystems(MLS)).g.Mobilecommunicationsequipment,n.e.s.,andassembliesandcomponentstherefor;or ( h.Radiorelaycommunicationsequipmentdesignedforuseatfrequenciesequaltoorexceeding19.7GHzandassembliesandcomponentstherefor,n.e.s.B.Test,InspectionandProductionEquipment 5B001Telecommunicationtest,inspectionandproductionequipment,asfollows(SeeList *#& ofItemsControlled).  +%(  -`'* Ї LicenseRequirements  H   ReasonforControl:NS,AT           h      p       Control(s)   h      p   CountryChart `        NSappliestoentireentry     p   NSColumn2       ATappliestoentireentry     p   ATColumn1 H   LicenseRequirementNotes:See743.1oftheEARforreportingrequirementsfor  exportsunderLicenseExceptions. LicenseExceptions   @   LVS:$5000  h$    GBS:Yes  H&"   CIV:Yes ListofItemsControlled  +%(  -`'*   Unit:Equipmentinnumber;partsandaccessoriesin$value h 0  RelatedControls:Seealso5B991.H(#(# 0  RelatedDefinition:N/A( (#(#   Items:   a.Equipmentandspeciallydesignedcomponentsoraccessoriestherefor,speciallydesignedforthe"development","production"or"use"ofequipment,functionsorfeaturescontrolledby5A001,5D001or5E001.  Note: 5B001.adoesnotcontrolopticalfibercharacterizationequipmentnotusing H semiconductor"lasers".b.Equipmentandspeciallydesignedcomponentsoraccessoriestherefor,speciallydesignedforthe"development"ofanyofthefollowingtelecommunicationtransmissionor"storedprogramcontrolled"switchingequipment:  b.1.Equipmentemployingdigitaltechniques,including"AsynchronousTransferMode"("ATM"),designedtooperateata"totaldigitaltransferrate"exceeding1.5Gbit/s;  b.2.Equipmentemployinga"laser"andhavinganyofthefollowing:    b.2.a.Atransmissionwavelengthexceeding1750nm; -`'* Ї    b.2.b.Performing"opticalamplification";    b.2.c.Employingcoherenttransmissionorcoherentopticaldetectiontechniques(alsocalledopticalheterodyneorhomodynetechniques);or       b.2.d.Employinganaloguetechniquesandhavingabandwidthexceeding2.5GHz;  Note: 5B001.b.2.ddoesnotincludeequipmentspeciallydesignedforthe"development"   ofcommercialTVsystems.  b.3.Equipmentemploying"opticalswitching";  b.4.Radioequipmenthavinganyofthefollowing:     b.4.a.Quadratureamplitudemodulation(QAM)techniquesabovelevel128;or "       b.4.b.Operatingatinputoroutputfrequenciesexceeding31GHz;or H&"   Note: 5B001.b.4.bdoesnotincludeequipmentspeciallydesignedforthe"development" *#& ofequipmentdesignedormodifiedforoperationinanyITUallocatedband. -`'*   b.5.Equipmentemploying"commonchannelsignalling"operatingineitherthenonassociatedmodeofoperation. 5C991Preformsofglassorofanyothermaterialoptimizedforthemanufactureofoptical @  fiberscontrolledby5A991.     LicenseRequirements  H   ReasonforControl:AT          h      p       Control(s)   h      p   CountryChart `       ATappliestoentireentry     p   ATColumn1 "   LicenseExceptions  H&"   LVS:N/A  *#&   GBS:N/A  +%(   CIV:N/A -`'* Ї ListofItemsControlled  h   Unit:$value (    RelatedControls:N/A     RelatedDefinitions:N/A     Items: `  ThelistofitemscontrollediscontainedintheECCNheading.D.Software 5D001"Software",asdescribedintheListofItemsControlled.   @  @$***** H&"  LicenseExceptions  *#& 0  CIV:Yes,exceptfor"software"controlledby5D001.aandspeciallydesignedforthe -`'* "development"or"production"ofitemscontrolledby5A001.b.4 (#(# 0  TSR:Yes,exceptforexportsandreexportstodestinationsoutsideofAustria,Belgium,Canada,Denmark,Finland,France,Germany,Greece,Ireland,Italy,Japan,Luxembourg,theNetherlands,Portugal,Spain,Sweden,ortheUnitedKingdomof"software"controlledby5D001.aandspeciallydesignedforitemscontrolledby5A001.b.4. (#(#  ListofItemsControlled  @    Unit:$value h   RelatedControls:Seealso5D991 H   RelatedDefinitions:N/A (   Items:  a."Software"speciallydesignedormodifiedforthe"development","production"or"use"ofequipment,functionsorfeaturescontrolledby5A001or5B001.b."Software"speciallydesignedormodifiedtosupport"technology"controlledby5E001.c.Specific"software"asfollows:  c.1."Software"speciallydesignedormodifiedtoprovidecharacteristics,functionsorfeaturesofequipmentcontrolledby5A001or5B001; -`'* Ї  c.2."Software"whichprovidesthecapabilityofrecovering"sourcecode"oftelecommunications"software"controlledby5D001;  c.3."Software",otherthaninmachine-executableform,speciallydesignedfor"dynamicadaptiverouting".d."Software"speciallydesignedormodifiedforthe"development"ofanyofthefollowingtelecommunicationtransmissionor"storedprogramcontrolled"switchingequipment:  d.1.Equipmentemployingdigitaltechniques,including"AsynchronousTransferMode"("ATM"),designedtooperateata"totaldigitaltransferrate"exceeding1.5Gbit/s;  d.2.Equipmentemployinga"laser"andhavinganyofthefollowing:    d.2.a.Atransmissionwavelengthexceeding1750nm;    d.2.b.Employinganaloguetechniquesandhavingabandwidthexceeding2.5GHz;  Note: 5D001.d.2.bdoesnotinclude"software"speciallydesignedormodifiedforthe ((!$ "development"ofcommercialTVsystems.  d.3.Equipmentemploying"opticalswitching";or -`'* Ї  d.4.Radioequipmenthavinganyofthefollowing:    d.4.a.Quadratureamplitudemodulation(QAM)techniquesabovelevel128;or (      d.4.b.Operatingatinputoroutputfrequenciesexceeding31GHz;or     Note: 5D001.d.4.bdoesnotinclude"software"speciallydesignedormodifiedforthe @  "development"ofequipmentdesignedormodifiedforoperationinanyITUallocatedband. 5E001"Technology",(seeListofItemsControlled).  (  @$***** LicenseExceptions  h$    CIV:N/A  ((!$ 0  TSR:Yes,exceptforexportsorreexportstodestinationsoutsideofAustria,Belgium,Canada,Denmark,Finland,France,Germany,Greece,Ireland,Italy,Japan,Luxembourg,theNetherlands,Portugal,Spain,Sweden,ortheUnitedKingdomof"technology" -`'* controlledby5E001.aforthe"development"or"production"ofthefollowing: (#(#   1)Itemscontrolledby5A001.b.4;or0  2)"Software"controlledby5D001.athatisspeciallydesignedforthe"development"or"production"ofitemscontrolledby5A001.b.4. (#(#  ListofItemsControlled  `    Unit:$value     RelatedControls:Seealso5E101and5E991 h   RelatedDefinitions:N/A H   Items: ( a."Technology"accordingtotheGeneralTechnologyNoteforthe"development","production"or"use"(excludingoperation)ofequipment,functionsorfeaturesor"software"controlledby5A001,5B001or5D001.b.Specific"technologies",asfollows:  b.1."Required""technology"forthe"development"or"production"oftelecommunicationsequipmentspeciallydesignedtobeusedonboardsatellites;  b.2."Technology"forthe"development"or"use"of"laser"communicationtechniques -`'* withthecapabilityofautomaticallyacquiringandtrackingsignalsandmaintainingcommunicationsthroughexoatmosphereorsub-surface(water)media;  b.3."Technology"forthe"development"ofdigitalcellularradiosystems;  b.4."Technology"forthe"development"of"spreadspectrum"or"frequencyagility"(frequencyhopping)techniques.c."Technology"accordingtheGeneralTechnologyNoteforthe"development"ofanyofthefollowingtelecommunicationtransmissionor"storedprogramcontrolled"switchingequipment,functionsorfeatures:  c.1.Equipmentemployingdigitaltechniques,including"AsynchronousTransferMode"("ATM"),designedtooperateata"totaldigitaltransferrate"exceeding1.5Gbit/s;  c.2.Equipmentemployinga"laser"andhavinganyofthefollowing:    c.2.a.Atransmissionwavelengthexceeding1750nm;    c.2.b.Performing"opticalamplification"usingpraseodymiumdopedfluoridefiberamplifiers(PDFFA); -`'*     c.2.c.Employingcoherentopticaltransmissionorcoherentopticaldetectiontechniques(alsocalledopticalheterodyneorhomodynetechniques);    c.2.d.Employingwavelengthdivisionmultiplexingtechniquesexceeding8opticalcarriersinasingleopticalwindow;or       c.2.e.Employinganaloguetechniquesandhavingabandwidthexceeding2.5GHz;  Note: 5E001.c.2.edoesnotinclude"technology"forthe"development"or"production" h ofcommercialTVsystems.  c.3.Equipmentemploying"opticalswitching";or    c.4.Radioequipmenthavinganyofthefollowing:    c.4.a.Quadratureamplitudemodulation(QAM)techniquesabovelevel128;or "      c.4.b.Operatingatinputoroutputfrequenciesexceeding31GHz;or H&"   Note: 5E001.c.4.bdoesnotinclude"technology"forthe"development"or"production" *#& ofequipmentdesignedormodifiedforoperationinanyITUallocatedband. -`'*   c.5.Equipmentemploying"commonchannelsignalling"operatingineithernonassociatedorquasiassociatedmodeofoperation.  14.InSupplementNo.1topart774(theCommerceControlList),Category6SensorsandLasers,thefollowingExportControlClassificationNumbers(ECCNs)areamended:  @      a.ByrevisingtheListofItemsControlledsectionforECCNs6A003,6A005and6C002;and    b.ByrevisingtheentryheadingforECCN6C992,toreadasfollows: 6A003Cameras.   @$***** ListofItemsControlled  h$    Unit:Number ((!$ 0  RelatedControls:Seealso6A203.See8A002.dand.eforcamerasspeciallydesignedor *#& modifiedforunderwateruse. (#(#   RelatedDefinitions:N/A -`'*   Items: h a.Instrumentationcameras,asfollows:  a.1.High-speedcinemarecordingcamerasusinganyfilmformatfrom8mmto16mminclusive,inwhichthefilmiscontinuouslyadvancedthroughouttherecordingperiod,andthatarecapableofrecordingatframingratesexceeding13,150frames/s;  Note :6A003.a.1doesnotcontrolcinemarecordingcamerasdesignedforcivilpurposes. h   a.2.Mechanicalhighspeedcameras,inwhichthefilmdoesnotmove,capableofrecordingatratesexceeding1,000,000frames/sforthefullframingheightof35mmfilm,oratproportionatelyhigherratesforlesserframeheights,oratproportionatelylowerratesforgreaterframeheights;  a.3.Mechanicalorelectronicstreakcamerashavingwritingspeedsexceeding10mm/s;  a.4.Electronicframingcamerashavingaspeedexceeding1,000,000frames/s;  a.5.Electroniccameras,havingallofthefollowing:    a.5.a.Anelectronicshutterspeed(gatingcapability)oflessthan1sperfull -`'* frame;and h     a.5.b.Areadouttimeallowingaframingrateofmorethan125fullframespersecond.b.Imagingcameras,asfollows:  Note :6A003.bdoesnotcontroltelevisionorvideocamerasspeciallydesignedfor   televisionbroadcasting.  b.1.Videocamerasincorporatingsolidstatesensors,havinganyofthefollowing:    b.1.a.Morethan4x106"activepixels"persolidstatearrayformonochrome(black  andwhite)cameras;    b.1.b.Morethan4x106"activepixels"persolidstatearrayforcolorcameras "  incorporatingthreesolidstatearrays;or h$      b.1.c.Morethan12x106"activepixels"forsolidstatearraycolorcameras ((!$ incorporatingonesolidstatearray;  b.2.Scanningcamerasandscanningcamerasystems,havingallofthefollowing: -`'* Ї    b.2.a.Lineardetectorarrayswithmorethan8,192elementsperarray;and h     b.2.b.Mechanicalscanninginonedirection;  b.3.Imagingcamerasincorporatingimageintensifiertubeshavingthecharacteristicslistedin6A002.a.2.a;  b.4.Imagingcamerasincorporating"focalplanearrays"havingthecharacteristicslistedin6A002.a.3.  Note:6A003.b.4doesnotcontrolimagingcamerasincorporatinglinear"focalplanearrays"withtwelveelementsorfewer,notemployingtimedelayandintegrationwiththeelement,designedforanyofthefollowing:    a.Industrialorcivilianintrusionalarm,trafficorindustrialmovementcontrolorcountingsystems;    b.Industrialequipmentusedforinspectionormonitoringofheatflowsinbuildings,equipmentorindustrialprocesses;    c.Industrialequipmentusedforinspection,sortingoranalysisofthepropertiesofmaterials; -`'* Ї    d.Equipmentspeciallydesignedforlaboratoryuse;or h     e.Medicalequipment. 6A005"Lasers",componentsandopticalequipment,asfollows(seeListofItems `  Controlled).  @  @$***** ListofItemsControlled  (   Unit:Equipmentinnumber;partsandaccessoriesin$value  0  RelatedControls:1.)Seealso6A205,6A995,0B001.g.5and0B001.b.6.2.)For ` excimer"lasers"speciallydesignedforlithographyequipment,see3B001.3.)Sharedapertureopticalelements,capableofoperatingin"superhighpowerlaser"applicationsaresubjecttotheexportlicensingauthorityoftheU.S.DepartmentofState,OfficeofDefenseTradeControls.(See22CFRpart121.) (#(# 0  RelatedDefinitions:1.)Pulsed"lasers"includethosethatruninacontinuouswave ((!$ (CW)modewithpulsessuperimposed.2.)Pulse-excited"lasers"includethosethatruninacontinuouslyexcitedmodewithpulseexcitationsuperimposed.3.)ThecontrolstatusofRaman"lasers"isdeterminedbytheparametersofthepumpingsource"lasers". -`'* Thepumpingsource"lasers"canbeanyofthe"lasers"describedasfollows: (#(#   Items: H a.Gas"lasers",asfollows:  a.1.Excimer"lasers",havinganyofthefollowing:    a.1.a.Anoutputwavelengthnotexceeding150nmandhavinganyofthefollowing:     a.1.a.1.Anoutputenergyexceeding50mJperpulse;or (      a.1.a.2.AnaverageorCWoutputpowerexceeding1W;    a.1.b.Anoutputwavelengthexceeding150nmbutnotexceeding190nmandhavinganyofthefollowing:     a.1.b.1.Anoutputenergyexceeding1.5Jperpulse;or H&"      a.1.b.2.AnaverageorCWoutputpowerexceeding120W;    a.1.c.Anoutputwavelengthexceeding190nmbutnotexceeding360nmand -`'* havinganyofthefollowing:     a.1.c.1.Anoutputenergyexceeding10Jperpulse;or (       a.1.c.2.AnaverageorCWoutputpowerexceeding500W;or       a.1.d.Anoutputwavelengthexceeding360nmandhavinganyofthefollowing:     a.1.d.1.Anoutputenergyexceeding1.5Jperpulse;or h      a.1.d.2.AnaverageorCWoutputpowerexceeding30W;  a.2.Metalvapor"lasers",asfollows:    a.2.a.Copper(Cu)"lasers"havinganaverageorCWoutputpowerexceeding20W;    a.2.b.Gold(Au)"lasers"havinganaverageorCWoutputpowerexceeding5W;    a.2.c.Sodium(Na)"lasers"havinganoutputpowerexceeding5W;    a.2.d.Barium(Ba)"lasers"havinganaverageorCWoutputpowerexceeding2W; -`'* Ї  a.3.Carbonmonoxide(CO)"lasers"havinganyofthefollowing:    a.3.a.Anoutputenergyexceeding2Jperpulseandapulsed"peakpower"exceeding5Kw;or       a.3.b.AnaverageorCWoutputpowerexceeding5Kw;  a.4.Carbondioxide(CO2)"lasers"havinganyofthefollowing:       a.4.a.ACWoutputpowerexceeding15Kw;    a.4.b.Apulsedoutputhavinga"pulseduration"exceeding10sandhavinganyofthefollowing:     a.4.b.1.Anaverageoutputpowerexceeding10Kw;or  @      a.4.b.2.Apulsed"peakpower"exceeding100Kw;or h$      a.4.c.Apulsedoutputhavinga"pulseduration"equaltoorlessthan10s;andhavinganyofthefollowing:     a.4.c.1.Apulseenergyexceeding5Jperpulse;or -`'* Ї     a.4.c.2.Anaverageoutputpowerexceeding2.5Kw;  a.5."Chemicallasers",asfollows:    a.5.a.HydrogenFluoride(HF)"lasers";    a.5.b.DeuteriumFluoride(DF)"lasers";    a.5.c."Transferlasers",asfollows:     a.5.c.1.OxygenIodine(O2-I)"lasers";       a.5.c.2.DeuteriumFluoride-Carbondioxide(DF-CO2)"lasers"; `   a.6.Kryptonionorargonion"lasers"havinganyofthefollowing:    a.6.a.Anoutputenergyexceeding1.5Jperpulseandapulsed"peakpower"exceeding50W;or ((!$     a.6.b.AnaverageorCWoutputpowerexceeding50W; -`'*   a.7.Othergas"lasers",havinganyofthefollowing:  Note :6A005.a.7doesnotcontrolnitrogen"lasers". (      a.7.a.Anoutputwavelengthnotexceeding150nmandhavinganyofthefollowing:     a.7.a.1.Anoutputenergyexceeding50mJperpulseandapulsed"peakpower"exceeding1W;or h      a.7.a.2.AnaverageorCWoutputpowerexceeding1W;    a.7.b.Anoutputwavelengthexceeding150nmbutnotexceeding800nmandhavinganyofthefollowing:     a.7.b.1.Anoutputenergyexceeding1.5Jperpulseandapulsed"peakpower"exceeding30W;or h$       a.7.b.2.AnaverageorCWoutputpowerexceeding30W;    a.7.c.Anoutputwavelengthexceeding800nmbutnotexceeding1,400nmandhavinganyofthefollowing: -`'* Ї     a.7.c.1.Anoutputenergyexceeding0.25Jperpulseandapulsed"peakpower"exceeding10W;or H      a.7.c.2.AnaverageorCWoutputpowerexceeding10W;or       a.7.d.Anoutputwavelengthexceeding1,400nmandanaverageorCWoutputpowerexceeding1W.b.Semiconductor"lasers",havingawavelengthoflessthan950nmormorethan2000nm,asfollows:  b.1.Individualsingletransversemodesemiconductor"lasers"havinganaverageorCWoutputpowerexceeding100mW;  b.2.Individual,multiple-transversemodesemiconductor"lasers"andarraysofindividualsemiconductor"lasers",havinganyofthefollowing:    b.2.a.Anoutputenergyexceeding500Jperpulseandapulsed"peakpower"exceeding10W;or ((!$     b.2.b.AnaverageorCWoutputpowerexceeding10W. -`'*   TechnicalNote :Semiconductor"lasers"arecommonlycalled"laser"diodes. h   Note1 :6A005.bincludessemiconductor"lasers"havingopticaloutputconnectors(e.g. (  fiberopticpigtails).  Note2 :Thecontrolstatusofsemiconductor"lasers"speciallydesignedforother `  equipmentisdeterminedbythecontrolstatusoftheotherequipment.c.Solidstate"lasers",asfollows:  c.1."Tunable""lasers"havinganyofthefollowing:̀  Note :6A005.c.1includestitanium-sapphire(Ti:Al2O3),thulium-YAG(Tm:YAG),  thulium-YSGG(Tm:YSGG),alexandrite(Cr:BeAl2O4)andcolorcenter"lasers". `     c.1.a.Anoutputwavelengthlessthan600nmandhavinganyofthefollowing:     c.1.a.1.Anoutputenergyexceeding50mJperpulseandapulsed"peakpower"exceeding1W;or ((!$      c.1.a.2.AnaverageorCWoutputpowerexceeding1W; -`'*     c.1.b.Anoutputwavelengthof600nmormorebutnotexceeding1,400nmandhavinganyofthefollowing:     c.1.b.1.Anoutputenergyexceeding1Jperpulseandapulsed"peakpower"exceeding20W;or        c.1.b.2.AnaverageorCWoutputpowerexceeding20W;or @      c.1.c.Anoutputwavelengthexceeding1,400nmandhavinganyofthefollowing:     c.1.c.1.Anoutputenergyexceeding50mJperpulseandapulsed"peakpower"exceeding1W;or       c.1.c.2.AnaverageorCWoutputpowerexceeding1W;  c.2.Non-"tunable""lasers",asfollows:  Note :6A005.c.2includesatomictransitionsolidstate"lasers". H&"     c.2.a.Neodymiumglass"lasers",asfollows:     c.2.a.1."Q-switchedlasers"havinganyofthefollowing: -`'* Ї       c.2.a.1.a.Anoutputenergyexceeding20Jbutnotexceeding50Jperpulseandanaverageoutputpowerexceeding10W;or H        c.2.a.1.b.Anoutputenergyexceeding50Jperpulse;     c.2.a.2.Non-"Q-switchedlasers"havinganyofthefollowing:       c.2.a.2.a.Anoutputenergyexceeding50Jbutnotexceeding100Jperpulseandanaverageoutputpowerexceeding20W;or h        c.2.a.2.b.Anoutputenergyexceeding100Jperpulse;    c.2.b.Neodymium-doped(otherthanglass)"lasers",havinganoutputwavelengthexceeding1,000nmbutnotexceeding1,100nm,asfollows:  N.B. :Forneodymium-doped(otherthanglass)"lasers"havinganoutputwavelengthnot "  exceeding1,000nmorexceeding1,100nm,see6A005.c.2.c.     c.2.b.1.Pulse-excited,mode-locked,"Q-switchedlasers"havinga"pulseduration"oflessthan1nsandhavinganyofthefollowing:       c.2.b.1.a.A"peakpower"exceeding5GW; -`'* Ї       c.2.b.1.b.Anaverageoutputpowerexceeding10W;or h        c.2.b.1.c.Apulsedenergyexceeding0.1J;     c.2.b.2.Pulse-excited,"Q-switchedlasers"havingapulsedurationequaltoormorethan1ns,andhavinganyofthefollowing:       c.2.b.2.a.Asingle-transversemodeoutputhaving:        h c.2.b.2.a.1.A"peakpower"exceeding100MW;        h c.2.b.2.a.2.Anaverageoutputpowerexceeding20W;or          h c.2.b.2.a.3.Apulsedenergyexceeding2J;or `        c.2.b.2.b.Amultiple-transversemodeoutputhaving:        h c.2.b.2.b.1.A"peakpower"exceeding400MW;        h c.2.b.2.b.2.Anaverageoutputpowerexceeding2kW;or *#&         h c.2.b.2.b.3.Apulsedenergyexceeding2J; -`'* Ї     c.2.b.3.Pulse-excited,non-"Q-switchedlasers",having:       c.2.b.3.a.Asingle-transversemodeoutputhaving:        h c.2.b.3.a.1.A"peakpower"exceeding500kW;or           h c.2.b.3.a.2.Anaverageoutputpowerexceeding150W;or @         c.2.b.3.b.Amultiple-transversemodeoutputhaving:        h c.2.b.3.b.1.A"peakpower"exceeding1MW;or (         h c.2.b.3.b.2.Anaveragepowerexceeding2kW;     c.2.b.4.Continuouslyexcited"lasers"having:       c.2.b.4.a.Asingle-transversemodeoutputhaving:        h c.2.b.4.a.1.A"peakpower"exceeding500kW;or ((!$         h c.2.b.4.a.2.AnaverageorCWoutputpowerexceeding150W;or -`'* Ї       c.2.b.4.b.Amultiple-transversemodeoutputhaving:        h c.2.b.4.b.1.A"peakpower"exceeding1MW;or (          h c.2.b.4.b.2.AnaverageorCWoutputpowerexceeding2kW;    c.2.c.Othernon-"tunable""lasers",havinganyofthefollowing:     c.2.c.1.Awavelengthlessthan150nmandhavinganyofthefollowing:       c.2.c.1.a.Anoutputenergyexceeding50mJperpulseandapulsed"peakpower"exceeding1W;or         c.2.c.1.b.AnaverageorCWoutputpowerexceeding1W;     c.2.c.2.Awavelengthof150nmormorebutnotexceeding800nmandhavinganyofthefollowing:       c.2.c.2.a.Anoutputenergyexceeding1.5Jperpulseandapulsed"peakpower"exceeding30W;or +%(  -`'*        c.2.c.2.b.AnaverageorCWoutputpowerexceeding30W;     c.2.c.3.Awavelengthexceeding800nmbutnotexceeding1,400nm,asfollows:       c.2.c.3.a."Q-switchedlasers"having:        h c.2.c.3.a.1.Anoutputenergyexceeding0.5Jperpulseandapulsed"peakpower"exceeding50W;or h         h c.2.c.3.a.2.Anaverageoutputpowerexceeding:        h   c.2.c.3.a.2.a.10Wforsingle-mode"lasers";        h   c.2.c.3.a.2.b.30Wformultimode"lasers";       c.2.c.3.b.Non-"Q-switchedlasers"having:        h c.2.c.3.b.1.Anoutputenergyexceeding2Jperpulseandapulsed"peakpower"exceeding50W;or *#&         h c.2.c.3.b.2.AnaverageorCWoutputpowerexceeding50 -`'* W;or h      c.2.c.4.Awavelengthexceeding1,400nmandhavinganyofthe (  following:       c.2.c.4.a.Anoutputenergyexceeding100mJperpulseandapulsed"peakpower"exceeding1W;or @         c.2.c.4.b.AnaverageorCWoutputpowerexceeding1W;d.Dyeandotherliquid"lasers",havinganyofthefollowing:  d.1.Awavelengthlessthan150nmand:    d.1.a.Anoutputenergyexceeding50mJperpulseandapulsed"peakpower"exceeding1W;or "      d.1.b.AnaverageorCWoutputpowerexceeding1W;  d.2.Awavelengthof150nmormorebutnotexceeding800nmandhavinganyofthefollowing: -`'*     d.2.a.Anoutputenergyexceeding1.5Jperpulseandapulsed"peakpower"exceeding20W;    d.2.b.AnaverageorCWoutputpowerexceeding20W;or       d.2.c.Apulsedsinglelongitudinalmodeoscillatorhavinganaverageoutputpowerexceeding1Wandarepetitionrateexceeding1Khzifthe"pulseduration"islessthan100ns;  d.3.Awavelengthexceeding800nmbutnotexceeding1,400nmandhavinganyofthefollowing:    d.3.a.Anoutputenergyexceeding0.5Jperpulseandapulsed"peakpower"exceeding10W;or      d.3.b.AnaverageorCWoutputpowerexceeding10W;or  @   d.4.Awavelengthexceeding1,400nmandhavinganyofthefollowing:    d.4.a.Anoutputenergyexceeding100mJperpulseandapulsed"peakpower"exceeding1W;or *#&     d.4.b.AnaverageorCWoutputpowerexceeding1W; -`'* Їe.Components,asfollows:  e.1.Mirrorscooledeitherbyactivecoolingorbyheatpipecooling;  TechnicalNote :Activecoolingisacoolingtechniqueforopticalcomponentsusing   flowingfluidswithinthesubsurface(nominallylessthan1mmbelowtheopticalsurface)oftheopticalcomponenttoremoveheatfromtheoptic.  e.2.Opticalmirrorsortransmissiveorpartiallytransmissiveopticalorelectro-opticalcomponentsspeciallydesignedforusewithcontrolled"lasers";f.Opticalequipment,asfollows:(Forsharedapertureopticalelements,capableofoperatingin"Super-HighPowerLaser"("SHPL")applications,seetheU.S.MunitionsList.)  f.1.Dynamicwavefront(phase)measuringequipmentcapableofmappingatleast50positionsonabeamwavefronthavinganythefollowing:    f.1.a.Frameratesequaltoormorethan100Hzandphasediscriminationofatleast5%ofthebeam'swavelength;or +%(  -`'*     f.1.b.Frameratesequaltoormorethan1,000Hzandphasediscriminationofatleast20%ofthebeam'swavelength;  f.2."Laser"diagnosticequipmentcapableofmeasuring"SHPL"systemangularbeamsteeringerrorsofequaltoorlessthan10rad;  f.3.Opticalequipmentandcomponentsspeciallydesignedforaphased-array"SHPL"systemforcoherentbeamcombinationtoanaccuracyoflambda/10atthedesignedwavelength,or0.1m,whicheveristhesmaller;  f.4.Projectiontelescopesspeciallydesignedforusewith"SHPL"systems. 6C002Opticalsensormaterials,asfollows(seeListofItemsControlled).  ` @$***** ListofItemsControlled  H&"   Unit:Number *#&   RelatedControls:Seealso6C992 +%(   RelatedDefinitions:N/A -`'*   Items: h a.Elementaltellurium(Te)ofpuritylevelsof99.9995%ormore;b.Singlecrystalsofcadmiumzinctelluride(CdZnTe),withzinccontentlessthan6%byweight,orcadmiumtelluride(CdTe),ormercurycadmiumtelluride(HgCdTe)ofanypuritylevel,includingepitaxialwafersthereof. 6C992Opticalsensingfibersnotcontrolledby6A002.d.3whicharemodifiedstructurally ( tohavea"beatlength"oflessthan500mm(highbirefringence)oropticalsensormaterialsnotdescribedin6C002.bandhavingazinccontentofequaltoormorethan6%byweight.   @$*****  15.InSupplementNo.1topart774(theCommerceControlList),Category7NavigationandAvionicsisamendedbyrevisingthenotesthatimmediatelyfollowtheCategory7A(Systems,EquipmentandComponents)heading,toreadasfollows: -`'*  Category7NavigationandAvionics h A.SYSTEMS,EQUIPMENTANDCOMPONENTS  (    N.B.1:Forautomaticpilotsforunderwatervehicles,seeCategory8.Forradar,see   Category6.  N.B.2:Forinertialnavigationequipmentforshipsorsubmersiblesseeitem9.eonthe   WassenaarMunitionsList.  H   16.InSupplementNo.1topart774(theCommerceControlList),Category9PropulsionSystems,SpaceVehiclesandRelatedEquipmentisamendedbyrevisingtheparentheticalphrasethatimmediatelyfollowsCategory9A(Systems,EquipmentandComponents)headingtoreadasfollows: Category9PropulsionSystems,SpaceVehiclesandRelatedEquipment   A.SYSTEMS,EQUIPMENTANDCOMPONENTS  H   N.B.:Forpropulsionsystemsdesignedorratedagainstneutronortransientionizing,see  theU.S.MunitionsList,22CFRpart121.̛DATED:R.RogerMajakAssistantSecretaryforExportAdministration -`'*